Следене
Víctor Jesús Gómez Hernández
Víctor Jesús Gómez Hernández
Nanophotonics Technology Center - Universitat Politècnica de València
Потвърден имейл адрес: ntc.upv.es
Заглавие
Позовавания
Позовавания
Година
InN/InGaN quantum dot photoelectrode: efficient hydrogen generation by water splitting at zero voltage
PEDS Rodriguez, P Aseev, VJ Gómez, W ul Hassan, M Willander, ...
Nano Energy 13, 291-297, 2015
632015
A comprehensive diagram to grow (0001) InGaN alloys by molecular beam epitaxy
Ž Gačević, VJ Gómez, NG Lepetit, PEDS Rodríguez, A Bengoechea, ...
Journal of crystal growth 364, 123-127, 2013
532013
Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range
P Aseev, PED Rodriguez, VJ Gómez, JM Mánuel, FM Morales, ...
Applied Physics Letters 106 (7), 2015
502015
Highly efficient potentiometric glucose biosensor based on functionalized InN quantum dots
NH Alvi, PED Soto Rodriguez, VJ Gómez, P Kumar, G Amin, O Nur, ...
Applied Physics Letters 101 (15), 2012
412012
An InN/InGaN quantum dot electrochemical biosensor for clinical diagnosis
N Ul Hassan Alvi, VJ Gómez, PED Soto Rodriguez, P Kumar, S Zaman, ...
Sensors 13 (10), 13917-13927, 2013
352013
Near-infrared InN quantum dots on high-In composition InGaN
PED Soto Rodriguez, VJ Gómez, P Kumar, E Calleja, R Nötzel
Applied Physics Letters 102 (13), 2013
342013
Photoelectrochemical water splitting and hydrogen generation by a spontaneously formed InGaN nanowall network
NH Alvi, PED Soto Rodriguez, P Kumar, VJ Gómez, P Aseev, AH Alvi, ...
Applied Physics Letters 104 (22), 2014
322014
First demonstration of direct growth of planar high-in-composition InGaN layers on Si
P Kumar, PEDS Rodriguez, VJ Gómez, NH Alvi, E Calleja, R Nötzel
Applied Physics Express 6 (3), 035501, 2013
262013
Uniform low-to-high in composition InGaN layers grown on Si
P Aseev, PEDS Rodriguez, P Kumar, VJ Gómez, JM Mánuel, FM Morales, ...
Applied Physics Express 6 (11), 115503, 2013
222013
Highly sensitive and fast anion-selective InN quantum dot electrochemical sensors
PEDS Rodriguez, VJ Gómez, P Kumar, M Willander, R Nötzel
Applied Physics Express 6 (11), 115201, 2013
222013
Stranski-Krastanov InN/InGaN quantum dots grown directly on Si (111)
PED Soto Rodriguez, P Aseev, VJ Gómez, P Kumar, N Ul Hassan Alvi, ...
Applied Physics Letters 106 (2), 2015
172015
Wafer-scale nanofabrication of sub-100 nm arrays by deep-UV displacement Talbot lithography
VJ Gómez, M Graczyk, RJ Jam, S Lehmann, I Maximov
Nanotechnology 31 (29), 295301, 2020
132020
Spontaneous formation of InGaN nanowall network directly on Si
PED Soto Rodriguez, P Kumar, VJ Gómez, NH Alvi, JM Manuel, ...
Applied Physics Letters 102 (17), 2013
132013
Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si (111)
PEDS Rodriguez, VC Nash, P Aseev, VJ Gómez, P Kumar, NUH Alvi, ...
Electrochemistry Communications 60, 158-162, 2015
112015
Comparative study of single InGaN layers grown on Si (111) and GaN (0001) templates: The role of surface wetting and epitaxial constraint
VJ Gómez, Ž Gačević, PED Soto-Rodríguez, P Aseev, R Nötzel, E Calleja, ...
Journal of Crystal Growth 447, 48-54, 2016
92016
Template-assisted vapour–liquid–solid growth of InP nanowires on (001) InP and Si substrates
RJ Jam, AR Persson, E Barrigón, M Heurlin, I Geijselaers, VJ Gómez, ...
Nanoscale 12 (2), 888-894, 2020
82020
Porosity control for plasma-assisted molecular beam epitaxy of GaN nanowires
VJ Gómez, AJ Santos, E Blanco, B Lacroix, R Garcia, DL Huffaker, ...
Crystal Growth & Design 19 (4), 2461-2469, 2019
72019
Simultaneous optical and electrical characterization of GaN nanowire arrays by means of vis-IR spectroscopic ellipsometry
AJ Santos, B Lacroix, E Blanco, S Hurand, VJ Gómez, F Paumier, ...
The Journal of Physical Chemistry C 124 (2), 1535-1543, 2019
62019
Application of advanced (S) TEM methods for the study of nanostructured porous functional surfaces: A few working examples
AJ Santos, B Lacroix, F Maudet, F Paumier, S Hurand, C Dupeyrat, ...
Materials Characterization 185, 111741, 2022
42022
High In Composition InGaN for InN Quantum Dot Intermediate Band Solar Cells
VJ Gomez, PEDS Rodriguez, P Kumar, E Calleja, R Nötzel
Japanese Journal of Applied Physics 52 (8S), 08JH09, 2013
42013
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