Johannes K Zettler
Johannes K Zettler
LayTec AG
Потвърден имейл адрес: laytec.de
Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of gan nanowire ensembles
S Fernández-Garrido, JK Zettler, L Geelhaar, O Brandt
Nano letters 15 (3), 1930-1937, 2015
Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency
P Corfdir, C Hauswald, JK Zettler, T Flissikowski, J Lähnemann, ...
Physical Review B 90 (19), 195309, 2014
Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires
O Brandt, S Fernández-Garrido, JK Zettler, E Luna, U Jahn, C Chèze, ...
Crystal Growth & Design 14 (5), 2246-2253, 2014
Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature
JK Zettler, P Corfdir, C Hauswald, E Luna, U Jahn, T Flissikowski, ...
Nano letters 16 (2), 973-980, 2016
Origin of the nonradiative decay of bound excitons in GaN nanowires
C Hauswald, P Corfdir, JK Zettler, VM Kaganer, KK Sabelfeld, ...
Physical Review B 90 (16), 165304, 2014
High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN
JK Zettler, C Hauswald, P Corfdir, M Musolino, L Geelhaar, H Riechert, ...
Crystal Growth & Design 15 (8), 4104-4109, 2015
Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field ionization of donors
P Corfdir, JK Zettler, C Hauswald, S Fernández-Garrido, O Brandt, ...
Physical Review B 90 (20), 205301, 2014
Importance of the dielectric contrast for the polarization of excitonic transitions in single GaN nanowires
P Corfdir, F Feix, JK Zettler, S Fernández-Garrido, O Brandt
New Journal of Physics 17 (3), 033040, 2015
Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process
JK Zettler, P Corfdir, L Geelhaar, H Riechert, O Brandt, ...
Nanotechnology 26 (44), 445604, 2015
Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si (111)
C Pfüller, P Corfdir, C Hauswald, T Flissikowski, X Kong, JK Zettler, ...
Physical Review B 94 (15), 155308, 2016
Graded Absorption Layers in Bulk Heterojunction Organic Solar Cells
B Beyer, R Pfeifer, JK Zettler, OR Hild, K Leo
The Journal of Physical Chemistry C 117 (19), 9537-9542, 2013
Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al, Ga) N nanowires grown by molecular beam epitaxy
C Sinito, P Corfdir, C Pfüller, G Gao, J Bartolomé, S Kölling, ...
Nano letters 19 (9), 5938-5948, 2019
Crystal-phase quantum dots in GaN quantum wires
P Corfdir, C Hauswald, O Marquardt, T Flissikowski, JK Zettler, ...
Physical Review B 93 (11), 115305, 2016
Crystal-Phase Quantum Wires: One-Dimensional Heterostructures with Atomically Flat Interfaces
P Corfdir, H Li, O Marquardt, G Gao, MR Molas, JK Zettler, D Van Treeck, ...
Nano letters 18 (1), 247-254, 2018
Correction to Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al, Ga) N Nanowires Grown by Molecular Beam Epitaxy
C Sinito, P Corfdir, C Pfüller, G Gao, J Bartolomé, S Kölling, ...
Nano Letters 20 (9), 6930-6930, 2020
Growth of GaN nanowire ensembles in molecular beam epitaxy: Overcoming the limitations of their spontaneous formation
JK Zettler
Berlin: Humboldt-Universität zu Berlin, 2018
Gradient ZnPc: C60 absorption layers in small molecule solar cells
B Beyer, J Zettler, S Richter, M Toerker, OR Hild, K Leo
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