| Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of gan nanowire ensembles S Fernández-Garrido, JK Zettler, L Geelhaar, O Brandt Nano letters 15 (3), 1930-1937, 2015 | 63 | 2015 |
| Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency P Corfdir, C Hauswald, JK Zettler, T Flissikowski, J Lähnemann, ... Physical Review B 90 (19), 195309, 2014 | 58 | 2014 |
| Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires O Brandt, S Fernández-Garrido, JK Zettler, E Luna, U Jahn, C Chèze, ... Crystal Growth & Design 14 (5), 2246-2253, 2014 | 55 | 2014 |
| Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature JK Zettler, P Corfdir, C Hauswald, E Luna, U Jahn, T Flissikowski, ... Nano letters 16 (2), 973-980, 2016 | 50 | 2016 |
| Origin of the nonradiative decay of bound excitons in GaN nanowires C Hauswald, P Corfdir, JK Zettler, VM Kaganer, KK Sabelfeld, ... Physical Review B 90 (16), 165304, 2014 | 44 | 2014 |
| High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN JK Zettler, C Hauswald, P Corfdir, M Musolino, L Geelhaar, H Riechert, ... Crystal Growth & Design 15 (8), 4104-4109, 2015 | 39 | 2015 |
| Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field ionization of donors P Corfdir, JK Zettler, C Hauswald, S Fernández-Garrido, O Brandt, ... Physical Review B 90 (20), 205301, 2014 | 34 | 2014 |
| Importance of the dielectric contrast for the polarization of excitonic transitions in single GaN nanowires P Corfdir, F Feix, JK Zettler, S Fernández-Garrido, O Brandt New Journal of Physics 17 (3), 033040, 2015 | 23 | 2015 |
| Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process JK Zettler, P Corfdir, L Geelhaar, H Riechert, O Brandt, ... Nanotechnology 26 (44), 445604, 2015 | 18 | 2015 |
| Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si (111) C Pfüller, P Corfdir, C Hauswald, T Flissikowski, X Kong, JK Zettler, ... Physical Review B 94 (15), 155308, 2016 | 16 | 2016 |
| Graded Absorption Layers in Bulk Heterojunction Organic Solar Cells B Beyer, R Pfeifer, JK Zettler, OR Hild, K Leo The Journal of Physical Chemistry C 117 (19), 9537-9542, 2013 | 11 | 2013 |
| Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al, Ga) N nanowires grown by molecular beam epitaxy C Sinito, P Corfdir, C Pfüller, G Gao, J Bartolomé, S Kölling, ... Nano letters 19 (9), 5938-5948, 2019 | 8 | 2019 |
| Crystal-Phase Quantum Wires: One-Dimensional Heterostructures with Atomically Flat Interfaces P Corfdir, H Li, O Marquardt, G Gao, MR Molas, JK Zettler, D Van Treeck, ... Nano letters 18 (1), 247-254, 2018 | 8 | 2018 |
| Crystal-phase quantum dots in GaN quantum wires P Corfdir, C Hauswald, O Marquardt, T Flissikowski, JK Zettler, ... Physical Review B 93 (11), 115305, 2016 | 8 | 2016 |
| Correction to Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al, Ga) N Nanowires Grown by Molecular Beam Epitaxy C Sinito, P Corfdir, C Pfüller, G Gao, J Bartolomé, S Kölling, ... Nano Letters 20 (9), 6930-6930, 2020 | | 2020 |
| Growth of GaN nanowire ensembles in molecular beam epitaxy: Overcoming the limitations of their spontaneous formation JK Zettler Berlin: Humboldt-Universität zu Berlin, 2018 | | 2018 |
| Gradient ZnPc: C60 absorption layers in small molecule solar cells B Beyer, J Zettler, S Richter, M Toerker, OR Hild, K Leo | | 2010 |
