| Selectivity in thermal atomic layer etching using sequential, self-limiting fluorination and ligand-exchange reactions Y Lee, C Huffman, SM George Chemistry of Materials 28 (21), 7657-7665, 2016 | 114 | 2016 |
| Controlled Layer-by-Layer Etching of MoS2 TZ Lin, BT Kang, MH Jeon, C Huffman, JH Jeon, SJ Lee, W Han, JY Lee, ... ACS applied materials & interfaces 7 (29), 15892-15897, 2015 | 95 | 2015 |
| Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE) BH Lee, CD Young, R Choi, JH Sim, G Bersuker, CY Kang, R Harris, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 84 | 2004 |
| Impact of strained-silicon-on-insulator (sSOI) substrate on FinFET mobility W Xiong, CR Cleavelin, P Kohli, C Huffman, T Schulz, K Schruefer, ... IEEE Electron Device Letters 27 (7), 612-614, 2006 | 82 | 2006 |
| Growth mechanism of TiN film on dielectric films and the effects on the work function K Choi, P Lysaght, H Alshareef, C Huffman, HC Wen, R Harris, H Luan, ... Thin Solid Films 486 (1-2), 141-144, 2005 | 64 | 2005 |
| Thermally stable N-metal gate MOSFETs using La-incorporated HfSiO dielectric H Alshareef, H Harris, H Wen, C Park, C Huffman, K Choi, H Luan, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 7-8, 2006 | 59 | 2006 |
| Highly manufacturable 45nm LSTP CMOSFETs using novel dual high-k and dual metal gate CMOS integration S Song, Z Zhang, M Hussain, C Huffman, J Barnett, S Bae, H Li, P Majhi, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 13-14, 2006 | 54 | 2006 |
| Lateral high-speed bipolar transistors on SOI for RF SoC applications ISM Sun, WT Ng, K Kanekiyo, T Kobayashi, H Mochizuki, M Toita, H Imai, ... IEEE transactions on Electron Devices 52 (7), 1376-1383, 2005 | 52 | 2005 |
| Integration of dual metal gate CMOS on high-k dielectrics utilizing a metal wet etch process Z Zhang, SC Song, C Huffman, MM Hussain, J Barnett, N Moumen, ... Electrochemical and Solid-State Letters 8 (10), G271, 2005 | 49 | 2005 |
| High performance gate first HfSiON dielectric satisfying 45nm node requirements MA Quevedo-Lopez, SA Krishnan, D Kirsch, CHJ Li, JH Sim, C Huffman, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 4 …, 2005 | 48 | 2005 |
| Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications TW Kim, DH Kim, DH Koh, HM Kwon, RH Baek, D Veksler, C Huffman, ... 2013 IEEE International Electron Devices Meeting, 16.3. 1-16.3. 4, 2013 | 43 | 2013 |
| Highly manufacturable advanced gate-stack technology for sub-45-nm self-aligned gate-first CMOSFETs SC Song, Z Zhang, C Huffman, JH Sim, SH Bae, PD Kirsch, P Majhi, ... IEEE transactions on electron devices 53 (5), 979-989, 2006 | 36 | 2006 |
| Thermal response of Ru electrodes in contact with SiO2 and Hf-based high-k gate dielectrics HC Wen, P Lysaght, HN Alshareef, C Huffman, HR Harris, K Choi, ... Journal of Applied Physics 98 (4), 2005 | 36 | 2005 |
| Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO/sub 2/gate dielectric ZB Zhang, SC Song, C Huffman, J Barnett, N Moumen, H Alshareef, ... Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 50-51, 2005 | 35 | 2005 |
| Demonstration of scaled 0.099µm2 FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology A Veloso, S Demuynck, M Ercken, AM Goethals, S Locorotondo, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 34 | 2009 |
| Formation of fully silicided gate with oxide barrier on the source/drain silicide regions P Kohli, C Huffman, M Ramin US Patent 7,737,015, 2010 | 27 | 2010 |
| IEEE Electron Dev W Xiong, CR Cleavelin, P Kohli, C Huffman, T Schulz, K Schruefer, ... Lett 27 (7), 612-4, 2006 | 22 | 2006 |
| Experimental study of etched back thermal oxide for optimization of the Si/high-k interface J Barnett, N Moumen, J Gutt, M Gardner, C Huffman, P Majhi, JJ Peterson, ... MRS Online Proceedings Library (OPL) 811, E1. 4, 2004 | 22 | 2004 |
| Advanced organic polymer for the aggressive scaling of low-k materials M Pantouvaki, C Huffman, L Zhao, N Heylen, Y Ono, M Nakajima, ... Japanese Journal of Applied Physics 50 (4S), 04DB01, 2011 | 21 | 2011 |
| Etch back of interconnect dielectrics DG Farber, T Tsui, R Kraft, C Huffman US Patent 6,780,756, 2004 | 20 | 2004 |
