Следене
Hans Jurgen von Bardeleben
Hans Jurgen von Bardeleben
Directeur de Recherche CNRS
Потвърден имейл адрес: sorbonne-universite.fr
Заглавие
Позовавания
Позовавания
Година
Native defects in gallium arsenide
JC Bourgoin, HJ Von Bardeleben, D Stievenard
Journal of applied physics 64 (9), R65-R92, 1988
4661988
Radiation hardness of gallium nitride
A Ionascut-Nedelcescu, C Carlone, A Houdayer, HJ Von Bardeleben, ...
IEEE Transactions on Nuclear Science 49 (6), 2733-2738, 2002
4082002
Identification of a defect in a semiconductor: EL2 in GaAs
HJ Von Bardeleben, D Stievenard, D Deresmes, A Huber, JC Bourgoin
Physical Review B 34 (10), 7192, 1986
2981986
Electron paramagnetic resonance study of A predicted high-temperature ferromagnetic semiconductor
N Jedrecy, HJ Von Bardeleben, Y Zheng, JL Cantin
Physical Review B 69 (4), 041308, 2004
1682004
Behavior of electron-irradiation-induced defects in GaAs
D Stievenard, X Boddaert, JC Bourgoin, HJ Von Bardeleben
Physical Review B 41 (8), 5271, 1990
1561990
Surface-acoustic-wave-driven ferromagnetic resonance in (Ga, Mn)(As, P) epilayers
L Thevenard, C Gourdon, JY Prieur, HJ Von Bardeleben, S Vincent, ...
Physical Review B 90 (9), 094401, 2014
1482014
Identification of EL2 in GaAs
HJ Von Bardeleben, D Stievenard, JC Bourgoin, A Huber
Applied physics letters 47 (9), 970-972, 1985
1461985
Bright room temperature single photon source at telecom range in cubic silicon carbide
J Wang, Y Zhou, Z Wang, A Rasmita, J Yang, X Li, HJ von Bardeleben, ...
Nature communications 9 (1), 4106, 2018
1362018
Hydrogenated amorphous carbon film coating of PET bottles for gas diffusion barriers
N Boutroy, Y Pernel, JM Rius, F Auger, HJ Von Bardeleben, JL Cantin, ...
Diamond and Related Materials 15 (4-8), 921-927, 2006
1302006
Identification of the Carbon Dangling Bond Center at the Interface by an EPR Study in Oxidized Porous SiC
JL Cantin, HJ Von Bardeleben, Y Shishkin, Y Ke, RP Devaty, WJ Choyke
Physical review letters 92 (1), 015502, 2004
1302004
ESR and optical spectroscopy evidence for a chain-length dependence of the charged states of thiophene oligomers. Extrapolation to polythiophene
G Horowitz, A Yassar, HJ Von Bardeleben
Synthetic metals 62 (3), 245-252, 1994
1201994
Synthesis and luminescence properties of vanadium-doped nanosized zinc oxide aerogel
L El Mir, J El Ghoul, S Alaya, MB Salem, C Barthou, HJ Von Bardeleben
Physica B: Condensed Matter 403 (10-11), 1770-1774, 2008
1112008
Proton-implantation-induced defects in n-type - and An electron paramagnetic resonance study
HJ Von Bardeleben, JL Cantin, I Vickridge, G Battistig
Physical Review B 62 (15), 10126, 2000
1072000
Structure and electrochromism of two-dimensional octahedral molecular sieve h’-WO3
J Besnardiere, B Ma, A Torres-Pardo, G Wallez, H Kabbour, ...
Nature Communications 10 (1), 327, 2019
1042019
Irreversible magnetization switching using surface acoustic waves
L Thevenard, JY Duquesne, E Peronne, HJ Von Bardeleben, H Jaffres, ...
Physical Review B 87 (14), 144402, 2013
1042013
Defects in porous p-type Si: An electron-paramagnetic-resonance study
HJ Von Bardeleben, D Stievenard, A Grosman, C Ortega, J Siejka
Physical Review B 47 (16), 10899, 1993
1031993
Identification and magneto-optical properties of the NV center in
HJ Von Bardeleben, JL Cantin, E Rauls, U Gerstmann
Physical Review B 92 (6), 064104, 2015
1002015
NV centers in , and silicon carbide: A variable platform for solid-state qubits and nanosensors
HJ von Bardeleben, JL Cantin, A Csóré, A Gali, E Rauls, U Gerstmann
Physical Review B 94 (12), 121202, 2016
982016
Vacancy defects in p-type created by low-energy electron irradiation
HJ Von Bardeleben, JL Cantin, L Henry, MF Barthe
Physical Review B 62 (16), 10841, 2000
962000
Preparation and characterization of n-type conductive (Al, Co) co-doped ZnO thin films deposited by sputtering from aerogel nanopowders
L El Mir, ZB Ayadi, M Saadoun, K Djessas, HJ Von Bardeleben, S Alaya
Applied Surface Science 254 (2), 570-573, 2007
952007
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