Leonard F. Register
Leonard F. Register
Professor of Electrical and Computer Engineering
Потвърден имейл адрес: austin.utexas.edu
Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices
LF Register, E Rosenbaum, K Yang
Applied physics letters 74 (3), 457-459, 1999
Bilayer pseudospin field-effect transistor (BiSFET): A proposed new logic device
SK Banerjee, LF Register, E Tutuc, D Reddy, AH MacDonald
IEEE Electron Device Letters 30 (2), 158-160, 2008
Mechanism of stress-induced leakage current in MOS capacitors
E Rosenbaum, LF Register
IEEE Transactions on Electron Devices 44 (2), 317-323, 1997
Graphene field-effect transistors
D Reddy, LF Register, GD Carpenter, SK Banerjee
Journal of Physics D: Applied Physics 44 (31), 313001, 2011
Air stable doping and intrinsic mobility enhancement in monolayer molybdenum disulfide by amorphous titanium suboxide encapsulation
A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ...
Nano letters 15 (7), 4329-4336, 2015
Gate-tunable resonant tunneling in double bilayer graphene heterostructures
B Fallahazad, K Lee, S Kang, J Xue, S Larentis, C Corbet, K Kim, ...
Nano letters 15 (1), 428-433, 2015
Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors
D Basu, MJ Gilbert, LF Register, SK Banerjee, AH MacDonald
Applied Physics Letters 92 (4), 2008
Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene- Heterostructures
GW Burg, N Prasad, K Kim, T Taniguchi, K Watanabe, AH MacDonald, ...
Physical review letters 120 (17), 177702, 2018
Graphene for CMOS and beyond CMOS applications
SK Banerjee, LF Register, E Tutuc, D Basu, S Kim, D Reddy, ...
Proceedings of the IEEE 98 (12), 2032-2046, 2010
Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M= Mo, W; X= S, Se, Te) metal-oxide-semiconductor field effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 115 (8), 2014
Atomistic simulation of the electronic states of adatoms in monolayer MoS2
J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee
Applied physics letters 104 (14), 2014
Trap-assisted tunneling current through ultra-thin oxide
J Wu, LF Register, E Rosenbaum
1999 IEEE International Reliability Physics Symposium Proceedings. 37th …, 1999
Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs
S Mudanai, LF Register, AF Tasch, SK Banerjee
IEEE Electron Device Letters 22 (3), 145-147, 2001
Microscopic basis for a sum rule for polar-optical-phonon scattering of carriers in heterostructures
LF Register
Physical Review B 45 (15), 8756, 1992
Two-dimensional bandgap engineering in a novel Si-SiGe pMOSFET with enhanced device performance and scalability
Q Ouyang, XD Chen, S Mudanai, DL Kencke, X Wang, AF Tasch, ...
2000 International Conference on Simulation Semiconductor Processes and …, 2000
Bilayer graphene-hexagonal boron nitride heterostructure negative differential resistance interlayer tunnel FET
S Kang, B Fallahazad, K Lee, H Movva, K Kim, CM Corbet, T Taniguchi, ...
IEEE Electron Device Letters 36 (4), 405-407, 2015
Atomistic full-band simulations of monolayer MoS2 transistors
J Chang, LF Register, SK Banerjee
Applied Physics Letters 103 (22), 2013
Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime
K Hess, LF Register, B Tuttle, J Lyding, IC Kizilyalli
Physica E: Low-dimensional Systems and Nanostructures 3 (1-3), 1-7, 1998
Theory of channel hot-carrier degradation in MOSFETs
K Hess, LF Register, W McMahon, B Tuttle, O Aktas, U Ravaioli, ...
Physica B: Condensed Matter 272 (1-4), 527-531, 1999
Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures
GW Burg, N Prasad, B Fallahazad, A Valsaraj, K Kim, T Taniguchi, ...
Nano letters 17 (6), 3919-3925, 2017
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