Monte Carlo simulation of single event effects RA Weller, MH Mendenhall, RA Reed, RD Schrimpf, KM Warren, ...
IEEE Transactions on Nuclear Science 57 (4), 1726-1746, 2010
278 2010 Impact of low-energy proton induced upsets on test methods and rate predictions BD Sierawski, JA Pellish, RA Reed, RD Schrimpf, KM Warren, RA Weller, ...
IEEE Transactions on Nuclear Science 56 (6), 3085-3092, 2009
218 2009 Muon-induced single event upsets in deep-submicron technology BD Sierawski, MH Mendenhall, RA Reed, MA Clemens, RA Weller, ...
IEEE Transactions on Nuclear Science 57 (6), 3273-3278, 2010
142 2010 Impact of ion energy and species on single event effects analysis RA Reed, RA Weller, MH Mendenhall, JM Lauenstein, KM Warren, ...
IEEE Transactions on Nuclear Science 54 (6), 2312-2321, 2007
141 2007 Multiple-bit upset in 130 nm CMOS technology AD Tipton, JA Pellish, RA Reed, RD Schrimpf, RA Weller, MH Mendenhall, ...
IEEE Transactions on Nuclear Science 53 (6), 3259-3264, 2006
141 2006 Effects of scaling on muon-induced soft errors BD Sierawski, RA Reed, MH Mendenhall, RA Weller, RD Schrimpf, ...
2011 International Reliability Physics Symposium, 3C. 3.1-3C. 3.6, 2011
98 2011 Application of RADSAFE to Model the Single Event Upset Response of a 0.25 m CMOS SRAM KM Warren, RA Weller, BD Sierawski, RA Reed, MH Mendenhall, ...
IEEE Transactions on Nuclear Science 54 (4), 898-903, 2007
91 2007 Monte-Carlo based on-orbit single event upset rate prediction for a radiation hardened by design latch KM Warren, BD Sierawski, RA Reed, RA Weller, C Carmichael, A Lesea, ...
IEEE Transactions on Nuclear Science 54 (6), 2419-2425, 2007
90 2007 The contribution of low-energy protons to the total on-orbit SEU rate NA Dodds, MJ Martinez, PE Dodd, MR Shaneyfelt, FW Sexton, JD Black, ...
IEEE Transactions on Nuclear Science 62 (6), 2440-2451, 2015
87 2015 Ion-induced energy pulse mechanism for single-event burnout in high-voltage SiC power MOSFETs and junction barrier Schottky diodes DR Ball, KF Galloway, RA Johnson, ML Alles, AL Sternberg, BD Sierawski, ...
IEEE Transactions on Nuclear Science 67 (1), 22-28, 2019
85 2019 Electron-induced single-event upsets in static random access memory MP King, RA Reed, RA Weller, MH Mendenhall, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 60 (6), 4122-4129, 2013
80 2013 Physical processes and applications of the Monte Carlo radiative energy deposition (MRED) code RA Reed, RA Weller, MH Mendenhall, DM Fleetwood, KM Warren, ...
IEEE Transactions on Nuclear Science 62 (4), 1441-1461, 2015
77 2015 General framework for single event effects rate prediction in microelectronics RA Weller, RA Reed, KM Warren, MH Mendenhall, BD Sierawski, ...
IEEE Transactions on Nuclear Science 56 (6), 3098-3108, 2009
77 2009 CRÈME: The 2011 revision of the cosmic ray effects on micro-electronics code JH Adams, AF Barghouty, MH Mendenhall, RA Reed, BD Sierawski, ...
IEEE Transactions on Nuclear Science 59 (6), 3141-3147, 2012
70 2012 Heavy-ion-induced current transients in bulk and SOI FinFETs F El-Mamouni, EX Zhang, DR Ball, B Sierawski, MP King, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 59 (6), 2674-2681, 2012
59 2012 Radiation hardness of FDSOI and FinFET technologies ML Alles, RD Schrimpf, RA Reed, LW Massengill, RA Weller, ...
IEEE 2011 International SOI Conference, 1-2, 2011
55 2011 Effects of multi-node charge collection in flip-flop designs at advanced technology nodes VB Sheshadri, BL Bhuva, RA Reed, RA Weller, MH Mendenhall, ...
2010 IEEE International Reliability Physics Symposium, 1026-1030, 2010
52 2010 Dose Enhancement and Reduction in SiO and High- MOS Insulators A Dasgupta, DM Fleetwood, RA Reed, RA Weller, MH Mendenhall, ...
IEEE Transactions on Nuclear Science 57 (6), 3463-3469, 2010
45 2010 Dose Enhancement and Reduction in SiO and High- MOS Insulators A Dasgupta, DM Fleetwood, RA Reed, RA Weller, MH Mendenhall, ...
IEEE Transactions on Nuclear Science 57 (6), 3463-3469, 2010
45 2010 Reducing soft error rate in logic circuits through approximate logic functions BD Sierawski, BL Bhuva, LW Massengill
IEEE transactions on nuclear science 53 (6), 3417-3421, 2006
45 2006