Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays SP DenBaars, D Feezell, K Kelchner, S Pimputkar, CC Pan, CC Yen, ...
Acta Materialia 61 (3), 945-951, 2013
435 2013 Technique for the growth and fabrication of semipolar (Ga, A1, In, B) N thin films, heterostructures, and devices RM Farrell Jr, TJ Baker, A Chakraborty, BA Haskell, PM Pattison, ...
US Patent 7,846,757, 2010
304 2010 Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices RM Farrell, EC Young, F Wu, SP DenBaars, JS Speck
Semiconductor Science and Technology 27 (2), 024001, 2012
296 2012 Demonstration of a semipolar R Sharma, PM Pattison, H Masui, RM Farrell, TJ Baker, BA Haskell, F Wu, ...
Applied Physics Letters 87 (23), 231110, 2005
292 2005 Demonstration of nonpolar m-plane InGaN/GaN laser diodes MC Schmidt, KC Kim, RM Farrell, DF Feezell, DA Cohen, M Saito, K Fujito, ...
Japanese journal of applied physics 46 (3L), L190, 2007
261 2007 High internal and external quantum efficiency InGaN/GaN solar cells E Matioli, C Neufeld, M Iza, SC Cruz, AA Al-Heji, X Chen, RM Farrell, ...
Applied Physics Letters 98 (2), 021102, 2011
248 2011 Electrically-pumped (Ga, In, Al) N vertical-cavity surface-emitting laser DF Feezell, DA Cohen, RM Farrell, M Ishida, S Nakamura
US Patent 7,480,322, 2009
248 2009 Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers RM Farrell, MC Schmidt, KC Kim, H Masui, DF Feezell, JS Speck, ...
US Patent 7,839,903, 2010
247 2010 Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than+/-15 degrees in the C-direction PS Hsu, KM Kelchner, RM Farrell, DA Haeger, H Ohta, A Tyagi, ...
US Patent 9,077,151, 2015
239 2015 Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes DF Feezell, MC Schmidt, KC Kim, RM Farrell, DA Cohen, JS Speck, ...
US Patent 8,211,723, 2012
191 2012 High luminous flux from single crystal phosphor-converted laser-based white lighting system M Cantore, N Pfaff, RM Farrell, JS Speck, S Nakamura, SP DenBaars
Optics Express 24 (2), A215-A221, 2016
163 2016 High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm RM Farrell, CJ Neufeld, SC Cruz, JR Lang, M Iza, S Keller, S Nakamura, ...
Applied Physics Letters 98 (20), 201107, 2011
151 2011 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication C Lee, C Zhang, M Cantore, RM Farrell, SH Oh, T Margalith, JS Speck, ...
Optics express 23 (12), 16232-16237, 2015
149 2015 2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system C Lee, C Shen, HM Oubei, M Cantore, B Janjua, TK Ng, RM Farrell, ...
Optics express 23 (23), 29779-29787, 2015
125 2015 AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm A Tyagi, RM Farrell, KM Kelchner, CY Huang, PS Hsu, DA Haeger, ...
Applied Physics Express 3 (1), 011002, 2009
121 2009 AlGaN-cladding-free nonpolar InGaN/GaN laser diodes DF Feezell, MC Schmidt, RM Farrell, KC Kim, M Saito, K Fujito, DA Cohen, ...
Japanese journal of applied physics 46 (4L), L284, 2007
108 2007 Formation and reduction of pyramidal hillocks on A Hirai, Z Jia, MC Schmidt, RM Farrell, SP DenBaars, S Nakamura, ...
Applied Physics Letters 91 (19), 191906, 2007
107 2007 Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes RM Farrell, DF Feezell, MC Schmidt, DA Haeger, KM Kelchner, K Iso, ...
Japanese Journal of Applied Physics 46 (8L), L761, 2007
101 2007 Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture JT Leonard, DA Cohen, BP Yonkee, RM Farrell, T Margalith, S Lee, ...
Applied Physics Letters 107 (1), 011102, 2015
98 2015 Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers J Piprek, R Farrell, S DenBaars, S Nakamura
IEEE photonics technology letters 18 (1), 7-9, 2005
94 2005 