Robert M. Farrell
Robert M. Farrell
Assistant Professor, ECE Department, University of Wisconsin–Madison
Потвърден имейл адрес: wisc.edu
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
SP DenBaars, D Feezell, K Kelchner, S Pimputkar, CC Pan, CC Yen, ...
Acta Materialia 61 (3), 945-951, 2013
Technique for the growth and fabrication of semipolar (Ga, A1, In, B) N thin films, heterostructures, and devices
RM Farrell Jr, TJ Baker, A Chakraborty, BA Haskell, PM Pattison, ...
US Patent 7,846,757, 2010
Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices
RM Farrell, EC Young, F Wu, SP DenBaars, JS Speck
Semiconductor Science and Technology 27 (2), 024001, 2012
Demonstration of a semipolar (101¯ 3¯) InGaN∕ GaN green light emitting diode
R Sharma, PM Pattison, H Masui, RM Farrell, TJ Baker, BA Haskell, F Wu, ...
Applied Physics Letters 87 (23), 2005
Electrically-pumped (Ga, In, Al) N vertical-cavity surface-emitting laser
DF Feezell, DA Cohen, RM Farrell, M Ishida, S Nakamura
US Patent 7,480,322, 2009
Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers
RM Farrell, MC Schmidt, KC Kim, H Masui, DF Feezell, JS Speck, ...
US Patent 7,839,903, 2010
Demonstration of nonpolar m-plane InGaN/GaN laser diodes
MC Schmidt, KC Kim, RM Farrell, DF Feezell, DA Cohen, M Saito, K Fujito, ...
Japanese journal of applied physics 46 (3L), L190, 2007
Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than+/-15 degrees in the C-direction
PS Hsu, KM Kelchner, RM Farrell, DA Haeger, H Ohta, A Tyagi, ...
US Patent 9,077,151, 2015
High internal and external quantum efficiency InGaN/GaN solar cells
E Matioli, C Neufeld, M Iza, SC Cruz, AA Al-Heji, X Chen, RM Farrell, ...
Applied Physics Letters 98 (2), 2011
Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes
DF Feezell, MC Schmidt, KC Kim, RM Farrell, DA Cohen, JS Speck, ...
US Patent 8,211,723, 2012
High luminous flux from single crystal phosphor-converted laser-based white lighting system
M Cantore, N Pfaff, RM Farrell, JS Speck, S Nakamura, SP DenBaars
Optics Express 24 (2), A215-A221, 2016
4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication
C Lee, C Zhang, M Cantore, RM Farrell, SH Oh, T Margalith, JS Speck, ...
Optics express 23 (12), 16232-16237, 2015
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
RM Farrell, CJ Neufeld, SC Cruz, JR Lang, M Iza, S Keller, S Nakamura, ...
Applied Physics Letters 98 (20), 2011
2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system
C Lee, C Shen, HM Oubei, M Cantore, B Janjua, TK Ng, RM Farrell, ...
Optics express 23 (23), 29779-29787, 2015
AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm
A Tyagi, RM Farrell, KM Kelchner, CY Huang, PS Hsu, DA Haeger, ...
Applied Physics Express 3 (1), 011002, 2009
AlGaN-cladding-free nonpolar InGaN/GaN laser diodes
DF Feezell, MC Schmidt, RM Farrell, KC Kim, M Saito, K Fujito, DA Cohen, ...
Japanese journal of applied physics 46 (4L), L284, 2007
Formation and reduction of pyramidal hillocks on m-plane {11 00} GaN
A Hirai, Z Jia, MC Schmidt, RM Farrell, SP DenBaars, S Nakamura, ...
Applied Physics Letters 91 (19), 2007
Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture
JT Leonard, DA Cohen, BP Yonkee, RM Farrell, T Margalith, S Lee, ...
Applied Physics Letters 107 (1), 2015
High luminous efficacy green light-emitting diodes with AlGaN cap layer
AI Alhassan, RM Farrell, B Saifaddin, A Mughal, F Wu, SP DenBaars, ...
Optics express 24 (16), 17868-17873, 2016
Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes
RM Farrell, DF Feezell, MC Schmidt, DA Haeger, KM Kelchner, K Iso, ...
Japanese Journal of Applied Physics 46 (8L), L761, 2007
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