| Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays SP DenBaars, D Feezell, K Kelchner, S Pimputkar, CC Pan, CC Yen, ... Acta Materialia 61 (3), 945-951, 2013 | 481 | 2013 |
| Technique for the growth and fabrication of semipolar (Ga, A1, In, B) N thin films, heterostructures, and devices RM Farrell Jr, TJ Baker, A Chakraborty, BA Haskell, PM Pattison, ... US Patent 7,846,757, 2010 | 334 | 2010 |
| Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices RM Farrell, EC Young, F Wu, SP DenBaars, JS Speck Semiconductor Science and Technology 27 (2), 024001, 2012 | 310 | 2012 |
| Demonstration of a semipolar (101¯ 3¯) InGaN∕ GaN green light emitting diode R Sharma, PM Pattison, H Masui, RM Farrell, TJ Baker, BA Haskell, F Wu, ... Applied Physics Letters 87 (23), 2005 | 304 | 2005 |
| Electrically-pumped (Ga, In, Al) N vertical-cavity surface-emitting laser DF Feezell, DA Cohen, RM Farrell, M Ishida, S Nakamura US Patent 7,480,322, 2009 | 284 | 2009 |
| Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers RM Farrell, MC Schmidt, KC Kim, H Masui, DF Feezell, JS Speck, ... US Patent 7,839,903, 2010 | 273 | 2010 |
| Demonstration of nonpolar m-plane InGaN/GaN laser diodes MC Schmidt, KC Kim, RM Farrell, DF Feezell, DA Cohen, M Saito, K Fujito, ... Japanese journal of applied physics 46 (3L), L190, 2007 | 269 | 2007 |
| Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than+/-15 degrees in the C-direction PS Hsu, KM Kelchner, RM Farrell, DA Haeger, H Ohta, A Tyagi, ... US Patent 9,077,151, 2015 | 265 | 2015 |
| High internal and external quantum efficiency InGaN/GaN solar cells E Matioli, C Neufeld, M Iza, SC Cruz, AA Al-Heji, X Chen, RM Farrell, ... Applied Physics Letters 98 (2), 2011 | 265 | 2011 |
| Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes DF Feezell, MC Schmidt, KC Kim, RM Farrell, DA Cohen, JS Speck, ... US Patent 8,211,723, 2012 | 214 | 2012 |
| High luminous flux from single crystal phosphor-converted laser-based white lighting system M Cantore, N Pfaff, RM Farrell, JS Speck, S Nakamura, SP DenBaars Optics Express 24 (2), A215-A221, 2016 | 188 | 2016 |
| 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication C Lee, C Zhang, M Cantore, RM Farrell, SH Oh, T Margalith, JS Speck, ... Optics express 23 (12), 16232-16237, 2015 | 162 | 2015 |
| High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm RM Farrell, CJ Neufeld, SC Cruz, JR Lang, M Iza, S Keller, S Nakamura, ... Applied Physics Letters 98 (20), 2011 | 153 | 2011 |
| 2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system C Lee, C Shen, HM Oubei, M Cantore, B Janjua, TK Ng, RM Farrell, ... Optics express 23 (23), 29779-29787, 2015 | 134 | 2015 |
| AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm A Tyagi, RM Farrell, KM Kelchner, CY Huang, PS Hsu, DA Haeger, ... Applied Physics Express 3 (1), 011002, 2009 | 119 | 2009 |
| AlGaN-cladding-free nonpolar InGaN/GaN laser diodes DF Feezell, MC Schmidt, RM Farrell, KC Kim, M Saito, K Fujito, DA Cohen, ... Japanese journal of applied physics 46 (4L), L284, 2007 | 114 | 2007 |
| Formation and reduction of pyramidal hillocks on m-plane {11 00} GaN A Hirai, Z Jia, MC Schmidt, RM Farrell, SP DenBaars, S Nakamura, ... Applied Physics Letters 91 (19), 2007 | 113 | 2007 |
| Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture JT Leonard, DA Cohen, BP Yonkee, RM Farrell, T Margalith, S Lee, ... Applied Physics Letters 107 (1), 2015 | 107 | 2015 |
| Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes RM Farrell, DF Feezell, MC Schmidt, DA Haeger, KM Kelchner, K Iso, ... Japanese Journal of Applied Physics 46 (8L), L761, 2007 | 104 | 2007 |
| High luminous efficacy green light-emitting diodes with AlGaN cap layer AI Alhassan, RM Farrell, B Saifaddin, A Mughal, F Wu, SP DenBaars, ... Optics express 24 (16), 17868-17873, 2016 | 103 | 2016 |
