A Van Der Waals Homojunction: Ideal p–n Diode Behavior in MoSe2 Y Jin, DH Keum, SJ An, J Kim, HS Lee, YH Lee
Advanced Materials 27 (37), 5534-5540, 2015
255 2015 Charge Transport in MoS2 /WSe2 van der Waals Heterostructure with Tunable Inversion Layer MH Doan, Y Jin, S Adhikari, S Lee, J Zhao, SC Lim, YH Lee
ACS nano 11 (4), 3832-3840, 2017
209 2017 Heterogeneous Defect Domains in Single‐Crystalline Hexagonal WS2 HY Jeong*, Y Jin*, SJ Yun, J Zhao, J Baik, DH Keum, HS Lee, YH Lee
Advanced Materials 29 (15), 1605043, 2017
191 2017 Oxidation effect in octahedral hafnium disulfide thin film SH Chae*, Y Jin*, TS Kim, DS Chung, H Na, H Nam, H Kim, DJ Perello, ...
ACS nano 10 (1), 1309-1316, 2016
134 2016 Electrical Transport Properties of Polymorphic MoS2 JS Kim, J Kim, J Zhao, S Kim, JH Lee, Y Jin, H Choi, BH Moon, JJ Bae, ...
ACS nano 10 (8), 7500-7506, 2016
109 2016 Optical Gain in MoS2 via Coupling with Nanostructured Substrate: Fabry–Perot Interference and Plasmonic Excitation HY Jeong, UJ Kim, H Kim, GH Han, H Lee, MS Kim, Y Jin, TH Ly, SY Lee, ...
ACS nano 10 (9), 8192-8198, 2016
82 2016 Chemically modulated band gap in bilayer graphene memory transistors with high on/off ratio SY Lee, DL Duong, QA Vu, Y Jin, P Kim, YH Lee
ACS nano 9 (9), 9034-9042, 2015
81 2015 Role of alkali metal promoter in enhancing lateral growth of monolayer transition metal dichalcogenides H Kim, GH Han, SJ Yun, J Zhao, DH Keum, HY Jeong, TH Ly, Y Jin, ...
Nanotechnology 28 (36), 36LT01, 2017
79 2017 Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS2 Field-Effect Transistors BH Moon, GH Han, H Kim, H Choi, JJ Bae, J Kim, Y Jin, HY Jeong, ...
ACS applied materials & interfaces 9 (12), 11240-11246, 2017
78 2017 Selective Amplification of the Primary Exciton in a HS Lee, MS Kim, Y Jin, GH Han, YH Lee, J Kim
Physical review letters 115 (22), 226801, 2015
73 2015 Reconfigurable exciton-plasmon interconversion for nanophotonic circuits HS Lee, DH Luong, MS Kim, Y Jin, H Kim, S Yun, YH Lee
Nature communications 7 (1), 13663, 2016
64 2016 Efficient Exciton–Plasmon Conversion in Ag Nanowire/Monolayer MoS2 Hybrids: Direct Imaging and Quantitative Estimation of Plasmon Coupling and Propagation HS Lee, MS Kim, Y Jin, GH Han, YH Lee, J Kim
Advanced Optical Materials 3 (7), 943-947, 2015
63 2015 Multiple Magnetic Phases in Van Der Waals Mn‐Doped SnS2 Semiconductor H Bouzid, R Sahoo, SJ Yun, K Singh, Y Jin, J Jiang, D Yoon, HY Song, ...
Advanced Functional Materials 31 (29), 2102560, 2021
22 2021 Room‐Temperature Mesoscopic Fluctuations and Coulomb Drag in Multilayer WSe2 MH Doan, Y Jin, TK Chau, MK Joo, YH Lee
Advanced Materials 31 (17), 1900154, 2019
22 2019 Coulomb drag transistor using a graphene and MoS2 heterostructure Y Jin, MK Joo, BH Moon, H Kim, S Lee, HY Jeong, YH Lee
Communications Physics 3 (1), 189, 2020
20 2020 Probing giant Zeeman shift in vanadium-doped J Jiang, LAT Nguyen, TD Nguyen, DH Luong, DY Kim, Y Jin, P Kim, ...
Physical Review B 103 (1), 014441, 2021
19 2021 Enhanced magnetic moment with cobalt dopant in SnS2 semiconductor H Bouzid, S Rodan, K Singh, Y Jin, J Jiang, D Yoon, HY Song, YH Lee
APL Materials 9 (5), 2021
9 2021 Electron-hole pair condensation in Graphene/MoS2 heterointerface MK Joo*, Y Jin*, BH Moon, H Kim, S Lee, YH Lee
arXiv preprint arXiv:1711.00606, 2017
2 2017 Coulomb drag transistor via graphene/MoS2 heterostructures Y Jin*, MK Joo*, BH Moon, H Kim, S Lee, HY Jeong, HY Kwak, YH Lee
arXiv preprint arXiv:1710.11365, 2017
2 2017 
Hyun KimCINAP, Sungkyunkwan UniversityПотвърден имейл адрес: skku.edu
