Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy B Heying, R Averbeck, LF Chen, E Haus, H Riechert, JS Speck Journal of Applied Physics 88 (4), 1855-1860, 2000 | 601 | 2000 |
Silicon-nanowire transistors with intruded nickel-silicide contacts WM Weber, L Geelhaar, AP Graham, E Unger, GS Duesberg, M Liebau, ... Nano letters 6 (12), 2660-2666, 2006 | 322 | 2006 |
Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content M Hetterich, MD Dawson, AY Egorov, D Bernklau, H Riechert Applied Physics Letters 76 (8), 1030-1032, 2000 | 258 | 2000 |
Monolithic VCSEL with InGaAsN active region emitting at 1.28/spl mu/m and CW output power exceeding 500/spl mu/W at room temperature G Steinle, H Riechert, AY Egorov Electronics Letters 37 (2), 93-95, 2001 | 252* | 2001 |
Suitability of Au-and self-assisted GaAs nanowires for optoelectronic applications S Breuer, C Pfüller, T Flissikowski, O Brandt, HT Grahn, L Geelhaar, ... Nano letters 11 (3), 1276-1279, 2011 | 250 | 2011 |
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-/spl mu/m GaInNAs-based quantum-well lasers R Fehse, S Tomic, AR Adams, SJ Sweeney, EP O'Reilly, A Andreev, ... IEEE Journal of selected topics in quantum electronics 8 (4), 801-810, 2002 | 209 | 2002 |
Direct comparison of catalyst-free and catalyst-induced GaN nanowires C Chèze, L Geelhaar, O Brandt, WM Weber, H Riechert, S Münch, ... Nano Research 3 (7), 528-536, 2010 | 206 | 2010 |
Development of InGaAsN-based 1.3 μm VCSELs H Riechert, A Ramakrishnan, G Steinle Semiconductor science and technology 17 (8), 892, 2002 | 197 | 2002 |
Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius V Consonni, M Knelangen, L Geelhaar, A Trampert, H Riechert Physical Review B 81 (8), 085310, 2010 | 194 | 2010 |
8 W continuous wave operation of InGaAsN lasers at 1.3 µm DA Livshits, AY Egorov, H Riechert Electronics Letters 36 (16), 1381-1382, 2000 | 194 | 2000 |
Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data M Schuster, PO Gervais, B Jobst, W Hösler, R Averbeck, H Riechert, ... Journal of Physics D: Applied Physics 32 (10A), A56, 1999 | 178 | 1999 |
Theoretical and experimental analysis of 1.3-/spl mu/m InGaAsN/GaAs lasers S Tomic, EP O'Reilly, R Fehse, SJ Sweeney, AR Adams, AD Andreev, ... IEEE Journal of selected topics in quantum electronics 9 (5), 1228-1238, 2003 | 177 | 2003 |
The nanorod approach: GaN NanoLEDs for solid state lighting A Waag, X Wang, S Fündling, J Ledig, M Erenburg, R Neumann, ... physica status solidi (c) 8 (7‐8), 2296-2301, 2011 | 172 | 2011 |
Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC (0001) F Fromm, MH Oliveira Jr, A Molina-Sanchez, M Hundhausen, JMJ Lopes, ... New Journal of Physics 15 (4), 043031, 2013 | 164 | 2013 |
Growth diagram and morphologies of AlN thin films grown by molecular beam epitaxy G Koblmueller, R Averbeck, L Geelhaar, H Riechert, W Hösler, P Pongratz Journal of applied physics 93 (12), 9591-9596, 2003 | 162 | 2003 |
Recombination mechanisms in GaInNAs/GaAs multiple quantum wells A Kaschner, T Lüttgert, H Born, A Hoffmann, AY Egorov, H Riechert Applied Physics Letters 78 (10), 1391-1393, 2001 | 154 | 2001 |
Formation of high-quality quasi-free-standing bilayer graphene on SiC (0 0 0 1) by oxygen intercalation upon annealing in air MH Oliveira Jr, T Schumann, F Fromm, R Koch, M Ostler, M Ramsteiner, ... Carbon 52, 83-89, 2013 | 151 | 2013 |
Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer V Consonni, M Hanke, M Knelangen, L Geelhaar, A Trampert, H Riechert Physical Review B 83 (3), 035310, 2011 | 151 | 2011 |
Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons O Brandt, C Pfüller, C Chèze, L Geelhaar, H Riechert Physical Review B 81 (4), 045302, 2010 | 149 | 2010 |
High power CW operation of InGaAsN lasers at 1.3 µm AY Egorov, D Bernklau, D Livshits, V Ustinov, ZI Alferov, H Riechert Electronics Letters 35 (19), 1643-1644, 1999 | 149 | 1999 |