Следене
Elisabeth Blanquet
Elisabeth Blanquet
Няма данни за членство
Потвърден имейл адрес: simap.grenoble-inp.fr
Заглавие
Позовавания
Позовавания
Година
A thermodynamic evaluation of four Si-M (M= Mo, Ta, Ti, W) binary systems
C Vahlas, PY Chevalier, E Blanquet
Calphad 13 (3), 273-292, 1989
1171989
Thermodynamic heat transfer and mass transport modeling of the sublimation growth of silicon carbide crystals
M Pons, E Blanquet, JM Dedulle, I Garcon, R Madar, C Bernard
Journal of the Electrochemical Society 143 (11), 3727, 1996
1011996
State of the art in the modelling of SiC sublimation growth
M Pons, M Anikin, K Chourou, JM Dedulle, R Madar, E Blanquet, A Pisch, ...
Materials Science and Engineering: B 61, 18-28, 1999
751999
Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept
J Meziere, M Ucar, E Blanquet, M Pons, P Ferret, L Di Cioccio
Journal of Crystal Growth 267 (3-4), 436-451, 2004
722004
Preferential orientation of fluorine-doped SnO2 thin films: The effects of growth temperature
V Consonni, G Rey, H Roussel, B Doisneau, E Blanquet, D Bellet
Acta materialia 61 (1), 22-31, 2013
682013
Superconducting properties of very high quality NbN thin films grown by high temperature chemical vapor deposition
D Hazra, N Tsavdaris, S Jebari, A Grimm, F Blanchet, F Mercier, ...
Superconductor Science and Technology 29 (10), 105011, 2016
562016
Application of equilibrium thermodynamics to the development of diffusion barriers for copper metallization
CE Ramberg, E Blanquet, M Pons, C Bernard, R Madar
Microelectronic engineering 50 (1-4), 357-368, 2000
532000
Low-temperature low-resistivity PEALD TiN using TDMAT under hydrogen reducing ambient
P Caubet, T Blomberg, R Benaboud, C Wyon, E Blanquet, JP Gonchond, ...
Journal of The Electrochemical Society 155 (8), H625, 2008
522008
SiC single crystal growth by a modified physical vapor transport technique
P Wellmann, P Desperrier, R Müller, T Straubinger, A Winnacker, F Baillet, ...
Journal of Crystal Growth 275 (1-2), e555-e560, 2005
522005
Atomic layer deposition of tantalum oxide thin films for their use as diffusion barriers in microelectronic devices
A Lintanf-Salaün, A Mantoux, E Djurado, E Blanquet
Microelectronic Engineering 87 (3), 373-378, 2010
512010
Evaluation of LPCVD Me Si N (Me Ta, Ti, W, Re) diffusion barriers for Cu metallizations
E Blanquet, AM Dutron, V Ghetta, C Bernard, R Madar
Microelectronic Engineering 37, 189-195, 1997
501997
Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy
M Balaji, A Claudel, V Fellmann, I Gelard, E Blanquet, R Boichot, A Pierret, ...
Journal of Alloys and Compounds 526, 103-109, 2012
452012
Characterization of Al2O3 thin films prepared by thermal ALD
C Barbos, D Blanc-Pelissier, A Fave, E Blanquet, A Crisci, E Fourmond, ...
Energy Procedia 77, 558-564, 2015
442015
Niobium nitride thin films deposited by high temperature chemical vapor deposition
F Mercier, S Coindeau, S Lay, A Crisci, M Benz, T Encinas, R Boichot, ...
Surface and Coatings Technology 260, 126-132, 2014
392014
Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD
A Claudel, E Blanquet, D Chaussende, M Audier, D Pique, M Pons
Journal of Crystal Growth 311 (13), 3371-3379, 2009
392009
LPCVD and PACVD (Ti, Al) N films: morphology and mechanical properties
S Anderbouhr, V Ghetta, E Blanquet, C Chabrol, F Schuster, C Bernard, ...
Surface and Coatings Technology 115 (2-3), 103-110, 1999
381999
Al2O3 thin films deposited by thermal atomic layer deposition: characterization for photovoltaic applications
C Barbos, D Blanc-Pelissier, A Fave, C Botella, P Regreny, G Grenet, ...
Thin Solid Films 617, 108-113, 2016
362016
Plasma etching of at elevated temperatures in chlorine-based chemistry
M Hélot, T Chevolleau, L Vallier, O Joubert, E Blanquet, A Pisch, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 24 (1 …, 2006
352006
Evolution of crystal structure during the initial stages of ZnO atomic layer deposition
R Boichot, L Tian, MI Richard, A Crisci, A Chaker, V Cantelli, S Coindeau, ...
Chemistry of Materials 28 (2), 592-600, 2016
322016
High temperature chemical vapor deposition of aluminum nitride, growth and evaluation
M Pons, R Boichot, N Coudurier, A Claudel, E Blanquet, S Lay, F Mercier, ...
Surface and Coatings Technology 230, 111-118, 2013
322013
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