A thermodynamic evaluation of four Si-M (M= Mo, Ta, Ti, W) binary systems C Vahlas, PY Chevalier, E Blanquet
Calphad 13 (3), 273-292, 1989
117 1989 Thermodynamic heat transfer and mass transport modeling of the sublimation growth of silicon carbide crystals M Pons, E Blanquet, JM Dedulle, I Garcon, R Madar, C Bernard
Journal of the Electrochemical Society 143 (11), 3727, 1996
101 1996 State of the art in the modelling of SiC sublimation growth M Pons, M Anikin, K Chourou, JM Dedulle, R Madar, E Blanquet, A Pisch, ...
Materials Science and Engineering: B 61, 18-28, 1999
75 1999 Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept J Meziere, M Ucar, E Blanquet, M Pons, P Ferret, L Di Cioccio
Journal of Crystal Growth 267 (3-4), 436-451, 2004
72 2004 Preferential orientation of fluorine-doped SnO2 thin films: The effects of growth temperature V Consonni, G Rey, H Roussel, B Doisneau, E Blanquet, D Bellet
Acta materialia 61 (1), 22-31, 2013
68 2013 Superconducting properties of very high quality NbN thin films grown by high temperature chemical vapor deposition D Hazra, N Tsavdaris, S Jebari, A Grimm, F Blanchet, F Mercier, ...
Superconductor Science and Technology 29 (10), 105011, 2016
56 2016 Application of equilibrium thermodynamics to the development of diffusion barriers for copper metallization CE Ramberg, E Blanquet, M Pons, C Bernard, R Madar
Microelectronic engineering 50 (1-4), 357-368, 2000
53 2000 Low-temperature low-resistivity PEALD TiN using TDMAT under hydrogen reducing ambient P Caubet, T Blomberg, R Benaboud, C Wyon, E Blanquet, JP Gonchond, ...
Journal of The Electrochemical Society 155 (8), H625, 2008
52 2008 SiC single crystal growth by a modified physical vapor transport technique P Wellmann, P Desperrier, R Müller, T Straubinger, A Winnacker, F Baillet, ...
Journal of Crystal Growth 275 (1-2), e555-e560, 2005
52 2005 Atomic layer deposition of tantalum oxide thin films for their use as diffusion barriers in microelectronic devices A Lintanf-Salaün, A Mantoux, E Djurado, E Blanquet
Microelectronic Engineering 87 (3), 373-378, 2010
51 2010 Evaluation of LPCVD Me Si N (Me Ta, Ti, W, Re) diffusion barriers for Cu metallizations E Blanquet, AM Dutron, V Ghetta, C Bernard, R Madar
Microelectronic Engineering 37, 189-195, 1997
50 1997 Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy M Balaji, A Claudel, V Fellmann, I Gelard, E Blanquet, R Boichot, A Pierret, ...
Journal of Alloys and Compounds 526, 103-109, 2012
45 2012 Characterization of Al2O3 thin films prepared by thermal ALD C Barbos, D Blanc-Pelissier, A Fave, E Blanquet, A Crisci, E Fourmond, ...
Energy Procedia 77, 558-564, 2015
44 2015 Niobium nitride thin films deposited by high temperature chemical vapor deposition F Mercier, S Coindeau, S Lay, A Crisci, M Benz, T Encinas, R Boichot, ...
Surface and Coatings Technology 260, 126-132, 2014
39 2014 Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD A Claudel, E Blanquet, D Chaussende, M Audier, D Pique, M Pons
Journal of Crystal Growth 311 (13), 3371-3379, 2009
39 2009 LPCVD and PACVD (Ti, Al) N films: morphology and mechanical properties S Anderbouhr, V Ghetta, E Blanquet, C Chabrol, F Schuster, C Bernard, ...
Surface and Coatings Technology 115 (2-3), 103-110, 1999
38 1999 Al2O3 thin films deposited by thermal atomic layer deposition: characterization for photovoltaic applications C Barbos, D Blanc-Pelissier, A Fave, C Botella, P Regreny, G Grenet, ...
Thin Solid Films 617, 108-113, 2016
36 2016 Plasma etching of at elevated temperatures in chlorine-based chemistry M Hélot, T Chevolleau, L Vallier, O Joubert, E Blanquet, A Pisch, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 24 (1 …, 2006
35 2006 Evolution of crystal structure during the initial stages of ZnO atomic layer deposition R Boichot, L Tian, MI Richard, A Crisci, A Chaker, V Cantelli, S Coindeau, ...
Chemistry of Materials 28 (2), 592-600, 2016
32 2016 High temperature chemical vapor deposition of aluminum nitride, growth and evaluation M Pons, R Boichot, N Coudurier, A Claudel, E Blanquet, S Lay, F Mercier, ...
Surface and Coatings Technology 230, 111-118, 2013
32 2013