Yuanzheng Yue
Yuanzheng Yue
NXP Semiconductors
Потвърден имейл адрес: asu.edu
InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz
Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ...
IEEE Electron Device Letters 33 (7), 988-990, 2012
AlGaN/GaN MOS-HEMT WithDielectric andInterfacial Passivation Layer Grown by Atomic Layer Deposition
Y Yue, Y Hao, J Zhang, J Ni, W Mao, Q Feng, L Liu
IEEE electron device letters 29 (8), 838-840, 2008
Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400 GHz
Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, B Song, ...
Japanese Journal of Applied Physics 52 (8S), 08JN14, 2013
Quaternary Barrier InAlGaN HEMTs With of 230/300 GHz
R Wang, G Li, G Karbasian, J Guo, B Song, Y Yue, Z Hu, O Laboutin, ...
IEEE electron device letters 34 (3), 378-380, 2013
InGaN channel high-electron-mobility transistors with InAlGaN barrier and fT/fmax of 260/220 GHz
R Wang, G Li, G Karbasian, J Guo, F Faria, Z Hu, Y Yue, J Verma, ...
Applied Physics Express 6 (1), 016503, 2012
Ultrathin body GaN-on-insulator quantum well FETs with regrown ohmic contacts
G Li, R Wang, J Guo, J Verma, Z Hu, Y Yue, F Faria, Y Cao, M Kelly, ...
IEEE electron device letters 33 (5), 661-663, 2012
GaN MOS-HEMT using ultra-thin Al2O3 dielectric grown by atomic layer deposition
Y Yuan-Zheng, H Yue, F Qian, Z Jin-Cheng, M Xiao-Hua, N Jin-Yu
Chinese Physics Letters 24 (8), 2419, 2007
Effect of fringing capacitances on the RF performance of GaN HEMTs with T-gates
B Song, B Sensale-Rodriguez, R Wang, J Guo, Z Hu, Y Yue, F Faria, ...
IEEE Transactions on Electron Devices 61 (3), 747-754, 2014
A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress
Y Yuan-Zheng, H Yue, Z Jin-Cheng, F Qian, N Jin-Yu, M Xiao-Hua
Chinese Physics B 17 (4), 1405, 2008
Impact of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs
Z Hu, Y Yue, M Zhu, B Song, S Ganguly, J Bergman, D Jena, HG Xing
Applied Physics Express 7 (3), 031002, 2014
Study of GaN MOS-HEMT using ultrathin Al2O3 dielectric grown by atomic layer deposition
YZ Yue, Y Hao, Q Feng, JC Zhang, XH Ma, JY Ni
Science in China Series E: Technological Sciences 52 (9), 2762-2766, 2009
The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment
F Qian, T Yuan, B Zhi-Wei, Y Yuan-Zheng, N Jin-Yu, Z Jin-Cheng, H Yue, ...
Chinese Physics B 18 (7), 3014, 2009
Multi-nanolayered VO2/Sapphire Thin Film via Spinodal Decomposition
G Sun, X Cao, Y Yue, X Gao, S Long, N Li, R Li, H Luo, P Jin
Scientific Reports 8 (1), 5342, 2018
AlGaN/GaN MOS-HEMT with stack gate HfO2/Al2O3 structure grown by atomic layer deposition
YZ Yue, Y Hao, JC Zhang
2008 IEEE Compound Semiconductor Integrated Circuits Symposium, 1-4, 2008
Semiconductor devices with regrown contacts and methods of fabrication
JH Huang, Y Yue
US Patent 10,403,718, 2019
Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases
Y Zhao, W Chen, W Li, M Zhu, Y Yue, B Song, J Encomendero, ...
Applied Physics Letters 105 (17), 2014
The reduction of gate leakage of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors by N2 plasma pretreatment
Q Feng, Y Hao, YZ Yue
Semiconductor science and technology 24 (2), 025030, 2009
Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation
R Wang, G Li, J Guo, B Song, J Verma, Z Hu, Y Yue, K Nomoto, ...
2013 IEEE International Electron Devices Meeting, 28.6. 1-28.6. 4, 2013
Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing
Y Yue, X Yan, W Li, HG Xing, D Jena, P Fay
Journal of Vacuum Science & Technology B 32 (6), 2014
GaN MOS-HEMT Using Ultrathin Al~ 2O~ 3 Dielectric with f~ m~ a~ x of 30.8 GHz
H Yue, Y Yuanzheng, F Qian, Z Jincheng, M Xiaohua, N Jinyu
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