A self-consistent full 3-D real-space NEGF simulator for studying nonperturbative effects in nano-MOSFETs A Martinez, M Bescond, JR Barker, A Svizhenko, MP Anantram, C Millar, ...
IEEE Transactions on Electron Devices 54 (9), 2213-2222, 2007
172 2007 Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors A Martinez, M Aldegunde, N Seoane, AR Brown, JR Barker, A Asenov
IEEE Transactions on Electron Devices 58 (8), 2209-2217, 2011
85 2011 Study of discrete doping-induced variability in junctionless nanowire MOSFETs using dissipative quantum transport simulations M Aldegunde, A Martinez, JR Barker
IEEE Electron Device Letters 33 (2), 194-196, 2012
80 2012 Current variability in Si nanowire MOSFETs due to random dopants in the source/drain regions: A fully 3-D NEGF simulation study N Seoane, A Martinez, AR Brown, JR Barker, A Asenov
IEEE Transactions on electron devices 56 (7), 1388-1395, 2009
80 2009 Implementation of the density gradient quantum corrections for 3-D simulations of multigate nanoscaled transistors AJ Garcia-Loureiro, N Seoane, M Aldegunde, R Valin, A Asenov, ...
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2011
78 2011 Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green’s function techniques A Asenov, AR Brown, G Roy, B Cheng, C Alexander, C Riddet, U Kovac, ...
Journal of computational electronics 8, 349-373, 2009
76 2009 Monte Carlo study of high-field carrier transport in M Hjelm, HE Nilsson, A Martinez, KF Brennan, E Bellotti
Journal of applied physics 93 (2), 1099-1107, 2003
72 2003 Variability in Si nanowire MOSFETs due to the combined effect of interface roughness and random dopants: A fully three-dimensional NEGF simulation study A Martinez, N Seoane, AR Brown, JR Barker, A Asenov
IEEE Transactions on electron devices 57 (7), 1626-1635, 2010
64 2010 Advanced simulation of statistical variability and reliability in nano CMOS transistors A Asenov, S Roy, RA Brown, G Roy, C Alexander, C Riddet, C Millar, ...
2008 IEEE International Electron Devices Meeting, 1-1, 2008
51 2008 Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect … M Aldegunde, A Martinez, A Asenov
Journal of Applied Physics 110 (9), 2011
47 2011 3-D nonequilibrium Green's function simulation of nonperturbative scattering from discrete dopants in the source and drain of a silicon nanowire transistor A Martinez, N Seoane, AR Brown, JR Barker, A Asenov
IEEE Transactions on Nanotechnology 8 (5), 603-610, 2009
41 2009 Impact of body-thickness-dependent band structure on scaling of double-gate MOSFETs: A DFT/NEGF study A Martinez, K Kalna, PV Sushko, AL Shluger, JR Barker, A Asenov
IEEE transactions on nanotechnology 8 (2), 159-166, 2008
39 2008 Use of density gradient quantum corrections in the simulation of statistical variability in MOSFETs AR Brown, JR Watling, G Roy, C Riddet, CL Alexander, U Kovac, ...
Journal of computational electronics 9, 187-196, 2010
37 2010 NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants A Martinez, M Aldegunde, AR Brown, S Roy, A Asenov
Solid-State Electronics 71, 101-105, 2012
36 2012 The impact of random dopant aggregation in source and drain on the performance of ballistic DG Nano-MOSFETs: A NEGF study A Martinez, JR Barker, A Svizhenko, MP Anantram, A Asenov
IEEE transactions on nanotechnology 6 (4), 438-445, 2007
36 2007 3-D finite element Monte Carlo simulations of scaled Si SOI FinFET with different cross sections D Nagy, MA Elmessary, M Aldegunde, R Valin, A Martinez, J Lindberg, ...
IEEE Transactions on Nanotechnology 14 (1), 93-100, 2014
23 2014 A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs P Palestri, C Alexander, A Asenov, V Aubry-Fortuna, G Baccarani, ...
Solid-state electronics 53 (12), 1293-1302, 2009
23 2009 Numerical modeling of hole interband tunneling in wurtzite GaN and SiC HE Nilsson, A Martinez, E Ghillino, U Sannemo, E Bellotti, M Goano
Journal of Applied Physics 90 (6), 2847-2852, 2001
23 2001 Study of individual phonon scattering mechanisms and the validity of Matthiessen's rule in a gate-all-around silicon nanowire transistor M Aldegunde, A Martinez, JR Barker
Journal of applied physics 113 (1), 2013
22 2013 Comparison of density gradient and NEGF for 3D simulation of a nanowire MOSFET AR Brown, A Martinez, N Seoane, A Asenov
2009 Spanish Conference on Electron Devices, 140-143, 2009
21 2009 