Thomas Auzelle
Thomas Auzelle
Потвърден имейл адрес: pdi-berlin.de
The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires
T Auzelle, B Haas, A Minj, C Bougerol, JL Rouvière, A Cros, J Colchero, ...
Journal of Applied Physics 117 (24), 2015
Attribution of the 3.45 eV GaN nanowires luminescence to inversion domain boundaries
T Auzelle, B Haas, M Den Hertog, JL Rouvière, B Daudin, B Gayral
Applied Physics Letters 107 (5), 2015
Assessment of polarity in GaN self-assembled nanowires by electrical force microscopy
A Minj, A Cros, N Garro, J Colchero, T Auzelle, B Daudin
Nano Letters 15 (10), 6770-6776, 2015
Lifetime measurements well below the optical diffraction limit
S Meuret, LHG Tizei, T Auzelle, R Songmuang, B Daudin, B Gayral, ...
ACS photonics 3 (7), 1157-1163, 2016
Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires
G Nogues, T Auzelle, M Den Hertog, B Gayral, B Daudin
Applied Physics Letters 104 (10), 2014
InGaN nanowires with high InN molar fraction: growth, structural and optical properties
X Zhang, H Lourenço-Martins, S Meuret, M Kociak, B Haas, JL Rouvière, ...
Nanotechnology 27 (19), 195704, 2016
Direct assessment of p–n junctions in single GaN nanowires by Kelvin probe force microscopy
A Minj, A Cros, T Auzelle, J Pernot, B Daudin
Nanotechnology 27 (38), 385202, 2016
Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation
S Fernández-Garrido, T Auzelle, J Lähnemann, K Wimmer, A Tahraoui, ...
Nanoscale Advances 1 (5), 1893-1900, 2019
European Microscopy Congress 2016: Proceedings
B Haas, R Mcleod, T Auzelle, B Daudin, J Eymery, F Lancon, JM Zou, ...
Wiley-VCH Verlag GmbH & Co. KGaA, 2016
A polarity-driven nanometric luminescence asymmetry in AlN/GaN heterostructures
LHG Tizei, S Meuret, K March, K Hestroffer, T Auzelle, B Daudin, M Kociak
Applied Physics Letters 105 (14), 2014
Towards the understanding of the intentionally induced yellow luminescence in GaN nanowires
J Rodrigues, SMC Miranda, AJS Fernandes, E Nogales, LC Alves, ...
physica status solidi c 10 (4), 667-672, 2013
Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3
G Calabrese, G Gao, D Van Treeck, P Corfdir, C Sinito, T Auzelle, ...
Nanotechnology 30 (11), 114001, 2019
Spectroscopic Analysis of Eu3+ Implanted and Annealed GaN Layers and Nanowires
J Rodrigues, MF Leitão, JFC Carreira, NB Sedrine, NF Santos, ...
The Journal of Physical Chemistry C 119 (31), 17954-17964, 2015
Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry
P Corfdir, G Calabrese, A Laha, T Auzelle, L Geelhaar, O Brandt, ...
CrystEngComm 20 (23), 3202-3206, 2018
Incorporation of europium into GaN nanowires by ion implantation
DN Faye, X Biquard, E Nogales, M Felizardo, M Peres, ...
The Journal of Physical Chemistry C 123 (18), 11874-11887, 2019
Toward quantitative measurements of piezoelectricity in III-N semiconductor nanowires
L Jaloustre, S Le Denmat, T Auzelle, M Azadmand, L Geelhaar, F Dahlem, ...
ACS Applied Nano Materials 4 (1), 43-52, 2020
Detaching (In, Ga) N nanowire films for devices requiring high flexibility and transmittance
Y Zhao, Z Xing, L Geelhaar, J Zhang, W Yang, T Auzelle, Y Wu, L Bian, ...
ACS Applied Nano Materials 3 (10), 9943-9950, 2020
Electronic properties of air-exposed GaN (11-00) and (0001) surfaces after several device processing compatible cleaning steps
T Auzelle, F Ullrich, S Hietzschold, S Brackmann, S Hillebrandt, ...
Applied Surface Science 495, 143514, 2019
Correction to “Spectroscopic Analysis of Eu3+ Implanted and Annealed GaN Layers and Nanowires”
J Rodrigues, MF Leitão, JFC Carreira, N Ben Sedrine, NF Santos, ...
The Journal of Physical Chemistry C 120 (12), 6907-6908, 2016
Tuning the orientation of the top-facets of GaN nanowires in molecular beam epitaxy by thermal decomposition
T Auzelle, G Calabrese, S Fernández-Garrido
Physical Review Materials 3 (1), 013402, 2019
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