Oliver Brandt

Получаване на мой собствен потребителски профил

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	Всички	От 2019
Позовавания	17498	3521
h-индекс	65	27
i10-индекс	284	104

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Публичен достъп

Преглед на всички

59 статии

13 статии

налични

неналични

Въз основа на изисквания при финансирането

Съавтори

Holger T. GrahnPaul-Drude-Institut für FestkörperelektronikПотвърден имейл адрес: pdi-berlin.de
Sergio Fernández-GarridoAssociate Professor in Materials Science and ERC-CoG Grantee at Universidad Politécnica de MadridПотвърден имейл адрес: upm.es
Henning RiechertDirector, Paul-Drude-Institut für FestkörperelektronikПотвърден имейл адрес: pdi-berlin.de
Jonas LähnemannWissenschaftlicher Mitarbeiter, Paul-Drude-Institut für FestkörperelektronikПотвърден имейл адрес: pdi-berlin.de
Carsten PfüllerPost Doc, Paul-Drude-InstitutПотвърден имейл адрес: pdi-berlin.de
Vladimir KaganerPaul-Drude-Institut für FestkörperelektronikПотвърден имейл адрес: pdi-berlin.de
Pierre CorfdirABB Corporate ResearchПотвърден имейл адрес: ch.abb.com
Subhabrata DharIndian Institute of Technology BombayПотвърден имейл адрес: phy.iitb.ac.in
Bernd JenichenPaul-Drude-InstitutПотвърден имейл адрес: pdi-berlin.de
YueJun SunASMLПотвърден имейл адрес: asml.com
Leander TapferENEAПотвърден имейл адрес: enea.it
Caroline ChèzeПотвърден имейл адрес: pdi-berlin.de
Dr. Christian HauswaldDeutsche Bahn AG - Digitale Schiene DeutschlandПотвърден имейл адрес: deutschebahn.com
Raffaella CalarcoCNR-IMMПотвърден имейл адрес: cnr.it
Pranob MisraMeta - Reality LabsПотвърден имейл адрес: meta.com
sabelfeldИнститут вычислительной математики и математической геофизики СОПотвърден имейл адрес: osmf.sscc.ru
Oliver MarquardtPaul-Drude-Institut fuer Festkörperelektronik BerlinПотвърден имейл адрес: pdi-berlin.de
Johannes K ZettlerLayTec AGПотвърден имейл адрес: laytec.de
Pınar DoğanAssistant Professor, Department of Electrical and Electronics Engineering, Mugla Sitki KocmanПотвърден имейл адрес: mu.edu.tr
Sandip GhoshTata Institute of Fundamental ResearchПотвърден имейл адрес: tifr.res.in

Следене

Oliver Brandt

Senior scientist, Paul-Drude-Institut für Festkörperelektronik

Потвърден имейл адрес: pdi-berlin.de - Начална страница

Semiconductor physics Materials science Nanostructures


Заглавие Сортиране по цитати Сортиране по година Сортиране по заглавие	Позовавания Позовавания	Година
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes P Waltereit, O Brandt, A Trampert, HT Grahn, J Menniger, M Ramsteiner, ... nature 406 (6798), 865-868, 2000	2184	2000
Colossal magnetic moment of Gd in GaN S Dhar, O Brandt, M Ramsteiner, VF Sapega, KH Ploog Physical Review Letters 94 (3), 037205, 2005	437	2005
Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy S Ghosh, P Waltereit, O Brandt, HT Grahn, KH Ploog Physical Review-Section B-Condensed Matter 65 (7), 75202-75202, 2002	344	2002
X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films VM Kaganer, O Brandt, A Trampert, KH Ploog Physical Review B—Condensed Matter and Materials Physics 72 (4), 045423, 2005	259	2005
Suitability of Au-and self-assisted GaAs nanowires for optoelectronic applications S Breuer, C Pfuller, T Flissikowski, O Brandt, HT Grahn, L Geelhaar, ... Nano letters 11 (3), 1276-1279, 2011	247	2011
Direct measurement of local lattice distortions in strained layer structures by HREM R Bierwolf, M Hohenstein, F Phillipp, O Brandt, GE Crook, K Ploog Ultramicroscopy 49 (1-4), 273-285, 1993	245	1993
Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H–SiC(0001) by reactive molecular-beam epitaxy S Dhar, O Brandt, A Trampert, L Daweritz, KJ Friedland, KH Ploog, ... Applied physics letters 82 (13), 2077-2079, 2003	244	2003
Surface reconstructions of zinc-blende GaN/GaAs (001) in plasma-assisted molecular-beam epitaxy O Brandt, H Yang, B Jenichen, Y Suzuki, L Däweritz, KH Ploog Physical Review B 52 (4), R2253, 1995	213	1995
Direct comparison of catalyst-free and catalyst-induced GaN nanowires C Chèze, L Geelhaar, O Brandt, WM Weber, H Riechert, S Münch, ... Nano Research 3, 528-536, 2010	206	2010
Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescence J Menniger, U Jahn, O Brandt, H Yang, K Ploog Physical Review B 53 (4), 1881, 1996	197*	1996
Impact of nucleation conditions on the structural and optical properties of M-plane GaN (1-100) grown on γ-LiAlO2 YJ Sun, O Brandt, U Jahn, TY Liu, A Trampert, S Cronenberg, S Dhar, ... Journal of applied physics 92 (10), 5714-5719, 2002	193	2002
Growth of M-plane GaN (1-100) on γ-LiAlO2(100) P Waltereit, O Brandt, M Ramsteiner, R Uecker, P Reiche, KH Ploog Journal of crystal growth 218 (2), 143-147, 2000	189	2000
High p‐type conductivity in cubic GaN/GaAs (113) A by using Be as the acceptor and O as the codopant O Brandt, H Yang, H Kostial, KH Ploog Applied physics letters 69 (18), 2707-2709, 1996	189	1996
Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K S Dhar, L Pérez, O Brandt, A Trampert, KH Ploog, J Keller, B Beschoten Physical Review B—Condensed Matter and Materials Physics 72 (24), 245203, 2005	178	2005
Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC (0001) P Waltereit, O Brandt, A Trampert, M Ramsteiner, M Reiche, M Qi, ... Applied physics letters 74 (24), 3660-3662, 1999	161	1999
Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopy M Giehler, M Ramsteiner, O Brandt, H Yang, KH Ploog Applied physics letters 67 (6), 733-735, 1995	158	1995
Luminescence associated with stacking faults in GaN J Lähnemann, U Jahn, O Brandt, T Flissikowski, P Dogan, HT Grahn Journal of Physics D: Applied Physics 47 (42), 423001, 2014	150	2014
Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments U Jahn, J Lähnemann, C Pfüller, O Brandt, S Breuer, B Jenichen, ... Physical Review B—Condensed Matter and Materials Physics 85 (4), 045323, 2012	148	2012
Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons O Brandt, C Pfüller, C Chèze, L Geelhaar, H Riechert Physical Review B—Condensed Matter and Materials Physics 81 (4), 045302, 2010	148	2010
Observation of spin-glass behavior in homogeneous (Ga, Mn) N layers grown by reactive molecular-beam epitaxy S Dhar, O Brandt, A Trampert, KJ Friedland, YJ Sun, KH Ploog Physical Review B 67 (16), 165205, 2003	145	2003

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