Oliver Brandt

Получаване на мой собствен потребителски профил

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	Всички	От 2018
Позовавания	16939	3903
h-индекс	64	29
i10-индекс	281	115

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Публичен достъп

Преглед на всички

52 статии

13 статии

налични

неналични

Въз основа на изисквания при финансирането

Съавтори

Achim TrampertPaul-Drude-InstituteПотвърден имейл адрес: pdi-berlin.de
Holger T. GrahnPaul-Drude-Institut für FestkörperelektronikПотвърден имейл адрес: pdi-berlin.de
Sergio Fernández-GarridoAssociate Professor in Materials Science and ERC-CoG Grantee at Universidad Politécnica de MadridПотвърден имейл адрес: upm.es
Henning RiechertDirector, Paul-Drude-Institut für FestkörperelektronikПотвърден имейл адрес: pdi-berlin.de
Jonas LähnemannWissenschaftlicher Mitarbeiter, Paul-Drude-Institut für FestkörperelektronikПотвърден имейл адрес: pdi-berlin.de
Carsten PfüllerPost Doc, Paul-Drude-InstitutПотвърден имейл адрес: pdi-berlin.de
Vladimir KaganerPaul-Drude-Institut für FestkörperelektronikПотвърден имейл адрес: pdi-berlin.de
Pierre CorfdirABB Corporate ResearchПотвърден имейл адрес: ch.abb.com
Subhabrata DharIndian Institute of Technology BombayПотвърден имейл адрес: phy.iitb.ac.in
Bernd JenichenPaul-Drude-InstitutПотвърден имейл адрес: pdi-berlin.de
YueJun SunASMLПотвърден имейл адрес: asml.com
Leander TapferENEAПотвърден имейл адрес: enea.it
Caroline ChèzeПотвърден имейл адрес: pdi-berlin.de
Dr. Christian HauswaldDeutsche Bahn AGПотвърден имейл адрес: deutschebahn.com
Raffaella CalarcoCNR-IMMПотвърден имейл адрес: cnr.it
Pranob MisraMeta - Reality LabsПотвърден имейл адрес: meta.com
Oliver MarquardtPaul-Drude-Institut fuer Festkörperelektronik BerlinПотвърден имейл адрес: pdi-berlin.de
sabelfeldИнститут вычислительной математики и математической геофизики СОПотвърден имейл адрес: osmf.sscc.ru
Johannes K ZettlerLayTec AGПотвърден имейл адрес: laytec.de
Pınar DoğanAssistant Professor, Department of Electrical and Electronics Engineering, Mugla Sitki KocmanПотвърден имейл адрес: mu.edu.tr

Следене

Oliver Brandt

Senior scientist, Paul-Drude-Institut für Festkörperelektronik

Потвърден имейл адрес: pdi-berlin.de - Начална страница

Semiconductor physics Materials science Nanostructures


Заглавие Сортиране по цитати Сортиране по година Сортиране по заглавие	Позовавания Позовавания	Година
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes P Waltereit, O Brandt, A Trampert, HT Grahn, J Menniger, M Ramsteiner, ... nature 406 (6798), 865-868, 2000	2148	2000
Colossal magnetic moment of Gd in GaN S Dhar, O Brandt, M Ramsteiner, VF Sapega, KH Ploog Physical Review Letters 94 (3), 037205, 2005	434	2005
Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy S Ghosh, P Waltereit, O Brandt, HT Grahn, KH Ploog Physical Review-Section B-Condensed Matter 65 (7), 75202-75202, 2002	299	2002
Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H–SiC(0001) by reactive molecular-beam epitaxy S Dhar, O Brandt, A Trampert, L Daweritz, KJ Friedland, KH Ploog, ... Applied physics letters 82 (13), 2077-2079, 2003	245	2003
X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films VM Kaganer, O Brandt, A Trampert, KH Ploog Physical Review B 72 (4), 045423, 2005	244	2005
Direct measurement of local lattice distortions in strained layer structures by HREM R Bierwolf, M Hohenstein, F Phillipp, O Brandt, GE Crook, K Ploog Ultramicroscopy 49 (1-4), 273-285, 1993	242	1993
Suitability of Au-and self-assisted GaAs nanowires for optoelectronic applications S Breuer, C Pfuller, T Flissikowski, O Brandt, HT Grahn, L Geelhaar, ... Nano letters 11 (3), 1276-1279, 2011	240	2011
Surface reconstructions of zinc-blende GaN/GaAs (001) in plasma-assisted molecular-beam epitaxy O Brandt, H Yang, B Jenichen, Y Suzuki, L Däweritz, KH Ploog Physical Review B 52 (4), R2253, 1995	213	1995
Direct comparison of catalyst-free and catalyst-induced GaN nanowires C Chèze, L Geelhaar, O Brandt, WM Weber, H Riechert, S Münch, ... Nano Research 3, 528-536, 2010	206	2010
Impact of nucleation conditions on the structural and optical properties of M-plane GaN (1-100) grown on γ-LiAlO2 YJ Sun, O Brandt, U Jahn, TY Liu, A Trampert, S Cronenberg, S Dhar, ... Journal of applied physics 92 (10), 5714-5719, 2002	193	2002
Growth of M-plane GaN (1-100) on γ-LiAlO2(100) P Waltereit, O Brandt, M Ramsteiner, R Uecker, P Reiche, KH Ploog Journal of crystal growth 218 (2), 143-147, 2000	186	2000
High p‐type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant O Brandt, H Yang, H Kostial, KH Ploog Applied physics letters 69 (18), 2707-2709, 1996	182	1996
Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K S Dhar, L Pérez, O Brandt, A Trampert, KH Ploog, J Keller, B Beschoten Physical Review B 72 (24), 245203, 2005	177	2005
Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescence J Menniger, U Jahn, O Brandt, H Yang, K Ploog Physical Review B 53 (4), 1881, 1996	168*	1996
Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC (0001) P Waltereit, O Brandt, A Trampert, M Ramsteiner, M Reiche, M Qi, ... Applied physics letters 74 (24), 3660-3662, 1999	163	1999
Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopy M Giehler, M Ramsteiner, O Brandt, H Yang, KH Ploog Applied physics letters 67 (6), 733-735, 1995	159	1995
Luminescence associated with stacking faults in GaN J Lähnemann, U Jahn, O Brandt, T Flissikowski, P Dogan, HT Grahn Journal of Physics D: Applied Physics 47 (42), 423001, 2014	147	2014
Observation of spin-glass behavior in homogeneous (Ga, Mn) N layers grown by reactive molecular-beam epitaxy S Dhar, O Brandt, A Trampert, KJ Friedland, YJ Sun, KH Ploog Physical Review B 67 (16), 165205, 2003	146	2003
Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments U Jahn, J Lähnemann, C Pfüller, O Brandt, S Breuer, B Jenichen, ... Physical Review B 85 (4), 045323, 2012	144	2012
Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons O Brandt, C Pfüller, C Chèze, L Geelhaar, H Riechert Physical Review B 81 (4), 045302, 2010	141	2010

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