Следене
Josephine Chang
Josephine Chang
Потвърден имейл адрес: ngc.com
Заглавие
Позовавания
Позовавания
Година
Progress toward development of all-printed RFID tags: materials, processes, and devices
V Subramanian, JMJ Fréchet, PC Chang, DC Huang, JB Lee, SE Molesa, ...
Proceedings of the IEEE 93 (7), 1330-1338, 2005
6682005
Hybrid CMOS Technology With Nanowire Devices and Double Gated Planar Devices
S Bangsaruntip, JB Chang, L Chang, JW Sleight
US Patent 20,130,026,451, 2013
4062013
Printed organic transistors for ultra-low-cost RFID applications
V Subramanian, PC Chang, JB Lee, SE Molesa, SK Volkman
IEEE international conference on polymers and adhesives in microelectronics …, 2004
3222004
Printed organic transistors for ultra-low-cost RFID applications
V Subramanian, PC Chang, JB Lee, SE Molesa, SK Volkman
IEEE Transactions on components and packaging technologies 28 (4), 742-747, 2005
3112005
Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm
S Bangsaruntip, A Majumdar, GM Cohen, SU Engelmann, Y Zhang, ...
2010 Symposium on VLSI Technology Digest of papers, 21-22, 2010
3032010
Finfet Parasitic Capacitance Reduction Using Air Gap
T Ando, JB Chang, SK Kanakasabapathy, P Kulkarni, TE Standaert, ...
US Patent 20,130,095,629, 2013
2942013
Organic thin film transistors from a soluble oligothiophene derivative containing thermally removable solubilizing groups
AR Murphy, JMJ Fréchet, P Chang, J Lee, V Subramanian
Journal of the American Chemical Society 126 (6), 1596-1597, 2004
2642004
Improved superconducting qubit coherence using titanium nitride
JB Chang, MR Vissers, AD Córcoles, M Sandberg, J Gao, DW Abraham, ...
Applied Physics Letters 103, 012602, 2013
2582013
Fin field effect transistor devices with self-aligned source and drain regions
JB Chang, MA Guillorn, W Haensch, KL Saenger
US Patent 7,923,337, 2011
2532011
FIN FIELD EFFECT TRANSISTOR DEVICES WITH SELF-ALIGNED SOURCE AND DRAIN REGIONS
JB Chang, M Guillorn, WE Haensch, KL Saenger
EP Patent 2,168,151, 2010
2532010
Printable polythiophene gas sensor array for low-cost electronic noses
JB Chang, V Liu, V Subramanian, K Sivula, C Luscombe, A Murphy, J Liu, ...
Journal of Applied Physics 100 (1), 2006
2342006
Fin field effect transistor devices with self-aligned source and drain regions
JB Chang, MA Guillorn, W Haensch, KL Saenger
US Patent 8,592,280, 2013
2052013
Printed electronics for low-cost electronic systems: Technology status and application development
V Subramanian, JB Chang, A de la Fuente Vornbrock, DC Huang, ...
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European, 17-24, 2008
2002008
Fin-Last Replacement Metal Gate FinFET
JB Chang, MA Guillom, WE Haensch, IBM Corporation
US Patent 20,120,313,170, 2012
188*2012
Single gate inverter nanowire mesh
J Chang, P Chang, MA Guillorn, J Sleight
US Patent 8,466,451, 0
187*
Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond
H Kawasaki, VS Basker, T Yamashita, CH Lin, Y Zhu, J Faltermeier, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
1862009
Weave patterned organic transistors on fiber for E-textiles
JB Lee, V Subramanian
IEEE Transactions on Electron Devices 52 (2), 269-275, 2005
1752005
Nanowire mesh device and method of fabricating same
SW Bedell, JB Chang, P Chang, MA Guillorn, JW Sleight
US Patent 7,893,492, 2011
1742011
Single gate inverter nanowire mesh
J Chang, P Chang, MA Guillorn, J Sleight
US Patent 8,084,308, 2011
1652011
A NANOMESH SRAM CELL
J CHANG, P CHANG, M GUILLORN, J SLEIGHT
WO Patent 2,011,015,440, 2011
1342011
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