Следене
Islam Sayed
Islam Sayed
Kyocera SLD Laser
Потвърден имейл адрес: kyocera-sldlaser.com - Начална страница
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Позовавания
Позовавания
Година
Theoretical study of metal-insulator-metal tunneling diode figures of merit
IE Hashem Sayed, NH Rafat, EA Soliman
IEEE Journal of Quantum Electronics 49 (1), 72-79, 2013
82*2013
Quantum well solar cells: principles, recent progress, and potential
I Sayed, SM Bedair
IEEE Journal of Photovoltaics 9 (2), 402-423, 2019
672019
Dipole nantennas terminated by traveling wave rectifiers for ambient thermal energy harvesting
IE Sayed Hashem, NH Rafat, EA Soliman
IEEE Transactions on Nanotechnology 13 (4), 767-778, 2014
412014
InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties
IE Hashem Sayed, CZ Carlin, BG Hagar, PC Colter, SM Bedair
Journal of Applied Physics 119 (9), 095706, 2016
312016
An improved methodology for extracting interface state density at Si3N4/GaN
W Liu, I Sayed, C Gupta, H Li, S Keller, U Mishra
Applied Physics Letters 116 (2), 2020
302020
100-period InGaAsP/InGaP superlattice solar cell with sub-bandgap quantum efficiency approaching 80%
IEH Sayed, N Jain, MA Steiner, JF Geisz, SM Bedair
Applied Physics Letters 111 (8), 2017
242017
High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface
SM Bedair, JL Harmon, CZ Carlin, IE Hashem Sayed, PC Colter
Applied Physics Letters 108 (20), 2016
212016
Strain-Balanced InGaAsP/GaInP Multiple Quantum Well Solar Cells With a Tunable Bandgap (1.65–1.82 eV)
IEH Sayed, CZ Carlin, BG Hagar, PC Colter, SM Bedair
IEEE Journal of Photovoltaics, 2016
212016
Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN
I Sayed, W Liu, S Chan, C Gupta, M Guidry, H Li, S Keller, U Mishra
Applied Physics Letters 115 (3), 032103, 2019
202019
Characterization of MOCVD-grown AlSiO gate dielectric on β-Ga2O3 (001)
ZA Jian, I Sayed, W Liu, S Mohanty, E Ahmadi
Applied Physics Letters 118 (17), 2021
172021
Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
S Mohanty, I Sayed, ZA Jian, U Mishra, E Ahmadi
Applied Physics Letters 119 (4), 2021
152021
Characterization of AlSiO dielectrics with varying silicon composition for N-polar GaN-based devices
I Sayed, W Liu, J Georgieva, A Krishna, S Keller, UK Mishra
Semiconductor Science and Technology 35 (9), 095027, 2020
152020
Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors
A Krishna, A Raj, N Hatui, I Sayed, S Keller, UK Mishra
Applied Physics Letters 117 (4), 2020
152020
Electrical properties and interface abruptness of alsio gate dielectric grown on 0001 n-polar and (0001) ga-polar gan
I Sayed, B Bonef, W Liu, S Chan, J Georgieva, JS Speck, S Keller, ...
Applied Physics Letters 115 (17), 2019
152019
Demonstration of device-quality 60% relaxed In0. 2Ga0. 8N on porous GaN pseudo-substrates grown by PAMBE
C Wurm, H Collins, N Hatui, W Li, S Pasayat, R Hamwey, K Sun, I Sayed, ...
Journal of Applied Physics 131 (1), 2022
132022
Nanocrescent antenna as a transceiver for optical communication systems
IE Sayed Hashem, NH Rafat, EA Soliman
2014 IEEE International Symposium on Electromagnetic Compatibility (EMC), 39-45, 2014
122014
Multi-junction solar cells by Intermetallic Bonding and interconnect of Dissimilar Materials: GaAs/Si
B Hagar, I Sayed, PC Colter, SM Bedair
Solar Energy Materials and Solar Cells 215, 110653, 2020
102020
A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods
W Liu, I Sayed, J Georgieva, S Chan, S Keller, UK Mishra
Journal of Applied Physics 128 (7), 2020
102020
Improved operation stability of in situ AlSiO dielectric grown on (000–1) N-polar GaN by MOCVD
I Sayed, W Liu, B Romanczyk, J Georgieva, S Chan, S Keller, UK Mishra
Applied Physics Express 13 (6), 061010, 2020
102020
Ru/N-Polar GaN Schottky Diode With Less Than 2 μA/cm² Reverse Current
W Liu, I Sayed, B Romanczyk, N Hatui, M Guidry, WJ Mitchell, S Keller, ...
IEEE Electron Device Letters 41 (10), 1468-1471, 2020
92020
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