Atomic-layer deposition of Lu2O3 G Scarel, E Bonera, C Wiemer, G Tallarida, S Spiga, M Fanciulli, ...
Applied Physics Letters 85 (4), 630-632, 2004
136 2004 Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures F Pezzoli, E Bonera, E Grilli, M Guzzi, S Sanguinetti, D Chrastina, G Isella, ...
Materials science in semiconductor processing 11 (5-6), 279-284, 2008
108 2008 Combining high resolution and tensorial analysis in Raman stress measurements of silicon E Bonera, M Fanciulli, DN Batchelder
Journal of applied physics 94 (4), 2729-2740, 2003
103 2003 Phonon strain shift coefficients in Si1− xGex alloys F Pezzoli, E Bonera, E Grilli, M Guzzi, S Sanguinetti, D Chrastina, G Isella, ...
Journal of Applied Physics 103 (9), 2008
92 2008 Energy-band diagram of metal/ G Seguini, E Bonera, S Spiga, G Scarel, M Fanciulli
Applied physics letters 85 (22), 5316-5318, 2004
70 2004 Dielectric Properties of High- E Bonera, G Scarel, M Fanciulli, P Delugas, V Fiorentini
Physical review letters 94 (2), 027602, 2005
69 2005 High-yield fabrication of entangled photon emitters for hybrid quantum networking using high-temperature droplet epitaxy F Basso Basset, S Bietti, M Reindl, L Esposito, A Fedorov, D Huber, ...
Nano letters 18 (1), 505-512, 2018
61 2018 Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures. F Isa, M Salvalaglio, YA Dasilva, M Meduňa, M Barget, A Jung, T Kreiliger, ...
Advanced materials (Deerfield Beach, Fla.) 28 (5), 884-888, 2015
47 2015 Raman spectroscopy for a micrometric and tensorial analysis of stress in silicon E Bonera, M Fanciulli, DN Batchelder
Applied Physics Letters 81 (18), 3377-3379, 2002
47 2002 Band alignment at the La2Hf2O7∕(001) Si interface G Seguini, S Spiga, E Bonera, M Fanciulli, A Reyes Huamantinco, ...
Applied physics letters 88 (20), 2006
34 2006 Raman spectroscopy of strain in subwavelength microelectronic devices E Bonera, M Fanciulli, M Mariani
Applied Physics Letters 87 (11), 2005
34 2005 Crystal defects and junction properties in the evolution of device fabrication technology I Mica, ML Polignano, G Carnevale, P Ghezzi, M Brambilla, F Cazzaniga, ...
Journal of Physics: Condensed Matter 14 (48), 13403, 2002
34 2002 Development of a combined confocal and scanning near‐field Raman microscope for deep UV laser excitation HS Sands, F Demangeot, E Bonera, S Webster, R Bennett, IP Hayward, ...
Journal of Raman Spectroscopy 33 (9), 730-739, 2002
34 2002 Raman efficiency in SiGe alloys A Picco, E Bonera, E Grilli, M Guzzi, M Giarola, G Mariotto, D Chrastina, ...
Physical Review B 82 (11), 115317, 2010
32 2010 Raman stress maps from finite-element models of silicon structures E Bonera, M Fanciulli, G Carnevale
Journal of applied physics 100 (3), 2006
32 2006 Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations E Bonera, F Pezzoli, A Picco, G Vastola, M Stoffel, E Grilli, M Guzzi, ...
Physical Review B 79 (7), 075321, 2009
31 2009 Structure evolution of atomic layer deposition grown ZrO2 films by deep-ultra-violet Raman and far-infrared spectroscopies E Bonera, G Scarel, M Fanciulli
Journal of non-crystalline solids 322 (1-3), 105-110, 2003
31 2003 High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots S Bietti, FB Basset, A Tuktamyshev, E Bonera, A Fedorov, S Sanguinetti
Scientific Reports 10 (1), 6532, 2020
30 2020 Time of flight secondary ion mass spectrometry study of silicon nanoclusters embedded in thin silicon oxide layers M Perego, S Ferrari, S Spiga, E Bonera, M Fanciulli, V Soncini
Applied physics letters 82 (1), 121-123, 2003
30 2003 Stability and universal encapsulation of epitaxial Xenes A Molle, G Faraone, A Lamperti, D Chiappe, E Cinquanta, C Martella, ...
Faraday Discussions 227, 171-183, 2021
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