Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy DB Jackrel, SR Bank, HB Yuen, MA Wistey, JS Harris, AJ Ptak, ...
Journal of Applied Physics 101 (11), 2007
248 2007 Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V G Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ...
2012 International Electron Devices Meeting, 32.6. 1-32.6. 4, 2012
188 2012 MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 J Guo, G Li, F Faria, Y Cao, R Wang, J Verma, X Gao, S Guo, E Beam, ...
IEEE Electron device letters 33 (4), 525-527, 2012
163 2012 AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 R Li, Y Lu, G Zhou, Q Liu, SD Chae, T Vasen, WS Hwang, Q Zhang, P Fay, ...
IEEE electron device letters 33 (3), 363-365, 2012
159 2012 Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned Y Lu, G Zhou, R Li, Q Liu, Q Zhang, T Vasen, SD Chae, T Kosel, M Wistey, ...
IEEE Electron Device Letters 33 (5), 655-657, 2012
131 2012 MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE RegrowthU Singisetti, MA Wistey, GJ Burek, AK Baraskar, BJ Thibeault, ...
IEEE Electron Device Letters 30 (11), 1128-1130, 2009
114 2009 Low-threshold continuous-wave 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs SR Bank, MA Wistey, LL Goddard, HB Yuen, V Lordi, JS Harris
IEEE journal of quantum electronics 40 (6), 656-664, 2004
113 2004 Recent Progress on 1.55- SR Bank, H Bae, LL Goddard, HB Yuen, MA Wistey, R Kudrawiec, ...
IEEE Journal of Quantum Electronics 43 (9), 773-785, 2007
110 2007 InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and G Zhou, Y Lu, R Li, Q Zhang, Q Liu, T Vasen, H Zhu, JM Kuo, T Kosel, ...
IEEE electron device letters 33 (6), 782-784, 2012
103 2012 The role of Sb in the MBE growth of (GaIn)(NAsSb) K Volz, V Gambin, W Ha, MA Wistey, H Yuen, S Bank, JS Harris
Journal of Crystal Growth 251 (1-4), 360-366, 2003
103 2003 GaInNAsSb for 1.3-1.6-/spl mu/m-long wavelength lasers grown by molecular beam epitaxy V Gambin, W Ha, M Wistey, H Yuen, SR Bank, SM Kim, JS Harris
IEEE Journal of selected topics in quantum electronics 8 (4), 795-800, 2002
96 2002 Ultralow resistance in situ Ohmic contacts to InGaAs/InP U Singisetti, MA Wistey, JD Zimmerman, BJ Thibeault, MJW Rodwell, ...
Applied Physics Letters 93 (18), 2008
95 2008 Long-wavelength GaInNAs (Sb) lasers on GaAs W Ha, V Gambin, S Bank, M Wistey, H Yuen, S Kim, JS Harris
IEEE journal of quantum electronics 38 (9), 1260-1267, 2002
93 2002 Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 μm W Ha, V Gambin, M Wistey, S Bank, S Kim, JS Harris
IEEE Photonics Technology Letters 14 (5), 591-593, 2002
93 2002 Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications JS Harris Jr, R Kudrawiec, HB Yuen, SR Bank, HP Bae, MA Wistey, ...
physica status solidi (b) 244 (8), 2707-2729, 2007
83 2007 Room-temperature continuous-wave 1.55 µm GaInNAsSb laser on GaAs SR Bank, HP Bae, HB Yuen, MA Wistey, LL Goddard, JS Harris Jr
Electronics Letters 42 (3), 1, 2006
79 2006 Low-threshold CW GaInNAsSb/GaAs laser at 1.49 mm SR Bank, MA Wistey, HB Yuen, LL Goddard, W Ha, JS Harris Jr
Electron. Lett 39 (20), 1445-1446, 2003
79 2003 Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs AK Baraskar, MA Wistey, V Jain, U Singisetti, G Burek, BJ Thibeault, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
74 2009 Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate G Zhou, Y Lu, R Li, Q Zhang, WS Hwang, Q Liu, T Vasen, C Chen, H Zhu, ...
IEEE Electron Device Letters 32 (11), 1516-1518, 2011
70 2011 Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy F Afroz Faria, J Guo, P Zhao, G Li, P Kumar Kandaswamy, M Wistey, ...
Applied Physics Letters 101 (3), 2012
64 2012 