Oliver Ambacher
Oliver Ambacher
Gips-Schüle-Professur für Leistungselektronik, Universität Freiburg
Verified email at inatech.uni-freiburg.de - Homepage
TitleCited byYear
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures
O Ambacher, J Smart, JR Shealy, NG Weimann, K Chu, M Murphy, ...
Journal of applied physics 85 (6), 3222-3233, 1999
26721999
Growth and applications of group III-nitrides
O Ambacher
Journal of physics D: Applied physics 31 (20), 2653, 1998
17191998
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
O Ambacher, B Foutz, J Smart, JR Shealy, NG Weimann, K Chu, ...
Journal of applied physics 87 (1), 334-344, 2000
15422000
Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures
O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ...
Journal of physics: condensed matter 14 (13), 3399, 2002
10412002
Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures
V Fiorentini, F Bernardini, O Ambacher
applied physics letters 80 (7), 1204-1206, 2002
7612002
Wireless sub-THz communication system with high data rate
S Koenig, D Lopez-Diaz, J Antes, F Boes, R Henneberger, A Leuther, ...
Nature photonics 7 (12), 977, 2013
6442013
Optical constants of epitaxial AlGaN films and their temperature dependence
D Brunner, H Angerer, E Bustarret, F Freudenberg, R Höpler, R Dimitrov, ...
Journal of applied physics 82 (10), 5090-5096, 1997
6241997
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
T Metzger, R Höpler, E Born, O Ambacher, M Stutzmann, R Stömmer, ...
Philosophical magazine A 77 (4), 1013-1025, 1998
5611998
Undoped AlGaN/GaN HEMTs for microwave power amplification
LF Eastman, V Tilak, J Smart, BM Green, EM Chumbes, R Dimitrov, H Kim, ...
IEEE Transactions on Electron Devices 48 (3), 479-485, 2001
4262001
Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral
PDC King, TD Veal, F Fuchs, CY Wang, DJ Payne, A Bourlange, H Zhang, ...
Physical Review B 79 (20), 205211, 2009
3642009
Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff
MK Kelly, RP Vaudo, VM Phanse, L Görgens, O Ambacher, M Stutzmann
Japanese journal of applied physics 38 (3A), L217, 1999
3561999
Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications
V Cimalla, J Pezoldt, O Ambacher
Journal of Physics D: Applied Physics 40 (20), 6386, 2007
3542007
Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition
O Ambacher, MS Brandt, R Dimitrov, T Metzger, M Stutzmann, RA Fischer, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
3411996
Determination of the Al mole fraction and the band gap bowing of epitaxial films
H Angerer, D Brunner, F Freudenberg, O Ambacher, M Stutzmann, ...
Applied Physics Letters 71 (11), 1504-1506, 1997
3361997
Effects of solvent and annealing on the improved performance of solar cells based on poly (3-hexylthiophene): fullerene
M Al-Ibrahim, O Ambacher, S Sensfuss, G Gobsch
Applied Physics Letters 86 (20), 201120, 2005
3342005
Sound velocity of thin films obtained by surface acoustic-wave measurements
C Deger, E Born, H Angerer, O Ambacher, M Stutzmann, J Hornsteiner, ...
Applied Physics Letters 72 (19), 2400-2402, 1998
3321998
Relation between absorption and crystallinity of poly (3-hexylthiophene)/fullerene films for plastic solar cells
U Zhokhavets, T Erb, G Gobsch, M Al-Ibrahim, O Ambacher
Chemical Physics Letters 418 (4-6), 347-350, 2006
2612006
Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films
W Rieger, T Metzger, H Angerer, R Dimitrov, O Ambacher, M Stutzmann
Applied physics letters 68 (7), 970-972, 1996
2591996
Optical process for liftoff of group III‐nitride films
MK Kelly, O Ambacher, R Dimitrov, R Handschuh, M Stutzmann
physica status solidi (a) 159 (1), R3-R4, 1997
2571997
Method of separating two layers of material from one another and electronic components produced using this process
M Kelly, O Ambacher, M Stutzmann, M Brandt, R Dimitrov, R Handschuh
US Patent 6,559,075, 2003
2522003
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