| Reliability studies of AlGaN/GaN high electron mobility transistors DJ Cheney, EA Douglas, L Liu, CF Lo, YY Xi, BP Gila, F Ren, D Horton, ... Semiconductor Science and Technology 28 (7), 074019, 2013 | 323* | 2013 |
| Review of radiation damage in GaN-based materials and devices SJ Pearton, R Deist, F Ren, L Liu, AY Polyakov, J Kim Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (5 …, 2013 | 254 | 2013 |
| Radiation Effects in GaN Materials and Devices AY Polyakov, S Pearton, P Frenzer, F Ren, L Liu, J Kim Journal of Materials Chemistry C, 2013 | 232 | 2013 |
| Materials and reliability handbook for semiconductor optical and electron devices O UEDA, SJ PEARTON | 130 | 2012 |
| Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors ED C. Schwarz, A. Yadav, M. Shatkhin, E. Flitsiyan, L APPLIED PHYSICS LETTERS 102 (6), 062102, 2013 | 78 | 2013 |
| Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure CF Lo, TS Kang, L Liu, CY Chang, SJ Pearton, II Kravchenko, O Laboutin, ... Applied Physics Letters 97 (26), 262116, 2010 | 76 | 2010 |
| Degradation Mechanisms for GaN and GaAs High Speed Transistors DJ Cheney, EA Douglas, L Liu, CF Lo, BP Gila, F Ren, SJ Pearton Materials 5 (12), 2498-2520, 2012 | 70 | 2012 |
| Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors CY Chang, EA Douglas, J Kim, L Lu, CF Lo, BH Chu, DJ Cheney, BP Gila, ... IEEE Transactions on Device and Materials reliability 11 (1), 187-193, 2011 | 63 | 2011 |
| Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors L Liu, CF Lo, Y Xi, Y Wang, F Ren, SJ Pearton, HY Kim, J Kim, RC Fitch, ... Journal of Vacuum Science & Technology B 31 (2), 022201, 2013 | 50 | 2013 |
| Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor MR Holzworth, NG Rudawski, SJ Pearton, KS Jones, L Lu, TS Kang, ... Applied Physics Letters 98 (12), 122103, 2011 | 46 | 2011 |
| AlGaN/GaN High Electron Mobility Transistor degradation under on-and off-state stress EA Douglas, CY Chang, DJ Cheney, BP Gila, CF Lo, L Lu, R Holzworth, ... Microelectronics Reliability 51 (2), 207-211, 2011 | 46 | 2011 |
| Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN, and InAlN/GaN heterojunctions AY Polyakov, NB Smirnov, AV Govorkov, EA Kozhukhova, SJ Pearton, ... Journal of Vacuum Science & Technology B 30 (6), 061207, 2012 | 45 | 2012 |
| Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors EA Douglas, CY Chang, BP Gila, MR Holzworth, KS Jones, L Liu, J Kim, ... Microelectronics Reliability 52 (1), 23-28, 2012 | 42 | 2012 |
| Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors L Liu, TS Kang, DA Cullen, L Zhou, J Kim, CY Chang, EA Douglas, S Jang, ... Journal of Vacuum Science & Technology B 29 (3), 032204, 2011 | 41 | 2011 |
| Modeling Proton Irradiation in AlGaN/GaN HEMTs: Understanding the Increase of Critical Voltage E Patrick, ME Law, L Liu, C Velez Cuervo, Y Xi, F Ren, SJ Pearton Nuclear Science, IEEE Transactions on 60 (6), 4103-4108, 2013 | 38 | 2013 |
| Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors CY Chang, T Anderson, J Hite, L Lu, CF Lo, BH Chu, DJ Cheney, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2010 | 38 | 2010 |
| Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions YS Hwang, L Liu, F Ren, A Y, SJ Pearton Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2013 | 36 | 2013 |
| Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors L Liu, C Velez Cuervo, Y Xi, F Ren, SJ Pearton, HY Kim, J Kim, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2013 | 35 | 2013 |
| Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors HY Kim, J Kim, L Liu, CF Lo, F Ren, SJ Pearton Journal of Vacuum Science & Technology B 30 (1), 012202, 2012 | 35 | 2012 |
| Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10, and 15 MeV energies HY Kim, CF Lo, L Liu, F Ren, J Kim, SJ Pearton Applied Physics Letters 100 (1), 012107, 2012 | 34 | 2012 |
Fan RenUniversity of Florida, Bell Lab, AT&TПотвърден имейл адрес: che.ufl.edu
