| Curvature and bow of bulk GaN substrates HM Foronda, AE Romanov, EC Young, CA Robertson, GE Beltz, ... Journal of Applied Physics 120 (3), 2016 | 59 | 2016 |
| Structure and properties of La-modified Na0. 5Bi0. 5TiO3 at ambient and elevated temperatures E Aksel, JS Forrester, HM Foronda, R Dittmer, D Damjanovic, JL Jones Journal of Applied Physics 112 (5), 2012 | 53 | 2012 |
| Thermally-induced loss of piezoelectricity in ferroelectric Na0. 5Bi0. 5TiO3–BaTiO3 H Foronda, M Deluca, E Aksel, JS Forrester, JL Jones Materials Letters 115, 132-135, 2014 | 49 | 2014 |
| Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC BK SaifAddin, A Almogbel, CJ Zollner, H Foronda, A Alyamani, A Albadri, ... Semiconductor Science and Technology 34 (3), 035007, 2019 | 47 | 2019 |
| Processing and properties of Na0. 5Bi0. 5TiO3 piezoelectric ceramics modified with La, Mn and Fe E Aksel, H Foronda, KA Calhoun, JL Jones, S Schaab, T Granzow Functional Materials Letters 3 (01), 45-48, 2010 | 31 | 2010 |
| Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers HM Foronda, F Wu, C Zollner, ME Alif, B Saifaddin, A Almogbel, M Iza, ... Journal of Crystal Growth 483, 134-139, 2018 | 25 | 2018 |
| Growth of highly conductive Al-rich AlGaN: Si with low group-III vacancy concentration AS Almogbel, CJ Zollner, BK Saifaddin, M Iza, J Wang, Y Yao, M Wang, ... AIP Advances 11 (9), 2021 | 23 | 2021 |
| Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy S Marcinkevičius, TK Uždavinys, HM Foronda, DA Cohen, C Weisbuch, ... | 23 | 2016 |
| Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC BK Saifaddin, M Iza, H Foronda, A Almogbel, CJ Zollner, F Wu, ... Optics Express 27 (16), A1074-A1083, 2019 | 21 | 2019 |
| Developments in AlGaN and UV-C LEDs grown on SiC B SaifAddin, CJ Zollner, A Almogbel, H Foronda, F Wu, A Albadri, ... Light-Emitting Diodes: Materials, Devices, and Applications for Solid State …, 2018 | 19 | 2018 |
| Analysis of Vegard’s law for lattice matching InxAl1− xN to GaN by metalorganic chemical vapor deposition HM Foronda, B Mazumder, EC Young, MA Laurent, Y Li, SP DenBaars, ... Journal of Crystal Growth 475, 127-135, 2017 | 15 | 2017 |
| Electrical properties of (11-22) Si: AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy HM Foronda, DA Hunter, M Pietsch, L Sulmoni, A Muhin, S Graupeter, ... Applied Physics Letters 117 (22), 2020 | 14 | 2020 |
| Reducing the grain density in semipolar (11-22) AlGaN surfaces on m-plane sapphire substrates HM Foronda, S Graupeter, F Mehnke, J Enslin, T Wernicke, M Kneissl Japanese Journal of Applied Physics 58 (SC), SC1026, 2019 | 8 | 2019 |
| Contact architectures for tunnel junction devices BP Yonkee, EC Young, JS Speck, SP DenBaars, S Nakamura US Patent 11,348,908, 2022 | 4 | 2022 |
| Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies E Farzana, HM Foronda, CM Jackson, T Razzak, Z Zhang, JS Speck, ... Journal of Applied Physics 124 (14), 2018 | 4 | 2018 |
| Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition HM Foronda, MA Laurent, B Yonkee, S Keller, SP DenBaars, JS Speck Semiconductor Science and Technology 31 (8), 085003, 2016 | 4 | 2016 |
| Step pinning and hillock formation in (Al, Ga) N films on native AlN substrates T Schulz, SH Yoo, L Lymperakis, C Richter, E Zatterin, A Lachowski, ... Journal of Applied Physics 132 (22), 2022 | 3 | 2022 |
| Field Evaporation Behavior of Ternary Compound Semiconductor InxAli-xN B Mazumder, S Broderick, K Rajan, J Peralta, H Foronda, JS Speck Microscopy and Microanalysis 23 (S1), 636-637, 2017 | 2 | 2017 |
| Phase purity and site selection with Lanthanum doping in Sodium Bismuth Titanate (Na0. 5Bi0. 5TiO3)-piezoelectric ceramic H Foronda, E Aksel, JL Jones Journal of Undergraduate Research 12 (1), 1-4, 2010 | 2 | 2010 |
| Quantification of Trace-Level Silicon Doping in AlxGa1–xN Films Using Wavelength-Dispersive X-Ray Microanalysis L Spasevski, B Buse, PR Edwards, DA Hunter, J Enslin, HM Foronda, ... Microscopy and Microanalysis 27 (4), 696-704, 2021 | 1 | 2021 |
Jim SpeckProfessor of Materials, UCSBПотвърден имейл адрес: ucsb.edu
