| Formation mechanisms of GaN nanowires grown by selective area growth homoepitaxy Z Gačević, D Gomez Sanchez, E Calleja Nano letters 15 (2), 1117-1121, 2015 | 119 | 2015 |
| Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy Ž Gačević, A Das, J Teubert, Y Kotsar, PK Kandaswamy, T Kehagias, ... Journal of Applied Physics 109 (10), 2011 | 92 | 2011 |
| A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy S Fernández-Garrido, Ž Gačević, E Calleja Applied Physics Letters 93 (19), 2008 | 64 | 2008 |
| Intraband absorption in InAs/GaAs quantum dot infrared photodetectors—effective mass versus k× p modelling N Vukmirović, Ž Gačević, Z Ikonić, D Indjin, P Harrison, V Milanović Semiconductor science and technology 21 (8), 1098, 2006 | 55 | 2006 |
| Emission of linearly polarized single photons from quantum dots contained in nonpolar, semipolar, and polar sections of pencil-like InGaN/GaN nanowires Z Gačević, M Holmes, E Chernysheva, M Müller, A Torres-Pardo, ... ACS Photonics 4 (3), 657-664, 2017 | 54 | 2017 |
| A comprehensive diagram to grow (0001) InGaN alloys by molecular beam epitaxy Ž Gačević, VJ Gómez, NG Lepetit, PEDS Rodríguez, A Bengoechea, ... Journal of crystal growth 364, 123-127, 2013 | 54 | 2013 |
| Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells AD Utrilla, DF Reyes, JM Llorens, I Artacho, T Ben, D González, Ž Gačević, ... Solar Energy Materials and Solar Cells 159, 282-289, 2017 | 36 | 2017 |
| High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy Ž Gačević, S Fernández-Garrido, JM Rebled, S Estradé, F Peiró, E Calleja Applied Physics Letters 99 (3), 2011 | 35 | 2011 |
| A top-gate GaN nanowire metal–semiconductor field effect transistor with improved channel electrostatic control Ž Gačević, D López-Romero, T Juan Mangas, E Calleja Applied Physics Letters 108 (3), 2016 | 34 | 2016 |
| Blue-to-green single photons from InGaN/GaN dot-in-a-nanowire ordered arrays E Chernysheva, Ž Gačević, N García-Lepetit, HP Van der Meulen, ... Europhysics Letters 111 (2), 24001, 2015 | 30 | 2015 |
| Optoelectronic properties of InAlN/GaN distributed Bragg reflector heterostructure examined by valence electron energy loss spectroscopy A Eljarrat, S Estradé, Ž Gačević, S Fernández-Garrido, E Calleja, ... Microscopy and Microanalysis 18 (5), 1143-1154, 2012 | 29 | 2012 |
| Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires Ž Gačević, N Vukmirović, N García-Lepetit, A Torres-Pardo, M Müller, ... Physical Review B 93 (12), 125436, 2016 | 27 | 2016 |
| Crystallographically uniform arrays of ordered (In) GaN nanocolumns Ž Gačević, A Bengoechea-Encabo, S Albert, A Torres-Pardo, ... Journal of Applied Physics 117 (3), 2015 | 27 | 2015 |
| InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy Ž Gačević, S Fernández-Garrido, D Hosseini, S Estradé, F Peiró, ... Journal of Applied Physics 108 (11), 2010 | 26 | 2010 |
| Improving optical performance of GaN nanowires grown by selective area growth homoepitaxy: Influence of substrate and nanowire dimensions P Aseev, Ž Gačević, A Torres-Pardo, JM González-Calbet, E Calleja Applied Physics Letters 108 (25), 2016 | 21 | 2016 |
| Impact of alloyed capping layers on the performance of InAs quantum dot solar cells AD Utrilla, JM Ulloa, Ž Gačević, DF Reyes, I Artacho, T Ben, D González, ... Solar Energy Materials and Solar Cells 144, 128-135, 2016 | 20 | 2016 |
| Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves S Lazić, E Chernysheva, Ž Gačević, HP Van Der Meulen, E Calleja, ... AIP Advances 5 (9), 2015 | 19 | 2015 |
| Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters S Lazić, E Chernysheva, Ž Gačević, N García-Lepetit, HP van der Meulen, ... Gallium Nitride Materials and Devices X 9363, 96-103, 2015 | 15 | 2015 |
| Q-factor of (In, Ga) N containing III-nitride microcavity grown by multiple deposition techniques Ž Gačević, G Rossbach, R Butté, F Réveret, M Glauser, J Levrat, ... Journal of Applied Physics 114 (23), 2013 | 15 | 2013 |
| Insight into high-reflectivity AlN/GaN Bragg reflectors with spontaneously formed (Al, Ga) N transient layers at the interfaces Ž Gačević, A Eljarrat, F Peiró, E Calleja Journal of Applied Physics 113 (18), 2013 | 14 | 2013 |
