Следене
zarko gacevic
zarko gacevic
Profesor Contratado Doctor, Universidad Politécnica de Madrid
Потвърден имейл адрес: isom.upm.es
Заглавие
Позовавания
Позовавания
Година
Formation mechanisms of GaN nanowires grown by selective area growth homoepitaxy
Z Gačević, D Gomez Sanchez, E Calleja
Nano letters 15 (2), 1117-1121, 2015
1152015
Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy
Ž Gačević, A Das, J Teubert, Y Kotsar, PK Kandaswamy, T Kehagias, ...
Journal of Applied Physics 109 (10), 2011
952011
A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
S Fernández-Garrido, Ž Gačević, E Calleja
Applied Physics Letters 93 (19), 2008
632008
Intraband absorption in InAs/GaAs quantum dot infrared photodetectors—effective mass versus k× p modelling
N Vukmirović, Ž Gačević, Z Ikonić, D Indjin, P Harrison, V Milanović
Semiconductor science and technology 21 (8), 1098, 2006
552006
Emission of linearly polarized single photons from quantum dots contained in nonpolar, semipolar, and polar sections of pencil-like InGaN/GaN nanowires
Z Gačević, M Holmes, E Chernysheva, M Müller, A Torres-Pardo, ...
ACS Photonics 4 (3), 657-664, 2017
532017
A comprehensive diagram to grow (0001) InGaN alloys by molecular beam epitaxy
Ž Gačević, VJ Gómez, NG Lepetit, PEDS Rodríguez, A Bengoechea, ...
Journal of crystal growth 364, 123-127, 2013
532013
High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy
Ž Gačević, S Fernández-Garrido, JM Rebled, S Estradé, F Peiró, E Calleja
Applied Physics Letters 99 (3), 2011
352011
A top-gate GaN nanowire metal–semiconductor field effect transistor with improved channel electrostatic control
Ž Gačević, D López-Romero, T Juan Mangas, E Calleja
Applied Physics Letters 108 (3), 2016
342016
Blue-to-green single photons from InGaN/GaN dot-in-a-nanowire ordered arrays
E Chernysheva, Ž Gačević, N García-Lepetit, HP Van der Meulen, ...
Europhysics Letters 111 (2), 24001, 2015
312015
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
AD Utrilla, DF Reyes, JM Llorens, I Artacho, T Ben, D González, Ž Gačević, ...
Solar Energy Materials and Solar Cells 159, 282-289, 2017
302017
Optoelectronic properties of InAlN/GaN distributed Bragg reflector heterostructure examined by valence electron energy loss spectroscopy
A Eljarrat, S Estradé, Ž Gačević, S Fernández-Garrido, E Calleja, ...
Microscopy and Microanalysis 18 (5), 1143-1154, 2012
292012
Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires
Ž Gačević, N Vukmirović, N García-Lepetit, A Torres-Pardo, M Müller, ...
Physical Review B 93 (12), 125436, 2016
282016
Crystallographically uniform arrays of ordered (In) GaN nanocolumns
Ž Gačević, A Bengoechea-Encabo, S Albert, A Torres-Pardo, ...
Journal of Applied Physics 117 (3), 2015
272015
InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy
Ž Gačević, S Fernández-Garrido, D Hosseini, S Estradé, F Peiró, ...
Journal of Applied Physics 108 (11), 2010
262010
Improving optical performance of GaN nanowires grown by selective area growth homoepitaxy: Influence of substrate and nanowire dimensions
P Aseev, Ž Gačević, A Torres-Pardo, JM González-Calbet, E Calleja
Applied Physics Letters 108 (25), 2016
212016
Impact of alloyed capping layers on the performance of InAs quantum dot solar cells
AD Utrilla, JM Ulloa, Ž Gačević, DF Reyes, I Artacho, T Ben, D González, ...
Solar Energy Materials and Solar Cells 144, 128-135, 2016
182016
Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves
S Lazić, E Chernysheva, Ž Gačević, HP Van Der Meulen, E Calleja, ...
AIP Advances 5 (9), 2015
182015
Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters
S Lazić, E Chernysheva, Ž Gačević, N García-Lepetit, HP van der Meulen, ...
Gallium Nitride Materials and Devices X 9363, 96-103, 2015
152015
Q-factor of (In, Ga) N containing III-nitride microcavity grown by multiple deposition techniques
Ž Gačević, G Rossbach, R Butté, F Réveret, M Glauser, J Levrat, ...
Journal of Applied Physics 114 (23), 2013
142013
Growth and characterization of lattice‐matched InAlN/GaN Bragg reflectors grown by plasma‐assisted molecular beam epitaxy
Ž Gačević, S Fernández‐Garrido, E Calleja, E Luna, A Trampert
physica status solidi c 6 (S2 2), S643-S645, 2009
142009
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