Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces D Leonard, M Krishnamurthy, CM Reaves, SP DenBaars, PM Petroff
Applied Physics Letters 63 (23), 3203-3205, 1993
2349 1993 Prospects for LED lighting S Pimputkar, JS Speck, SP DenBaars, S Nakamura
Nature photonics 3 (4), 180-182, 2009
2185 2009 Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening T Fujii, Y Gao, R Sharma, EL Hu, SP DenBaars, S Nakamura
Applied physics letters 84 (6), 855-857, 2004
1707 2004 Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors JP Ibbetson, PT Fini, KD Ness, SP DenBaars, JS Speck, UK Mishra
Applied Physics Letters 77 (2), 250-252, 2000
1319 2000 Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films B Heying, XH Wu, S Keller, Y Li, D Kapolnek, BP Keller, SP DenBaars, ...
Applied physics letters 68 (5), 643-645, 1996
1091 1996 Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements JF Muth, JH Lee, IK Shmagin, RM Kolbas, HC Casey Jr, BP Keller, ...
Applied Physics Letters 71 (18), 2572-2574, 1997
899 1997 “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells YH Cho, GH Gainer, AJ Fischer, JJ Song, S Keller, UK Mishra, ...
Applied Physics Letters 73 (10), 1370-1372, 1998
849 1998 Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ...
Nature materials 5 (10), 810-816, 2006
812 * 2006 Structural characterization of nonpolar a -plane GaN thin films grown on r -plane sapphire MD Craven, SH Lim, F Wu, JS Speck, SP DenBaars
Applied Physics Letters 81 (3), 469-471, 2002
656 2002 Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells XH Wu, CR Elsass, A Abare, M Mack, S Keller, PM Petroff, SP DenBaars, ...
Applied Physics Letters 72 (6), 692-694, 1998
579 1998 Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy IP Smorchkova, CR Elsass, JP Ibbetson, R Vetury, B Heying, P Fini, ...
Journal of applied physics 86 (8), 4520-4526, 1999
576 1999 AlGaN/AlN/GaN high-power microwave HEMT L Shen, S Heikman, B Moran, R Coffie, NQ Zhang, D Buttari, ...
IEEE Electron Device Letters 22 (10), 457-459, 2001
574 2001 Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2 O3 XH Wu, LM Brown, D Kapolnek, S Keller, B Keller, SP DenBaars, ...
Journal of applied physics 80 (6), 3228-3237, 1996
568 1996 High-power AlGaN/GaN HEMTs for ka-band applications T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ...
IEEE Electron device letters 26 (11), 781-783, 2005
562 2005 Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures SF Chichibu, AC Abare, MS Minsky, S Keller, SB Fleischer, JE Bowers, ...
Applied Physics Letters 73 (14), 2006-2008, 1998
561 1998 Method for fabrication of semipolar (Al, In, Ga, B) N based light emitting diodes H Sato, H Hirasawa, RB Chung, SP DenBaars, JS Speck, S Nakamura
US Patent 8,148,713, 2012
522 2012 High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates Y Dora, A Chakraborty, L Mccarthy, S Keller, SP DenBaars, UK Mishra
IEEE Electron Device Letters 27 (9), 713-715, 2006
521 2006 Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy EJ Tarsa, B Heying, XH Wu, P Fini, SP DenBaars, JS Speck
Journal of applied physics 82 (11), 5472-5479, 1997
519 1997 High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap CJ Neufeld, NG Toledo, SC Cruz, M Iza, SP DenBaars, UK Mishra
Applied Physics Letters 93 (14), 143502, 2008
518 2008 Dislocation mediated surface morphology of GaN B Heying, EJ Tarsa, CR Elsass, P Fini, SP DenBaars, JS Speck
Journal of Applied Physics 85 (9), 6470-6476, 1999
491 1999 