Следене
Ji Hye Kang
Ji Hye Kang
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik
Потвърден имейл адрес: fbh-berlin.de
Заглавие
Позовавания
Позовавания
Година
Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern
N Han, T Viet Cuong, M Han, B Deul Ryu, S Chandramohan, J Bae Park, ...
Nature communications 4 (1), 1452, 2013
2142013
Work-function-tuned multilayer graphene as current spreading electrode in blue light-emitting diodes
S Chandramohan, J Hye Kang, YS Katharria, N Han, Y Seon Beak, ...
Applied Physics Letters 100 (2), 023502, 2012
612012
Comparison of various surface textured layer in InGaN LEDs for high light extraction efficiency
JH Kang, JH Ryu, HK Kim, HY Kim, N Han, YJ Park, P Uthirakumar, ...
Optics express 19 (4), 3637-3646, 2011
492011
Impact of Interlayer Processing Conditions on the Performance of GaN Light-Emitting Diode with Specific NiOx/Graphene Electrode
S Chandramohan, JH Kang, BD Ryu, JH Yang, S Kim, H Kim, JB Park, ...
ACS Applied Materials & Interfaces 5 (3), 958-964, 2013
382013
Chemically modified multilayer graphene with metal interlayer as an efficient current spreading electrode for InGaN/GaN blue light-emitting diodes
S Chandramohan, JH Kang, YS Katharria, N Han, YS Beak, KB Ko, ...
Journal of Physics D: Applied Physics 45 (14), 145101, 2012
382012
DFB laser diodes based on GaN using 10th order laterally coupled surface gratings
JH Kang, H Wenzel, V Hoffmann, E Freier, L Sulmoni, RS Unger, ...
IEEE Photonics Technology Letters 30 (3), 231-234, 2017
332017
Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes
HG Kim, HK Kim, HY Kim, JH Ryu, JH Kang, N Han, P Uthirakumar, ...
Applied Physics Letters 95 (22), 221110, 2009
252009
Nanoscale ITO/ZnO layer-texturing for high-efficiency InGaN/GaN light emitting diodes
P Uthirakumar, JH Kang, BD Ryu, HG Kim, HK Kim, CH Hong
Materials Science and Engineering: B 166 (3), 230-234, 2010
242010
High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors
JH Ryu, HY Kim, HK Kim, YS Katharria, N Han, JH Kang, YJ Park, M Han, ...
Optics Express 20 (9), 9999-10003, 2012
222012
Synthesis and improved luminescence properties of OLED/ZnO hybrid materials
U Periyayya, JH Kang, JH Ryu, CH Hong
Vacuum 86 (3), 254-260, 2011
222011
Improvement of light output power in InGaN/GaN light-emitting diodes with a nanotextured GaN surface using indium tin oxide nanospheres
JH Kang, HG Kim, HK Kim, HY Kim, JH Ryu, P Uthirakumar, N Han, ...
Japanese Journal of Applied Physics 48 (10R), 102104, 2009
222009
The different types of ZnO materials on the performance of dye-sensitized solar cells
P Uthirakumar, JH Kang, S Senthilarasu, CH Hong
Physica E: Low-dimensional Systems and Nanostructures 43 (9), 1746-1750, 2011
192011
Enhanced light output power of GaN-based light-emitting diodes by nano-rough indium tin oxide film using ZnO nanoparticles
B Deul Ryu, P Uthirakumar, J Hye Kang, B Jun Kwon, S Chandramohan, ...
Journal of Applied Physics 109 (9), 093116, 2011
182011
Enhancement of light output power in InGaN/GaN LEDs with nanoroughed hemispherical indium tin oxide transparent ohmic contacts
JH Kang, HG Kim, JH Ryu, HK Kim, HY Kim, J Joo, MS Lee, YJ Park, ...
Electrochemical and Solid-State Letters 13 (2), D1, 2009
182009
Continuous-wave operation of DFB laser diodes based on GaN using 10th-order laterally coupled surface gratings
JH Kang, H Wenzel, E Freier, V Hoffmann, O Brox, J Fricke, L Sulmoni, ...
Optics letters 45 (4), 935-938, 2020
162020
Optically pumped DFB lasers based on GaN using 10th-order laterally coupled surface gratings
JH Kang, M Martens, H Wenzel, V Hoffmann, W John, S Einfeldt, ...
IEEE Photonics Technology Letters 29 (1), 138-141, 2016
162016
Stress-relaxed growth of n-GaN epilayers
JH Ryu, YS Katharria, HY Kim, HK Kim, KB Ko, N Han, JH Kang, YJ Park, ...
Applied Physics Letters 100 (18), 181904, 2012
162012
Enhancement of light output power in GaN-based light-emitting diodes using indium tin oxide films with nanoporous structures
JH Kang, JH Ryu, HK Kim, HY Kim, N Han, MS Lee, YJ Park, ...
Thin Solid Films 520 (1), 437-441, 2011
162011
Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes
YJ Park, HY Kim, JH Ryu, HK Kim, JH Kang, N Han, M Han, H Jeong, ...
Optics Express 19 (3), 2029-2036, 2011
152011
Stimulated N-doping of reduced graphene oxide on GaN under excimer laser reduction process
BD Ryu, N Han, M Han, S Chandramohan, YJ Park, KB Ko, JB Park, ...
Materials Letters 116, 412-415, 2014
142014
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