Yuh-Renn Wu

Получаване на мой собствен потребителски профил

Позовавания

	Всички	От 2018
Позовавания	4353	2366
h-индекс	36	24
i10-индекс	94	68

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200520062007200820092010201120122013201420152016201720182019202020212022202313 25 26 37 61 87 93 123 231 250 288 336 373 314 321 414 448 597 271

Публичен достъп

Преглед на всички

25 статии

5 статии

налични

неналични

Въз основа на изисквания при финансирането

Съавтори

Jim SpeckProfessor of Materials, UCSBПотвърден имейл адрес: ucsb.edu
Chi-Kang LiNational Taiwan UniversityПотвърден имейл адрес: ntu.edu.tw
claude weisbuchПотвърден имейл адрес: engineering.ucsb.edu
Peichen YuDepartment of Photonics, National Chiao Tung UniversityПотвърден имейл адрес: faculty.nctu.edu.tw
Hung-Hsun HuangMeta Platforms, Inc., National Taiwan UniversityПотвърден имейл адрес: ntu.edu.tw
Jian-Jang HuangNational Taiwan UniversityПотвърден имейл адрес: ntu.edu.tw
Madhusudan SinghAssociate Professor at Indian Institute of Technology, DelhiПотвърден имейл адрес: umich.edu
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraПотвърден имейл адрес: engineering.ucsb.edu
TSUNG-YIN TSAIPhD in Graduate Institute of Photonics and Optoelectronics, National Taiwan UniversityПотвърден имейл адрес: ntu.edu.tw
Marcel FilocheInstitut Langevin, ESPCIПотвърден имейл адрес: espci.psl.eu
Marco PiccardoAssistant Professor, Técnico Lisboa; Associate Researcher, Harvard UniversityПотвърден имейл адрес: g.harvard.edu
Tien-chang LuNational Yang Ming Chiao Tung UniversityПотвърден имейл адрес: nycu.edu.tw
Yuji ZhaoAssociate Professor, Electrical and Computer Engineering, Rice UniversityПотвърден имейл адрес: rice.edu
I-Chun ChengGraduate Institute of Photonics and Optoelectronics, National Taiwan UniversityПотвърден имейл адрес: ntu.edu.tw
Lucio MartinelliLaboratoire PMC - CNRS/Ecole PolytechniqueПотвърден имейл адрес: polytechnique.edu
Jacques PERETTISenior Scientist, CNRSПотвърден имейл адрес: polytechnique.edu
Robert M. FarrellAssistant Professor, ECE Department, University of Wisconsin–MadisonПотвърден имейл адрес: wisc.edu
Chia-Yen HuangNational Yang Ming Chiao Tung University, Department of PhotonicsПотвърден имейл адрес: nycu.edu.tw
Jian-Zhang ChenProfessor of Graduate Institute of Applied Mechanics, National Taiwan UniversityПотвърден имейл адрес: ntu.edu.tw
Huai-An ChinPh.D. in Electrical Engineering, Princeton UniversityПотвърден имейл адрес: princeton.edu

Следене

Yuh-Renn Wu

Professor of Electrical Engineering, National Taiwan University

Потвърден имейл адрес: ntu.edu.tw - Начална страница

Semiconductor Physics Optoelectronics Numerical Modeling Coding and developing modeling Program


Заглавие Сортиране по цитати Сортиране по година Сортиране по заглавие	Позовавания Позовавания	Година
The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020	260	2020
The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior TJ Yang, R Shivaraman, JS Speck, YR Wu Journal of Applied Physics 116 (11), 113104, 2014	155	2014
Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure YR Wu, R Shivaraman, KC Wang, JS Speck Applied Physics Letters 101 (8), 083505, 2012	136	2012
Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting YR Wu, YY Lin, HH Huang, J Singh Journal of applied physics 105 (1), 013117, 2009	132	2009
Study on the current spreading effect and light extraction enhancement of vertical GaN/InGaN LEDs CK Li, YR Wu IEEE transactions on electron devices 59 (2), 400-407, 2011	131	2011
Impact of gate metal on the performance of p-GaN/AlGaN/GaN high electron mobility transistors F Lee, LY Su, CH Wang, YR Wu, J Huang IEEE Electron Device Letters 36 (3), 232-234, 2015	124	2015
High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy ECH Kyle, SW Kaun, PG Burke, F Wu, YR Wu, JS Speck Journal of applied physics 115 (19), 193702, 2014	116	2014
Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes CK Li, M Piccardo, LS Lu, S Mayboroda, L Martinelli, J Peretti, JS Speck, ... Physical Review B 95 (14), 144206, 2017	111	2017
Strain-enhanced photoluminescence from Ge direct transition TH Cheng, KL Peng, CY Ko, CY Chen, HS Lan, YR Wu, CW Liu, ... Applied Physics Letters 96 (21), 211108, 2010	108	2010
Size-dependent strain relaxation and optical characteristics of InGaN/GaN nanorod LEDs YR Wu, C Chiu, CY Chang, P Yu, HC Kuo IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1226-1233, 2009	94	2009
Localization landscape theory of disorder in semiconductors. I. Theory and modeling M Filoche, M Piccardo, YR Wu, CK Li, C Weisbuch, S Mayboroda Physical Review B 95 (14), 144204, 2017	93	2017
Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells JR Lang, NG Young, RM Farrell, YR Wu, JS Speck Applied Physics Letters 101 (18), 181105, 2012	93	2012
Real-time observation of ripple structure formation on a diamond surface under focused ion-beam bombardment A Datta, YR Wu, YL Wang Physical Review B 63 (12), 125407, 2001	88	2001
Two dimensional electron gases in polycrystalline MgZnO/ZnO heterostructures grown by rf-sputtering process HA Chin, I Cheng, CI Huang, YR Wu, WS Lu, WL Lee, JZ Chen, KC Chiu, ... Journal of Applied Physics 108 (5), 2010	86	2010
Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers M Piccardo, CK Li, YR Wu, JS Speck, B Bonef, RM Farrell, M Filoche, ... Physical Review B 95 (14), 144205, 2017	79	2017
Characteristics of large‐scale nanohole arrays for thin‐silicon photovoltaics TG Chen, P Yu, SW Chen, FY Chang, BY Huang, YC Cheng, JC Hsiao, ... Progress in Photovoltaics: Research and Applications 22 (4), 452-461, 2014	72	2014
Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH₃ molecular beam epitaxy DA Browne, B Mazumder, YR Wu, JS Speck Journal of Applied Physics 117 (18), 185703, 2015	71	2015
Device scaling physics and channel velocities in AIGaN/GaN HFETs: Velocities and effective gate length YR Wu, M Singh, J Singh IEEE transactions on electron devices 53 (4), 588-593, 2006	68	2006
Unipolar vertical transport in GaN/AlGaN/GaN heterostructures DN Nath, ZC Yang, CY Lee, PS Park, YR Wu, S Rajan Applied Physics Letters 103 (2), 022102, 2013	63	2013
+Capacitance-voltage characteristics of heteroepitaxial structures SY Yang, Q Zhan, PL Yang, MP Cruz, YH Chu, R Ramesh, YR Wu, ... Applied physics letters 91 (2), 022909, 2007	63	2007

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