Yuh-Renn Wu
Yuh-Renn Wu
Professor of Electrical Engineering, National Taiwan University
Потвърден имейл адрес: ntu.edu.tw - Начална страница
The 2020 UV emitter roadmap
H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior
TJ Yang, R Shivaraman, JS Speck, YR Wu
Journal of Applied Physics 116 (11), 113104, 2014
Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure
YR Wu, R Shivaraman, KC Wang, JS Speck
Applied Physics Letters 101 (8), 083505, 2012
Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting
YR Wu, YY Lin, HH Huang, J Singh
Journal of applied physics 105 (1), 013117, 2009
Study on the current spreading effect and light extraction enhancement of vertical GaN/InGaN LEDs
CK Li, YR Wu
IEEE transactions on electron devices 59 (2), 400-407, 2011
Impact of gate metal on the performance of p-GaN/AlGaN/GaN high electron mobility transistors
F Lee, LY Su, CH Wang, YR Wu, J Huang
IEEE Electron Device Letters 36 (3), 232-234, 2015
High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy
ECH Kyle, SW Kaun, PG Burke, F Wu, YR Wu, JS Speck
Journal of applied physics 115 (19), 193702, 2014
Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes
CK Li, M Piccardo, LS Lu, S Mayboroda, L Martinelli, J Peretti, JS Speck, ...
Physical Review B 95 (14), 144206, 2017
Strain-enhanced photoluminescence from Ge direct transition
TH Cheng, KL Peng, CY Ko, CY Chen, HS Lan, YR Wu, CW Liu, ...
Applied Physics Letters 96 (21), 211108, 2010
Size-dependent strain relaxation and optical characteristics of InGaN/GaN nanorod LEDs
YR Wu, C Chiu, CY Chang, P Yu, HC Kuo
IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1226-1233, 2009
Localization landscape theory of disorder in semiconductors. I. Theory and modeling
M Filoche, M Piccardo, YR Wu, CK Li, C Weisbuch, S Mayboroda
Physical Review B 95 (14), 144204, 2017
Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells
JR Lang, NG Young, RM Farrell, YR Wu, JS Speck
Applied Physics Letters 101 (18), 181105, 2012
Real-time observation of ripple structure formation on a diamond surface under focused ion-beam bombardment
A Datta, YR Wu, YL Wang
Physical Review B 63 (12), 125407, 2001
Two dimensional electron gases in polycrystalline MgZnO/ZnO heterostructures grown by rf-sputtering process
HA Chin, I Cheng, CI Huang, YR Wu, WS Lu, WL Lee, JZ Chen, KC Chiu, ...
Journal of Applied Physics 108 (5), 2010
Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers
M Piccardo, CK Li, YR Wu, JS Speck, B Bonef, RM Farrell, M Filoche, ...
Physical Review B 95 (14), 144205, 2017
Characteristics of large‐scale nanohole arrays for thin‐silicon photovoltaics
TG Chen, P Yu, SW Chen, FY Chang, BY Huang, YC Cheng, JC Hsiao, ...
Progress in Photovoltaics: Research and Applications 22 (4), 452-461, 2014
Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy
DA Browne, B Mazumder, YR Wu, JS Speck
Journal of Applied Physics 117 (18), 185703, 2015
Device scaling physics and channel velocities in AIGaN/GaN HFETs: Velocities and effective gate length
YR Wu, M Singh, J Singh
IEEE transactions on electron devices 53 (4), 588-593, 2006
Unipolar vertical transport in GaN/AlGaN/GaN heterostructures
DN Nath, ZC Yang, CY Lee, PS Park, YR Wu, S Rajan
Applied Physics Letters 103 (2), 022102, 2013
+Capacitance-voltage characteristics of heteroepitaxial structures
SY Yang, Q Zhan, PL Yang, MP Cruz, YH Chu, R Ramesh, YR Wu, ...
Applied physics letters 91 (2), 022909, 2007
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