1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon M Zhu, B Song, M Qi, Z Hu, K Nomoto, X Yan, Y Cao, W Johnson, E Kohn, ...
IEEE Electron Device Letters 36 (4), 375-377, 2015
192 2015 Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V G Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ...
2012 International Electron Devices Meeting, 32.6. 1-32.6. 4, 2012
188 2012 Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN pn diodes with avalanche breakdown Z Hu, K Nomoto, B Song, M Zhu, M Qi, M Pan, X Gao, V Protasenko, ...
Applied Physics Letters 107 (24), 2015
178 2015 1.7-kV and 0.55- K Nomoto, B Song, Z Hu, M Zhu, M Qi, N Kaneda, T Mishima, T Nakamura, ...
IEEE Electron Device Letters 37 (2), 161-164, 2015
177 2015 Hot electron transistor with van der Waals base-collector heterojunction and high-performance GaN emitter A Zubair, A Nourbakhsh, JY Hong, M Qi, Y Song, D Jena, J Kong, ...
Nano letters 17 (5), 3089-3096, 2017
79 2017 1.1-kV vertical GaN pn diodes with p-GaN regrown by molecular beam epitaxy Z Hu, K Nomoto, M Qi, W Li, M Zhu, X Gao, D Jena, HG Xing
IEEE Electron Device Letters 38 (8), 1071-1074, 2017
73 2017 GaN-on-GaN pn power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2 K Nomoto, Z Hu, B Song, M Zhu, M Qi, R Yan, V Protasenko, E Imhoff, ...
2015 IEEE international electron devices meeting (IEDM), 9.7. 1-9.7. 4, 2015
70 2015 High breakdown single-crystal GaN pn diodes by molecular beam epitaxy M Qi, K Nomoto, M Zhu, Z Hu, Y Zhao, V Protasenko, B Song, X Yan, G Li, ...
Applied Physics Letters 107 (23), 2015
65 2015 Strained GaN Quantum-Well FETs on Single Crystal Bulk AlN Substrates M Qi, G Li, S Ganguly, P Zhao, X Yan, J Verma, B Song, M Zhu, K Nomoto, ...
Applied Physics Letters 110 (6), 063501, 2017
60 2017 A practical end-to-end inventory management model with deep learning M Qi, Y Shi, Y Qi, C Ma, R Yuan, D Wu, ZJ Shen
Management Science 69 (2), 759-773, 2023
54 2023 Ultralow-leakage AlGaN/GaN high electron mobility transistors on Si with non-alloyed regrown ohmic contacts B Song, M Zhu, Z Hu, M Qi, K Nomoto, X Yan, Y Cao, D Jena, HG Xing
IEEE Electron Device Letters 37 (1), 16-19, 2015
50 2015 IEDM Tech. Dig. J Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ...
IEDM Tech. Dig, 773, 2012
24 2012 Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes M Qi, G Li, V Protasenko, P Zhao, J Verma, B Song, S Ganguly, M Zhu, ...
Applied Physics Letters 106 (4), 2015
18 2015 Distributionally robust conditional quantile prediction with fixed design M Qi, Y Cao, ZJ Shen
Management Science 68 (3), 1639-1658, 2022
14 2022 Electron mobility in polarization-doped Al0-0.2 GaN with a low concentration near 1017 cm− 3 M Zhu, M Qi, K Nomoto, Z Hu, B Song, M Pan, X Gao, D Jena, HG Xing
Applied Physics Letters 110 (18), 2017
13 2017 Band Anticrossing in Dilute Germanium Carbides Using Hybrid Functionals CA Stephenson, WA O'brien, M Qi, M Penninger, W Schneider, MA Wistey
Journal of Electronic Materials April 2016, Volume 45, Issue 4, pp 2121–2126, 2014
13 * 2014 Integrated conditional estimation-optimization P Grigas, M Qi
arXiv preprint arXiv:2110.12351, 2021
11 2021 Unique opportunity to harness polarization in GaN to override the conventional power electronics figure-of-merits HG Xing, B Song, M Zhu, Z Hu, M Qi, K Nomoto, D Jena
2015 73rd Annual Device Research Conference (DRC), 51-52, 2015
10 2015 Ge quantum dots encapsulated by AlAs grown by molecular beam epitaxy on GaAs without extended defects M Qi, CA Stephenson, V Protasenko, WA O’Brien, A Mintairov, HG Xing, ...
Applied Physics Letters 104 (7), 2014
10 2014 Characteristics of In0.17 Al0.83 N/AlN/GaN MOSHEMTs with steeper than 60 mV/decade sub-threshold slopes in the deep sub-threshold region Z Hu, R Jana, M Qi, S Ganguly, B Song, E Kohn, D Jena, HG Xing
72nd Device Research Conference, 27-28, 2014
9 2014 
Huili Grace XingProf. of ECE & MSE, Cornell UniversityПотвърден имейл адрес: cornell.edu
