Следене
Paul Chang
Paul Chang
UC Berkeley, IBM
Потвърден имейл адрес: globalfoundries.com
Заглавие
Позовавания
Позовавания
Година
Progress toward development of all-printed RFID tags: materials, processes, and devices
V Subramanian, JMJ Fréchet, PC Chang, DC Huang, JB Lee, SE Molesa, ...
Proceedings of the IEEE 93 (7), 1330-1338, 2005
6682005
Printed organic transistors for ultra-low-cost RFID applications
V Subramanian, PC Chang, JB Lee, SE Molesa, SK Volkman
IEEE transactions on components and packaging technologies 28 (4), 742-747, 2005
3122005
Organic thin film transistors from a soluble oligothiophene derivative containing thermally removable solubilizing groups
AR Murphy, JMJ Fréchet, P Chang, J Lee, V Subramanian
Journal of the American Chemical Society 126 (6), 1596-1597, 2004
2642004
Methods and system for analysis and management of parametric yield
JA Culp, P Chang, D Chidambarrao, P Elakkumanan, J Hibbeler, ...
US Patent 8,042,070, 2011
2312011
Nanowire mesh device and method of fabricating same
SW Bedell, JB Chang, P Chang, MA Guillorn, JW Sleight
US Patent 7,893,492, 2011
1742011
Single gate inverter nanowire mesh
J Chang, P Chang, MA Guillorn, J Sleight
US Patent 8,084,308, 2011
1652011
Nanomesh complementary metal-oxide-semiconductor field effect transistors
JB Chang, P Chang, MA Guillorn, JW Sleight
US Patent App. 13/692,188, 2014
1282014
Nanowire mesh device and method of fabricating same
SW Bedell, JB Chang, P Chang, MA Guillorn, JW Sleight
US Patent 7,892,945, 2011
1142011
Nanomesh SRAM cell
J Chang, P Chang, MA Guillorn, J Sleight
US Patent 8,216,902, 2012
1102012
Film morphology and thin film transistor performance of solution-processed oligothiophenes
PC Chang, J Lee, D Huang, V Subramanian, AR Murphy, JMJ Fréchet
Chemistry of materials 16 (23), 4783-4789, 2004
1082004
22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
S Narasimha, P Chang, C Ortolland, D Fried, E Engbrecht, K Nummy, ...
2012 International Electron Devices Meeting, 3.3. 1-3.3. 4, 2012
1032012
Direct correlation of organic semiconductor film structure to field‐effect mobility
DM DeLongchamp, S Sambasivan, DA Fischer, EK Lin, P Chang, ...
Advanced Materials 17 (19), 2340-2344, 2005
982005
From ultrafine thiolate-capped copper nanoclusters toward copper sulfide nanodiscs: a thermally activated evolution route
D Mott, J Yin, M Engelhard, R Loukrakpam, P Chang, G Miller, IT Bae, ...
Chemistry of Materials 22 (1), 261-271, 2010
882010
Microrockets for smart dust
D Teasdale, V Milanovic, P Chang, KSJ Pister
Smart Materials and Structures 10 (6), 1145, 2001
872001
Nanowire mesh FET with multiple threshold voltages
J Chang, P Chang, MA Guillorn, J Sleight
US Patent 8,422,273, 2013
802013
Self-assembly, molecular ordering, and charge mobility in solution-processed ultrathin oligothiophene films
AR Murphy, PC Chang, P VanDyke, J Liu, JMJ Fréchet, V Subramanian, ...
Chemistry of materials 17 (24), 6033-6041, 2005
772005
All-printed RFID tags: materials, devices, and circuit implications
V Subramanian, PC Chang, D Huang, JB Lee, SE Molesa, DR Redinger, ...
19th International Conference on VLSI Design held jointly with 5th …, 2006
672006
Non-replacement gate nanomesh field effect transistor with epitixially grown source and drain
JB Chang, P Chang, I Lauer, JW Sleight
US Patent 8,778,768, 2014
632014
10-nm channel length pentacene transistors
JB Lee, PC Chang, JA Liddle, V Subramanian
IEEE transactions on electron devices 52 (8), 1874-1879, 2005
582005
Non-planar MOSFET structures with asymmetric recessed source drains and methods for making the same
JB Chang, P Chang, MA Guillorn, CH Lin, JW Sleight
US Patent 8,637,371, 2014
552014
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