| Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ... Nano letters 15 (7), 4329-4336, 2015 | 237 | 2015 |
| Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M= Mo, W; X= S, Se, Te) metal-oxide-semiconductor field effect transistors J Chang, LF Register, SK Banerjee Journal of Applied Physics 115 (8), 084506, 2014 | 112 | 2014 |
| Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M= Mo, W; X= S, Se, Te) metal-oxide-semiconductor field effect transistors J Chang, LF Register, SK Banerjee Journal of Applied Physics 115 (8), 084506, 2014 | 112 | 2014 |
| Tunnelling-based ternary metal–oxide–semiconductor technology JW Jeong, YE Choi, WS Kim, JH Park, S Kim, S Shin, K Lee, J Chang, ... Nature Electronics 2 (7), 307-312, 2019 | 111 | 2019 |
| Atomistic simulation of the electronic states of adatoms in monolayer MoS2 J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee Applied physics letters 104 (14), 141603, 2014 | 87 | 2014 |
| Atomistic simulation of the electronic states of adatoms in monolayer MoS2 J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee Applied Physics Letters 104 (14), 141603, 2014 | 87 | 2014 |
| Atomistic simulation of the electronic states of adatoms in monolayer MoS2 J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee Applied Physics Letters 104 (14), 141603, 2014 | 87 | 2014 |
| Visible and infrared dual-band imaging via Ge/MoS2 van der Waals heterostructure A Hwang, M Park, Y Park, Y Shim, S Youn, CH Lee, HB Jeong, HY Jeong, ... Science advances 7 (51), eabj2521, 2021 | 82 | 2021 |
| Atomistic full-band simulations of monolayer MoS2 transistors J Chang, LF Register, SK Banerjee Applied Physics Letters 103 (22), 223509, 2013 | 70 | 2013 |
| Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide A Valsaraj, J Chang, A Rai, LF Register, SK Banerjee 2D Materials 2 (4), 045009, 2015 | 63 | 2015 |
| Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors J Chang, LF Register, SK Banerjee Journal of Applied Physics 112 (12), 124511, 2012 | 59 | 2012 |
| Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors J Chang, LF Register, SK Banerjee Journal of Applied Physics 112 (12), 124511, 2012 | 59 | 2012 |
| Design of p‐WSe2/n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors CH Lee, Y Park, S Youn, MJ Yeom, HS Kum, J Chang, J Heo, G Yoo Advanced Functional Materials, 2107992, 2021 | 57 | 2021 |
| Theoretical study of phosphorene tunneling field effect transistors J Chang, C Hobbs Applied Physics Letters 106 (8), 083509, 2015 | 53 | 2015 |
| A 2D material-based floating gate device with linear synaptic weight update E Park, M Kim, TS Kim, IS Kim, J Park, J Kim, YJ Jeong, S Lee, I Kim, ... Nanoscale 12 (48), 24503-24509, 2020 | 47 | 2020 |
| Density functional study of ternary topological insulator thin films J Chang, LF Register, SK Banerjee, B Sahu Physical Review B 83 (23), 235108, 2011 | 45 | 2011 |
| Analytical model of short-channel double-gate JFETs J Chang, AK Kapoor, LF Register, SK Banerjee IEEE transactions on electron devices 57 (8), 1846-1855, 2010 | 45 | 2010 |
| Enhanced Piezoelectric Output Performance of the SnS2/SnS Heterostructure Thin-Film Piezoelectric Nanogenerator Realized by Atomic Layer Deposition VA Cao, M Kim, W Hu, S Lee, S Youn, J Chang, HS Chang, J Nah ACS nano, 2021 | 38 | 2021 |
| Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition T Das, E Yang, JE Seo, JH Kim, E Park, M Kim, D Seo, JY Kwak, J Chang ACS Applied Materials & Interfaces, 2021 | 38 | 2021 |
| Topological insulator-based field-effect transistor SK Banerjee, IILF Register, A MacDonald, BR Sahu, P Jadaun, J Chang US Patent 8,629,427, 2014 | 30 | 2014 |
Leonard F. RegisterProfessor of Electrical and Computer EngineeringПотвърден имейл адрес: austin.utexas.edu
