Следене
Jiwon Chang
Jiwon Chang
Потвърден имейл адрес: yonsei.ac.kr
Заглавие
Позовавания
Позовавания
Година
Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation
A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ...
Nano letters 15 (7), 4329-4336, 2015
2222015
Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M= Mo, W; X= S, Se, Te) metal-oxide-semiconductor field effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 115 (8), 084506, 2014
1012014
Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M= Mo, W; X= S, Se, Te) metal-oxide-semiconductor field effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 115 (8), 084506, 2014
1012014
Tunnelling-based ternary metal–oxide–semiconductor technology
JW Jeong, YE Choi, WS Kim, JH Park, S Kim, S Shin, K Lee, J Chang, ...
Nature Electronics 2 (7), 307-312, 2019
942019
Atomistic simulation of the electronic states of adatoms in monolayer MoS2
J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee
Applied physics letters 104 (14), 141603, 2014
892014
Atomistic simulation of the electronic states of adatoms in monolayer MoS2
J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee
Applied Physics Letters 104 (14), 141603, 2014
892014
Atomistic simulation of the electronic states of adatoms in monolayer MoS2
J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee
Applied Physics Letters 104 (14), 141603, 2014
892014
Atomistic full-band simulations of monolayer MoS2 transistors
J Chang, LF Register, SK Banerjee
Applied Physics Letters 103 (22), 223509, 2013
682013
Visible and infrared dual-band imaging via Ge/MoS2 van der Waals heterostructure
A Hwang, M Park, Y Park, Y Shim, S Youn, CH Lee, HB Jeong, HY Jeong, ...
Science advances 7 (51), eabj2521, 2021
562021
Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide
A Valsaraj, J Chang, A Rai, LF Register, SK Banerjee
2D Materials 2 (4), 045009, 2015
542015
Theoretical study of phosphorene tunneling field effect transistors
J Chang, C Hobbs
Applied Physics Letters 106 (8), 083509, 2015
512015
Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 112 (12), 124511, 2012
492012
Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 112 (12), 124511, 2012
492012
Density functional study of ternary topological insulator thin films
J Chang, LF Register, SK Banerjee, B Sahu
Physical Review B 83 (23), 235108, 2011
432011
Analytical model of short-channel double-gate JFETs
J Chang, AK Kapoor, LF Register, SK Banerjee
IEEE transactions on electron devices 57 (8), 1846-1855, 2010
412010
Design of p‐WSe2/n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors
CH Lee, Y Park, S Youn, MJ Yeom, HS Kum, J Chang, J Heo, G Yoo
Advanced Functional Materials, 2107992, 2021
382021
A 2D material-based floating gate device with linear synaptic weight update
E Park, M Kim, TS Kim, IS Kim, J Park, J Kim, YJ Jeong, S Lee, I Kim, ...
Nanoscale 12 (48), 24503-24509, 2020
362020
Enhanced Piezoelectric Output Performance of the SnS2/SnS Heterostructure Thin-Film Piezoelectric Nanogenerator Realized by Atomic Layer Deposition
VA Cao, M Kim, W Hu, S Lee, S Youn, J Chang, HS Chang, J Nah
ACS nano, 2021
302021
Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition
T Das, E Yang, JE Seo, JH Kim, E Park, M Kim, D Seo, JY Kwak, J Chang
ACS Applied Materials & Interfaces, 2021
302021
Topological insulator-based field-effect transistor
SK Banerjee, IILF Register, A MacDonald, BR Sahu, P Jadaun, J Chang
US Patent 8,629,427, 2014
282014
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Статии 1–20