The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
988 2018 1200-V normally off GaN-on-Si field-effect transistors with low dynamic on-resistance R Chu, A Corrion, M Chen, R Li, D Wong, D Zehnder, B Hughes, ...
IEEE Electron Device Letters 32 (5), 632-634, 2011
424 2011 Reverse side engineered III-nitride devices R Chu, U Mishra, RK Lal
US Patent 8,389,977, 2013
352 2013 Semiconductor heterostructure diodes Y Wu, U Mishra, P Parikh, R Chu, I Ben-Yaacov, L Shen
US Patent 7,898,004, 2011
206 2011 Semiconductor devices with field plates R Chu, R Coffie
US Patent 8,390,000, 2013
141 2013 AlGaN-GaN double-channel HEMTs R Chu, Y Zhou, J Liu, D Wang, KJ Chen, KM Lau
IEEE Transactions on electron devices 52 (4), 438-446, 2005
138 2005 High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth Y Cao, R Chu, R Li, M Chen, R Chang, B Hughes
Applied Physics Letters 108 (6), 2016
137 2016 An experimental demonstration of GaN CMOS technology R Chu, Y Cao, M Chen, R Li, D Zehnder
IEEE Electron Device Letters 37 (3), 269-271, 2016
136 2016 600 V/ R Li, Y Cao, M Chen, R Chu
IEEE Electron Device Letters 37 (11), 1466-1469, 2016
123 2016 Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition S Keller, CS Suh, Z Chen, R Chu, S Rajan, NA Fichtenbaum, M Furukawa, ...
Journal of Applied Physics 103 (3), 2008
118 2008 III-nitride devices and circuits Y Wu, R Chu
US Patent 7,884,394, 2011
103 2011 High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels G Koblmüller, RM Chu, A Raman, UK Mishra, JS Speck
Journal of Applied Physics 107 (4), 2010
81 2010 Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 W/mm at 10 GHz Y Pei, R Chu, NA Fichtenbaum, Z Chen, D Brown, L Shen, S Keller, ...
Japanese Journal of Applied Physics 46 (12L), L1087, 2007
77 2007 Impact of R Chu, CS Suh, MH Wong, N Fichtenbaum, D Brown, L McCarthy, ...
IEEE electron device letters 28 (9), 781-783, 2007
77 2007 V-gate GaN HEMTs with engineered buffer for normally off operation R Chu, Z Chen, SP DenBaars, UK Mishra
IEEE Electron Device Letters 29 (11), 1184-1186, 2008
74 2008 Plasma treatment for leakage reduction in AlGaN/GaN and GaN Schottky contacts R Chu, L Shen, N Fichtenbaum, D Brown, S Keller, UK Mishra
IEEE electron device letters 29 (4), 297-299, 2008
73 2008 Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs J Liu, Y Zhou, R Chu, Y Cai, KJ Chen, KM Lau
IEEE electron device letters 26 (3), 145-147, 2005
68 2005 GaN power electronics for automotive application KS Boutros, R Chu, B Hughes
2012 IEEE Energytech, 1-4, 2012
66 2012 Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures S Keller, CS Suh, NA Fichtenbaum, M Furukawa, R Chu, Z Chen, ...
Journal of Applied Physics 104 (9), 2008
65 2008 Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors T Roy, EX Zhang, YS Puzyrev, X Shen, DM Fleetwood, RD Schrimpf, ...
Applied Physics Letters 99 (20), 2011
56 2011 