| 85–440 K Temperature Sensor Based on a 4H-SiC Schottky Diode S Rao, L Di Benedetto, G Pangallo, A Rubino, S Bellone, FG Della Corte IEEE Sensors Journal 16 (17), 6537-6542, 2016 | 52 | 2016 |
| Improvement of infrared detection using Ge quantum dots multilayer structure M Kolahdouz, AA Farniya, L Di Benedetto, HH Radamson Applied Physics Letters 96 (21), 2010 | 41 | 2010 |
| Analytical model of the forward operation of 4H-SiC vertical DMOSFET in the safe operating temperature range GD Licciardo, S Bellone, L Di Benedetto IEEE Transactions on Power Electronics 30 (10), 5800-5809, 2014 | 39 | 2014 |
| Modeling of the SiO2/SiC Interface-Trapped Charge as a Function of the Surface Potential in 4H-SiC Vertical-DMOSFET GD Licciardo, L Di Benedetto, S Bellone IEEE Transactions on Electron Devices 63 (4), 1783-1787, 2016 | 38 | 2016 |
| Analytical model and design of 4H-SiC planar and trenched JBS diodes L Di Benedetto, GD Licciardo, T Erlbacher, AJ Bauer, S Bellone IEEE Transactions on Electron Devices 63 (6), 2474-2481, 2016 | 37 | 2016 |
| Weighted partitioning for fast multiplierless multiple-constant convolution circuit GD Licciardo, C Cappetta, L Di Benedetto, M Vigliar IEEE Transactions on Circuits and Systems II: Express Briefs 64 (1), 66-70, 2016 | 36 | 2016 |
| Multiplier-less stream processor for 2D filtering in visual search applications GD Licciardo, C Cappetta, L Di Benedetto, A Rubino, R Liguori IEEE Transactions on Circuits and Systems for Video Technology 28 (1), 267-272, 2016 | 35 | 2016 |
| An Analytical Model of the Switching Behavior of 4H-SiC p $^{\bm+} $-nn $^{\bm+} $ Diodes from Arbitrary Injection Conditions S Bellone, FG Della Corte, L Di Benedetto, GD Licciardo IEEE transactions on power electronics 27 (3), 1641-1652, 2011 | 34 | 2011 |
| A model of electric field distribution in gate oxide and JFET-region of 4H-SiC DMOSFETs L Di Benedetto, GD Licciardo, T Erlbacher, AJ Bauer, R Liguori, A Rubino IEEE Transactions on Electron Devices 63 (9), 3795-3799, 2016 | 31 | 2016 |
| Low-Power HWAccelerator for AI Edge-Computing in Human Activity Recognition Systems A De Vita, D Pau, C Parrella, L Di Benedetto, A Rubino, GD Licciardo 2020 2nd IEEE International Conference on Artificial Intelligence Circuits …, 2020 | 30 | 2020 |
| Low Power Tiny Binary Neural Network with improved accuracy in Human Recognition Systems A De Vita, D Pau, L Di Benedetto, A Rubino, F Pétrot, GD Licciardo 2020 23rd Euromicro Conference on Digital System Design (DSD), 309-315, 2020 | 26 | 2020 |
| A model of the off-behaviour of 4H–SiC power JFETs S Bellone, L Di Benedetto, GD Licciardo Solid-State Electronics 109, 17-24, 2015 | 24 | 2015 |
| Design and performances of 4H-SiC bipolar mode field effect transistor (BMFETs) S Bellone, L Di Benedetto IEEE transactions on power electronics 29 (5), 2174-2179, 2014 | 24 | 2014 |
| Optimized design for 4H-SiC power DMOSFET L Di Benedetto, GD Licciardo, T Erlbacher, AJ Bauer, A Rubino IEEE Electron Device Letters 37 (11), 1454-1457, 2016 | 23 | 2016 |
| Frame buffer-less stream processor for accurate real-time interest point detection GD Licciardo, T Boesch, D Pau, L Di Benedetto Integration 54, 10-23, 2016 | 23 | 2016 |
| A Partially Binarized Hybrid Neural Network System for Low-Power and Resource Constrained Human Activity Recognition A De Vita, A Russo, D Pau, L Di Benedetto, A Rubino, GD Licciardo IEEE Transactions on Circuits and Systems I: Regular Papers 67 (11), 3893-3904, 2020 | 22 | 2020 |
| FPGA optimization of convolution-based 2D filtering processor for image processing GD Licciardo, C Cappetta, L Di Benedetto 2016 8th Computer Science and Electronic Engineering (CEEC), 180-185, 2016 | 22 | 2016 |
| A Model of the $ I_ {\bm D}{-} V_ {{\bf GS}} $ Characteristics of Normally OFF 4H-SiC Bipolar JFETs S Bellone, L Di Benedetto IEEE transactions on power electronics 29 (1), 514-521, 2013 | 22 | 2013 |
| On the crossing-point of 4H-SiC power diodes characteristics L Di Benedetto, GD Licciardo, R Nipoti, S Bellone IEEE Electron Device Letters 35 (2), 244-246, 2013 | 21 | 2013 |
| V2O5/4H-SiC Schottky Diode Temperature Sensor: Experiments and Model L Di Benedetto, GD Licciardo, S Rao, G Pangallo, FG Della Corte, ... IEEE Transactions on Electron Devices 65 (2), 687-694, 2018 | 20 | 2018 |
Gian Domenico LicciardoDept. of Industrial Engineering-University of SalernoПотвърден имейл адрес: unisa.it
