Matthew T. Hardy

Получаване на мой собствен потребителски профил

Позовавания

	Всички	От 2018
Позовавания	3511	1699
h-индекс	26	18
i10-индекс	42	34

380

190

285

200820092010201120122013201420152016201720182019202020212022202341 77 128 144 204 259 176 236 257 276 254 294 366 321 324 139

Публичен достъп

Преглед на всички

19 статии

4 статии

налични

неналични

Въз основа на изисквания при финансирането

Съавтори

Steven DenBaarsProfessor of Materials, University of California Santa BarbaraПотвърден имейл адрес: engineering.ucsb.edu
Jim SpeckProfessor of Materials, UCSBПотвърден имейл адрес: ucsb.edu
David J. MeyerNaval Research LaboratoryПотвърден имейл адрес: nrl.navy.mil
D S KatzerUS Naval Research LaboratoryПотвърден имейл адрес: nrl.navy.mil
Neeraj NepalUS Naval Research LaboratoryПотвърден имейл адрес: nrl.navy.mil
Brian P DowneyUS Naval Research LaboratoryПотвърден имейл адрес: nrl.navy.mil
Kate M Kelchner, PhDMeta Reality LabsПотвърден имейл адрес: ece.ucsb.edu
Daniel FeezellUniversity of New MexicoПотвърден имейл адрес: unm.edu
Eric N. JinResearch Physicist at The U.S. Naval Research LaboratoryПотвърден имейл адрес: nrl.navy.mil
Chia-Yen HuangNational Yang Ming Chiao Tung University, Department of PhotonicsПотвърден имейл адрес: nycu.edu.tw
Robert M. FarrellAssistant Professor, ECE Department, University of Wisconsin–MadisonПотвърден имейл адрес: wisc.edu
Ingrid KoslowMaterials Department, University of California Santa BarbaraПотвърден имейл адрес: umail.ucsb.edu
Dan HaegerAppleПотвърден имейл адрес: apple.com
Erin C. YoungUniversity of California, Santa BarbaraПотвърден имейл адрес: engineering.ucsb.edu
Virginia WheelerNRLПотвърден имейл адрес: nrl.navy.mil
Aleksei RomanovITMO UniversityПотвърден имейл адрес: niuitmo.ru
Vikrant GokhaleUS Naval Research Laboratory | NIST | University of MichiganПотвърден имейл адрес: nrl.navy.mil
John A. RogersSimpson/Querrey Professor, Northwestern UniversityПотвърден имейл адрес: northwestern.edu
Thomas Oscar McConkieThe Design Knowlege CompanyПотвърден имейл адрес: tdkc.com
Tyler GrowdenResearch scientist, US Naval Research LaboratoryПотвърден имейл адрес: nrl.navy.mil

Следене

Matthew T. Hardy

Electronics Science and Technology Division, Naval Research Laboratory

Потвърден имейл адрес: nrl.navy.mil

millimeter wave devices epitaxial growth GaN scandium aluminum nitride


Заглавие Сортиране по цитати Сортиране по година Сортиране по заглавие	Позовавания Позовавания	Година
High-resolution electrohydrodynamic jet printing JU Park, M Hardy, SJ Kang, K Barton, K Adair, DK Mukhopadhyay, ... Nature materials 6 (10), 782-789, 2007	1512	2007
Superluminescent diodes by crystallographic etching MT Hardy, YD Lin, H Ohta, SP DenBaars, JS Speck, S Nakamura, ... US Patent App. 12/913,638, 2011	226	2011
Group III-nitride lasers: a materials perspective MT Hardy, DF Feezell, SP DenBaars, S Nakamura Materials Today 14 (9), 408-415, 2011	178	2011
AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm A Tyagi, RM Farrell, KM Kelchner, CY Huang, PS Hsu, DA Haeger, ...	121	2010
Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates MT Hardy, BP Downey, N Nepal, DF Storm, DS Katzer, DJ Meyer Applied Physics Letters 110 (16), 162104, 2017	97	2017
Blue-green InGaN/GaN laser diodes on miscut m-plane GaN substrate YD Lin, MT Hardy, PS Hsu, KM Kelchner, CY Huang, DA Haeger, ... Applied Physics Express 2 (8), 082102, 2009	81	2009
444.9 nm semipolar laser diode grown on an intentionally stress relaxed InGaN waveguiding layer P Shan Hsu, MT Hardy, F Wu, I Koslow, EC Young, AE Romanov, K Fujito, ... Applied Physics Letters 100 (2), 021104, 2012	76	2012
Performance and polarization effects in () long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers IL Koslow, MT Hardy, P Shan Hsu, PY Dang, F Wu, A Romanov, YR Wu, ... Applied Physics Letters 101 (12), 121106, 2012	62	2012
Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding KM Kelchner, YD Lin, MT Hardy, CY Huang, PS Hsu, RM Farrell, ... Applied Physics Express 2 (7), 071003, 2009	59	2009
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes MT Hardy, CO Holder, DF Feezell, S Nakamura, JS Speck, DA Cohen, ... Applied Physics Letters 103 (8), 081103, 2013	58	2013
Epitaxial lift-off and transfer of III-N materials and devices from SiC substrates DJ Meyer, BP Downey, DS Katzer, N Nepal, VD Wheeler, MT Hardy, ... IEEE Transactions on Semiconductor Manufacturing 29 (4), 384-389, 2016	51	2016
Demonstration of 505 nm laser diodes using wavelength-stable semipolar () InGaN/GaN quantum wells CY Huang, MT Hardy, K Fujito, DF Feezell, JS Speck, SP DenBaars, ... Applied Physics Letters 99 (24), 241115, 2011	51	2011
Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar GaN substrates A Pourhashemi, RM Farrell, MT Hardy, PS Hsu, KM Kelchner, JS Speck, ... Applied Physics Letters 103 (15), 151112, 2013	49	2013
Trace analysis of non-basal plane misfit stress relaxation in (20-21) and (30-3-1) semipolar InGaN/GaN heterostructures MT Hardy, PS Hsu, F Wu, IL Koslow, EC Young, S Nakamura, ... Applied Physics Letters 100 (20), 202103-202103-4, 2012	48	2012
Stress relaxation and critical thickness for misfit dislocation formation in (10-10) and (30-3-1) InGaN/GaN heteroepitaxy PS Hsu, MT Hardy, EC Young, AE Romanov, SP DenBaars, S Nakamura, ... APPLIED PHYSICS LETTERS 100, 171917, 2012	48	2012
m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching MT Hardy, KM Kelchner, YD Lin, PS Hsu, K Fujito, H Ohta, JS Speck, ... Applied Physics Express 2 (12), 121004, 2009	48	2009
Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates DS Katzer, N Nepal, DJ Meyer, BP Downey, VD Wheeler, DF Storm, ... Applied Physics Express 8 (8), 085501, 2015	45	2015
Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates DF Storm, MT Hardy, DS Katzer, N Nepal, BP Downey, DJ Meyer, ... Journal of Crystal Growth 456, 121-132, 2016	41	2016
Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy MT Hardy, EN Jin, N Nepal, DS Katzer, BP Downey, VJ Gokhale, ... Applied Physics Express 13 (6), 065509, 2020	36	2020
Observation of non-basal slip in semipolar In_xGa_1-xN/GaN heterostructures F Wu, EC Young, I Koslow, MT Hardy, PS Hsu, AE Romanov, S Nakamura, ... Applied Physics Letters 99 (25), 251909, 2011	34	2011

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