Application of advanced 200 GHz Si-Ge HBTs for high dose radiation environments KC Praveen, N Pushpa, YP Prabakara Rao, G Govindaraj, JD Cressler, ...
Solid-State Electronics 54 (12), 1554-1560, 2010
26 2010 Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs KC Praveen, N Pushpa, PS Naik, JD Cressler, A Tripathi, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2011
25 2011 In-situ Investigation of Current Transport across Pt/n-Si (100) Schottky Junction during 100 MeV Ni+ 7 Ion Irradiation S Verma, P Kumsi, T Kumar, D Kanjilal
IEEE Transactions on device material and reliability 13 (1), 98-102, 2013
20 2013 Reliability studies on NPN RF power transistors under swift heavy ion irradiation N Pushpa, KC Praveen, AP Gnana Prakash, PS Naik, JD Cressler, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2011
20 2011 An analysis of 100MeV F< sup> 8+</sup> ion and 50MeV Li< sup> 3+</sup> ion irradiation effects on silicon NPN rf power transistors N Pushpa, KC Praveen, AP Gnana Prakash, YP Prabhakara Rao, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2010
18 2010 An analysis of 100 MeV F8+ ion and 50 MeV Li3+ ion irradiation effects on silicon NPN rf power transistors N Pushpa, KC Praveen, APG Prakash, YPP Rao, A Tripati, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2010
18 2010 A Comparison of Electron, Proton and Gamma Irradiation Effects on the IV Characteristics of 200 GHz SiGe HBTs VN Hegde, TM Pradeep, N Pushpa, KC Praveen, KG Bhushan, ...
IEEE Transactions on Device and Materials Reliability 18 (4), 592-598, 2018
17 2018 A comparison of 48 MeV Li3+ ion, 100 MeV F8+ ion and Co-60 gamma irradiation effect on N-channel MOSFETs N Pushpa, KC Praveen, APG Prakash, YPP Rao, A Tripati, G Govindaraj, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2010
17 2010 A comparison of 48 MeV Li3+ ion, 100 MeV F8+ ion and Co-60 gamma irradiation effect on N-channel MOSFETs N Pushpa, KC Praveen, AP Gnana Prakash, YP Prabhakara Rao, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2010
17 2010 50 MeV Li3+ ion irradiation effects on advanced 200 GHz SiGe HBTs KC Praveen, N Pushpa, A Tripathi, D Revannasiddaiah, JD Cressler, ...
Radiation Effects and Defects in Solids 166 (8-9), 710-717, 2011
15 2011 An Analysis of 175 MeV Nickel ion irradiation and annealing effects on silicon NPN rf power transistors N Pushpa, KC Praveen, AP Prakash, SK Gupta, D Revannasiddaiah
Current Applied Physics, 2012
14 2012 An investigation of electron and oxygen ion damage in Si npn RF power transistors N Pushpa, APG Prakash, KC Praveen, JD Cressler, D Revannasiddaiah
Radiation Effects & Defects in Solids 164 (10), 592-603, 2009
14 2009 Recovery of Electrical Characteristics of Au/n-Si Schottky Junction Under S Verma, KC Praveen, A Bobby, D Kanjilal
IEEE Transactions on Device and Materials Reliability 14 (2), 721-725, 2014
13 2014 Comparison of 1 MeV electron, Co-60 gamma and 1 MeV proton irradiation effects on silicon NPN transistors MN Bharathi, VN Hegde, A Anjum, TM Pradeep, N Pushpa, KC Praveen, ...
Radiation Effects and Defects in Solids 172 (3-4), 235-249, 2017
9 2017 A comparison of 100 MeV oxygen ion and 60Co gamma irradiation effects on advanced 200 GHz SiGe heterojunction bipolar transistors NH Vinayakprasanna, KC Praveen, N Pushpa, JD Cressler, APG Prakash
Indian Journal of Physics 89 (8), 789-796, 2015
8 2015 High energy swift heavy ion irradiation and annealing effects on DC electrical characteristics of 200 GHz SiGe HBTs VN Hegde, KC Praveen, TM Pradeep, N Pushpa, JD Cressler, A Tripathi, ...
Nuclear Engineering and Technology 51 (5), 1428-1435, 2019
7 2019 80 MeV carbon ion irradiation effects on advanced 200 GHz silicon-germanium heterojunction bipolar transitors NH Vinayakprasanna, KC Praveen, N Pushpa, A Tripathi, JD Cressler, ...
Advanced Materials Letters 6 (2), 120-126, 2015
7 2015 Novel methods to reduce leakage current in Si PIN photodiodes designed and fabricated with different dielectrics YPP Rao, KC Praveen, YR Rani, APG Prakash
Indian Journal of Pure & Applied Physics 52, 637-644, 2014
7 2014 In situ investigation of 75 MeV boron and 100 MeV oxygen ion irradiation effects on 50 GHz silicon–germanium heterojunction bipolar transistors KC Praveen, N Pushpa, PS Naik, JD Cressler, HB Shiva, S Verma, ...
Radiation Effects and Defects in Solids 168 (7-8), 620-624, 2013
6 2013 In-Situ P Sana, S Verma, KC Praveen, MM Malik
IEEE Journal of Quantum Electronics 49 (9), 770-776, 2013
5 2013 
Prof. A. P. Gnana PrakashMangalore University, NDHU, Taiwan, Georgia Tech, USA, University of MysoreПотвърден имейл адрес: physics.uni-mysore.ac.in
