High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap CJ Neufeld, NG Toledo, SC Cruz, M Iza, SP DenBaars, UK Mishra
Applied Physics Letters 93 (14), 143502, 2008
518 2008 Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays SP DenBaars, D Feezell, K Kelchner, S Pimputkar, CC Pan, CC Yen, ...
Acta Materialia 61 (3), 945-951, 2013
436 2013 Method for improved growth of semipolar (Al, In, Ga, B) N JF Kaeding, DS Lee, M Iza, TJ Baker, H Sato, BA Haskell, JS Speck, ...
US Patent 7,691,658, 2010
289 2010 High internal and external quantum efficiency InGaN/GaN solar cells E Matioli, C Neufeld, M Iza, SC Cruz, AA Al-Heji, X Chen, RM Farrell, ...
Applied Physics Letters 98 (2), 021102, 2011
249 2011 Measurement of electron overflow in 450 nm InGaN light-emitting diode structures KJ Vampola, M Iza, S Keller, SP DenBaars, S Nakamura
Applied Physics Letters 94 (6), 061116, 2009
236 2009 Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes K McGroddy, A David, E Matioli, M Iza, S Nakamura, S DenBaars, ...
Applied physics letters 93 (10), 103502, 2008
192 2008 High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm RM Farrell, CJ Neufeld, SC Cruz, JR Lang, M Iza, S Keller, S Nakamura, ...
Applied Physics Letters 98 (20), 201107, 2011
151 2011 Method for deposition of magnesium doped (Al, In, Ga, B) N layers M Iza, H Sato, SP DenBaars, S Nakamura
US Patent 7,709,284, 2010
137 2010 High brightness violet InGaN/GaN light emitting diodes on semipolar (1011) bulk GaN substrates A Tyagi, H Zhong, NN Fellows, M Iza, JS Speck, SP DenBaars, ...
Japanese Journal of Applied Physics 46 (2L), L129, 2007
124 2007 High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals E Matioli, E Rangel, M Iza, B Fleury, N Pfaff, J Speck, E Hu, C Weisbuch
Applied physics letters 96 (3), 031108, 2010
122 2010 Method for conductivity control of (Al, In, Ga, B) N JF Kaeding, H Sato, M Iza, H Asamizu, H Zhong, SP DenBaars, ...
US Patent 8,193,079, 2012
93 2012 Effect of doping and polarization on carrier collection in InGaN quantum well solar cells CJ Neufeld, SC Cruz, RM Farrell, M Iza, JR Lang, S Keller, S Nakamura, ...
Applied Physics Letters 98 (24), 243507, 2011
89 2011 High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates NG Young, RM Farrell, YL Hu, Y Terao, M Iza, S Keller, SP DenBaars, ...
Applied Physics Letters 103 (17), 173903, 2013
87 2013 High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration NG Young, EE Perl, RM Farrell, M Iza, S Keller, JE Bowers, S Nakamura, ...
Applied Physics Letters 104 (16), 163902, 2014
82 2014 AlGaN deep-ultraviolet light-emitting diodes grown on SiC substrates BK SaifAddin, AS Almogbel, CJ Zollner, F Wu, B Bonef, M Iza, ...
ACS Photonics 7 (3), 554-561, 2020
70 2020 Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells YL Hu, RM Farrell, CJ Neufeld, M Iza, SC Cruz, N Pfaff, D Simeonov, ...
Applied Physics Letters 100 (16), 161101, 2012
61 2012 Light-polarization characteristics of electroluminescence from H Masui, TJ Baker, M Iza, H Zhong, S Nakamura, SP DenBaars
Journal of applied physics 100 (11), 113109, 2006
60 2006 Cone‐shaped surface GaN‐based light‐emitting diodes T Fujii, A David, Y Gao, M Iza, SP DenBaars, EL Hu, C Weisbuch, ...
physica status solidi (c) 2 (7), 2836-2840, 2005
49 2005 Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC BK SaifAddin, A Almogbel, CJ Zollner, H Foronda, A Alyamani, A Albadri, ...
Semiconductor Science and Technology 34 (3), 035007, 2019
44 2019 Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency X Huang, H Fu, H Chen, X Zhang, Z Lu, J Montes, M Iza, SP DenBaars, ...
Applied Physics Letters 110 (16), 161105, 2017
43 2017 