Следене
jing wan
jing wan
Fudan University (M.S) --> IMEP-LAHC (Ph.D.) --> Globalfoundries (Sr. Eng.)->Fudan University(Prof.)
Няма потвърден имейл адрес
Заглавие
Позовавания
Позовавания
Година
A compact capacitor-less high-speed DRAM using field effect-controlled charge regeneration
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
IEEE Electron Device Letters 33 (2), 179-181, 2011
1412011
A review of sharp-switching devices for ultra-low power applications
S Cristoloveanu, J Wan, A Zaslavsky
IEEE Journal of the Electron Devices Society 4 (5), 215-226, 2016
1362016
Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
Solid-State Electronics 65, 226-233, 2011
1332011
A tunneling field effect transistor model combining interband tunneling with channel transport
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
Journal of Applied Physics 110 (10), 2011
1032011
The effect of pre-annealing of sputtered ZnO seed layers on growth of ZnO nanorods through a hydrothermal method
SY Liu, T Chen, J Wan, GP Ru, BZ Li, XP Qu
Applied Physics A 94, 775-780, 2009
842009
A systematic study of the sharp-switching Z2-FET device: From mechanism to modeling and compact memory applications
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
Solid-State Electronics 90, 2-11, 2013
782013
A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection
J Wan, S Cristoloveanu, C Le Royer, A Zaslavsky
Solid-State Electronics 76, 109-111, 2012
772012
Progress in Z2-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storage
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
Solid-State Electronics 84, 147-154, 2013
762013
A Dual‐Gate MoS2 Photodetector Based on Interface Coupling Effect
F Liao, J Deng, X Chen, Y Wang, X Zhang, J Liu, H Zhu, L Chen, Q Sun, ...
Small 16 (1), 1904369, 2020
742020
An in-memory computing architecture based on two-dimensional semiconductors for multiply-accumulate operations
Y Wang, H Tang, Y Xie, X Chen, S Ma, Z Sun, Q Sun, L Chen, H Zhu, ...
Nature communications 12 (1), 3347, 2021
582021
A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters
S Cristoloveanu, KH Lee, MS Parihar, H El Dirani, J Lacord, S Martinie, ...
Solid-State Electronics 143, 10-19, 2018
562018
Z2-FET: A promising FDSOI device for ESD protection
Y Solaro, J Wan, P Fonteneau, C Fenouillet-Beranger, C Le Royer, ...
Solid-state electronics 97, 23-29, 2014
532014
Low-frequency noise behavior of tunneling field effect transistors
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
Applied Physics Letters 97 (24), 2010
532010
Silicon nanowire sensor for gas detection fabricated by nanoimprint on SU8/SiO2/PMMA trilayer
J Wan, SR Deng, R Yang, Z Shu, BR Lu, SQ Xie, Y Chen, E Huq, R Liu, ...
Microelectronic Engineering 86 (4-6), 1238-1242, 2009
532009
Wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning
X Chen, Y Xie, Y Sheng, H Tang, Z Wang, Y Wang, Y Wang, F Liao, J Ma, ...
Nature Communications 12 (1), 5953, 2021
522021
Precise extraction of charge carrier mobility for organic transistors
Y Xu, Y Li, S Li, F Balestra, G Ghibaudo, W Li, YF Lin, H Sun, J Wan, ...
Advanced Functional Materials 30 (20), 1904508, 2020
502020
Methods of forming nanowire devices with doped extension regions and the resulting devices
SM Koh, G Bouche, J Wan, AC Wei
US Patent 9,490,340, 2016
502016
Facilitating fabricating gate-all-around nanowire field-effect transistors
JP Liu, J Wan, A Wei
US Patent 9,263,520, 2016
442016
Self-aligned gate contact formation
G Bouche, ACH Wei, GP Wells, AP Labonte, J Wan
US Patent 9,640,625, 2017
432017
Metal gate structure and method of formation
ACH Wei, DG Yang, M Hariharaputhiran, J Wan
US Patent 9,608,086, 2017
392017
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Статии 1–20