Следене
Joachim Sestoft
Joachim Sestoft
PhD Candidate, Niels Bohr Institute, University of Copenhagen
Потвърден имейл адрес: nbi.ku.dk
Заглавие
Позовавания
Позовавания
Година
Selectivity map for molecular beam epitaxy of advanced III–V quantum nanowire networks
P Aseev, A Fursina, F Boekhout, F Krizek, JE Sestoft, F Borsoi, S Heedt, ...
Nano letters 19 (1), 218-227, 2018
1032018
Selective-area-grown semiconductor-superconductor hybrids: A basis for topological networks
S Vaitiekėnas, AM Whiticar, MT Deng, F Krizek, JE Sestoft, CJ Palmstrøm, ...
Physical review letters 121 (14), 147701, 2018
1002018
Field effect enhancement in buffered quantum nanowire networks
F Krizek, JE Sestoft, P Aseev, S Marti-Sanchez, S Vaitiekėnas, L Casparis, ...
Physical review materials 2 (9), 093401, 2018
922018
Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection
JE Sestoft, T Kanne, AN Gejl, M von Soosten, JS Yodh, D Sherman, ...
Physical Review Materials 2 (4), 044202, 2018
722018
Epitaxial Pb on InAs nanowires for quantum devices
T Kanne, M Marnauza, D Olsteins, DJ Carrad, JE Sestoft, J De Bruijckere, ...
Nature Nanotechnology 16 (7), 776-781, 2021
652021
Highly transparent gatable superconducting shadow junctions
SA Khan, C Lampadaris, A Cui, L Stampfer, Y Liu, SJ Pauka, ME Cachaza, ...
ACS nano 14 (11), 14605-14615, 2020
342020
Ag-catalyzed InAs nanowires grown on transferable graphite flakes
J Meyer-Holdt, T Kanne, JE Sestoft, A Gejl, L Zeng, E Johnson, E Olsson, ...
Nanotechnology 27 (36), 365603, 2016
152016
Scalable Platform for Nanocrystal‐Based Quantum Electronics
JE Sestoft, AN Gejl, T Kanne, RD Schlosser, D Ross, D Kjær, ...
Advanced Functional Materials 32 (28), 2112941, 2022
12022
Spin-orbit Interaction and Landé G-factors in InAsSb Nanowires: Towards Topological Phase Transitions
JE Sestoft
Niels Bohr Institute, Copenhagen University, 2017
2017
I n A s1‐x S bx/A l core‐shell nanowire epitaxy
T Kanne, A Gejl, J Sestoft, E Johnson, S Simonsen, J Nygård, P Krogstrup
European Microscopy Congress 2016: Proceedings, 526-527, 2016
2016
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Статии 1–10