Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field Z Xia, H Chandrasekar, W Moore, C Wang, AJ Lee, J McGlone, ...
Applied Physics Letters 115 (25), 2019
129 2019 Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2 O3 Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, Z Chen, JF McGlone, ...
physica status solidi (RRL)–Rapid Research Letters 14 (8), 2000145, 2020
102 2020 High electron density β-(Al0. 17Ga0. 83) 2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer NK Kalarickal, Z Xia, JF McGlone, Y Liu, W Moore, AR Arehart, SA Ringel, ...
Journal of Applied Physics 127 (21), 2020
85 2020 β-(Al0.18 Ga0.82 )2 O3 /Ga2 O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm NK Kalarickal, Z Xia, HL Huang, W Moore, Y Liu, M Brenner, J Hwang, ...
IEEE Electron Device Letters 42 (6), 899-902, 2021
79 2021 Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3 NK Kalarickal, Z Xia, J McGlone, S Krishnamoorthy, W Moore, M Brenner, ...
Applied Physics Letters 115 (15), 2019
58 2019 Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors NK Kalarickal, Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, JF McGlone, ...
IEEE Transactions on Electron Devices 68 (1), 29-35, 2020
57 2020 High-permittivity dielectric edge termination for vertical high voltage devices HS Lee, NK Kalarickal, MW Rahman, Z Xia, W Moore, C Wang, S Rajan
Journal of Computational Electronics 19, 1538-1545, 2020
14 2020 Characterization of flexible pH micro-sensors based on electrodeposited IrOx thin film P Marsh, W Moore, M Clucas, L Huynh, KT Kim, S Yi, H Cao, JC Chiao
2017 IEEE SENSORS, 1-3, 2017
12 2017 Metal/BaTiO Z Xia, H Chandrasekar, W Moore, C Wang, AJ Lee, J McGlone
Appl. Phys. Lett 115 (25), 2019
10 2019 High electron density NK Kalarickal, Z Xia, JF McGlone, Y Liu, W Moore, AR Arehart
J. Appl. Phys 127 (21), 2020
6 2020 Aktuelle Technik und Anwendung der perkutanen Kryotherapie A Mahnken, A König, J Figiel
RöFo-Fortschritte auf dem Gebiet der Röntgenstrahlen und der bildgebenden …, 2018
1 2018 Dielectric heterojunction device S Rajan, Z Xia, W Moore
US Patent 11,476,340, 2022
2022 Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors N Kurian Kalarickal, Z Feng, AFM Anhar Uddin Bhuiyan, Z Xia, ...
arXiv e-prints, arXiv: 2006.02349, 2020
2020 High electron density modulation doping using ultra-thin (1 nm) spacer layer N Kurian Kalarickal, Z Xia, J Mcglone, Y Liu, W Moore, A Arehart, S Ringel, ...
arXiv e-prints, arXiv: 1910.11521, 2019
2019 Mechanism of Si doping in Plasma Assisted MBE Growth of\b {eta}-Ga2O3 N Kurian Kalarickal, Z Xia, J McGlone, S Krishnamoorthy, W Moore, ...
arXiv e-prints, arXiv: 1908.01101, 2019
2019 PLEASE CITE THIS ARTICLE AS DOI: 10.1063/1.5123149 NK Kalarickal, Z Xia, J McGlone, S Krishnamoorthy, W Moore, M Brenner, ...
High electron density 𝜷-(Al0. 17Ga0. 83) 2O3/Ga2O3 modulation doping using ultra-thin (1 nm) spacer layer NK Kalarickal, Z Xia, J Mcglone, Y Liu, W Moore, AR Arehart, SA Ringel, ...
High electron density 𝜷𝜷-(Al0. 18Ga0. 82) 2O3/Ga2O3 modulation doping using ultra-thin (1 nm) spacer layer NK Kalarickal, Z Xia, J Mcglone, Y Liu, W Moore, A Arehart, S Ringel, ...