Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film M Wolz, C Hauswald, T Flissikowski, T Gotschke, S Fernández-Garrido, ...
Nano letters 15 (6), 3743-3747, 2015
89 2015 Current path in light emitting diodes based on nanowire ensembles F Limbach, C Hauswald, J Lähnemann, M Wölz, O Brandt, A Trampert, ...
Nanotechnology 23 (46), 465301, 2012
73 2012 Photoelectrochemical properties of (In, Ga) N nanowires for water splitting investigated by in situ electrochemical mass spectroscopy J Kamimura, P Bogdanoff, J Lähnemann, C Hauswald, L Geelhaar, ...
Journal of the American Chemical Society 135 (28), 10242-10245, 2013
72 2013 Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence S Fernández-Garrido, VM Kaganer, C Hauswald, B Jenichen, ...
Nanotechnology 25 (45), 455702, 2014
58 2014 Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency P Corfdir, C Hauswald, JK Zettler, T Flissikowski, J Lähnemann, ...
Physical Review B 90 (19), 195309, 2014
57 2014 Control over the number density and diameter of GaAs nanowires on Si (111) mediated by droplet epitaxy C Somaschini, S Bietti, A Trampert, U Jahn, C Hauswald, H Riechert, ...
Nano letters 13 (8), 3607-3613, 2013
57 2013 Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature JK Zettler, P Corfdir, C Hauswald, E Luna, U Jahn, T Flissikowski, ...
Nano letters 16 (2), 973-980, 2016
50 2016 Origin of the nonradiative decay of bound excitons in GaN nanowires C Hauswald, P Corfdir, JK Zettler, VM Kaganer, KK Sabelfeld, ...
Physical Review B 90 (16), 165304, 2014
44 2014 High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN JK Zettler, C Hauswald, P Corfdir, M Musolino, L Geelhaar, H Riechert, ...
Crystal Growth & Design 15 (8), 4104-4109, 2015
39 2015 Luminous Efficiency of Axial Inx 1–x N/GaN Nanowire Heterostructures: Interplay of Polarization and Surface Potentials O Marquardt, C Hauswald, M Wölz, L Geelhaar, O Brandt
Nano letters 13 (7), 3298-3304, 2013
39 2013 Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field ionization of donors P Corfdir, JK Zettler, C Hauswald, S Fernández-Garrido, O Brandt, ...
Physical Review B 90 (20), 205301, 2014
34 2014 Correlation between In content and emission wavelength of InxGa1− xN/GaN nanowire heterostructures M Wölz, J Lähnemann, O Brandt, VM Kaganer, M Ramsteiner, C Pfüller, ...
Nanotechnology 23 (45), 455203, 2012
34 2012 Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires C Hauswald, T Flissikowski, T Gotschke, R Calarco, L Geelhaar, ...
Physical Review B—Condensed Matter and Materials Physics 88 (7), 075312, 2013
31 2013 Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films VM Kaganer, B Jenichen, M Ramsteiner, U Jahn, C Hauswald, F Grosse, ...
Journal of Physics D: Applied Physics 48 (38), 385105, 2015
26 2015 Luminous efficiency of ordered arrays of GaN nanowires with subwavelength diameters C Hauswald, I Giuntoni, T Flissikowski, T Gotschke, R Calarco, HT Grahn, ...
ACS Photonics 4 (1), 52-62, 2017
23 2017 Localization and defects in axial (In, Ga) N/GaN nanowire heterostructures investigated by spatially resolved luminescence spectroscopy J Lähnemann, C Hauswald, M Wölz, U Jahn, M Hanke, L Geelhaar, ...
Journal of Physics D: Applied Physics 47 (39), 394010, 2014
22 2014 Investigation on the origin of luminescence quenching in N-polar (In, Ga) N multiple quantum wells C Cheze, M Siekacz, G Muzioł, H Turski, S Grzanka, M Kryśko, JL Weyher, ...
Journal of Vacuum Science & Technology B 31 (3), 2013
22 2013 Comparison of the Luminous Efficiencies of Ga- and N-Polar S Fernández-Garrido, J Lähnemann, C Hauswald, M Korytov, M Albrecht, ...
Physical Review Applied 6 (3), 034017, 2016
19 2016 Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si (111) C Pfüller, P Corfdir, C Hauswald, T Flissikowski, X Kong, JK Zettler, ...
Physical Review B 94 (15), 155308, 2016
16 2016 Indium incorporation in inx Ga1-x N/GaN nanowire heterostructures investigated by line-of-sight quadrupole mass spectrometry M Wölz, S Fernández-Garrido, C Hauswald, O Brandt, F Limbach, ...
Crystal Growth and Design 12 (11), 5686-5692, 2012
15 2012 
Oliver BrandtSenior scientist, Paul-Drude-Institut für FestkörperelektronikПотвърден имейл адрес: pdi-berlin.de
