Следене
Chih-Cheng Shih
Chih-Cheng Shih
國立中山大學材料與光電科學研究所 博士
Потвърден имейл адрес: student.nsysu.edu.tw
Заглавие
Позовавания
Позовавания
Година
Physical and chemical mechanisms in oxide-based resistance random access memory
KC Chang, TC Chang, TM Tsai, R Zhang, YC Hung, YE Syu, YF Chang, ...
Nanoscale research letters 10 (1), 1-27, 2015
1412015
Origin of hopping conduction in graphene-oxide-doped silicon oxide resistance random access memory devices
KC Chang, R Zhang, TC Chang, TM Tsai, JC Lou, JH Chen, TF Young, ...
IEEE electron device letters 34 (5), 677-679, 2013
612013
Characteristics of hafnium oxide resistance random access memory with different setting compliance current
YT Su, KC Chang, TC Chang, TM Tsai, R Zhang, JC Lou, JH Chen, ...
Applied Physics Letters 103 (16), 163502, 2013
482013
Performance and characteristics of double layer porous silicon oxide resistance random access memory
TM Tsai, KC Chang, R Zhang, TC Chang, JC Lou, JH Chen, TF Young, ...
Applied Physics Letters 102 (25), 253509, 2013
472013
Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment
KC Chang, CH Pan, TC Chang, TM Tsai, R Zhang, JC Lou, TF Young, ...
IEEE electron device letters 34 (5), 617-619, 2013
462013
Conduction mechanism and improved endurance in HfO2-based RRAM with nitridation treatment
FY Yuan, N Deng, CC Shih, YT Tseng, TC Chang, KC Chang, MH Wang, ...
Nanoscale research letters 12 (1), 1-6, 2017
442017
Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory
YT Tseng, TM Tsai, TC Chang, CC Shih, KC Chang, R Zhang, KH Chen, ...
Applied Physics Letters 106 (21), 213505, 2015
442015
Endurance Improvement Technology With Nitrogen Implanted in the Interface of Resistance Switching Device
YE Syu, R Zhang, TC Chang, TM Tsai, KC Chang, JC Lou, TF Young, ...
IEEE electron device letters 34 (7), 864-866, 2013
442013
Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process
KC Chang, TM Tsai, R Zhang, TC Chang, KH Chen, JH Chen, TF Young, ...
Applied Physics Letters 103 (8), 083509, 2013
432013
Resistive switching modification by ultraviolet illumination in transparent electrode resistive random access memory
CC Shih, KC Chang, TC Chang, TM Tsai, R Zhang, JH Chen, KH Chen, ...
IEEE electron device letters 35 (6), 633-635, 2014
422014
Galvanic effect of Au–Ag electrodes for conductive bridging resistive switching memory
CC Kuo, IC Chen, CC Shih, KC Chang, CH Huang, PH Chen, TC Chang, ...
IEEE Electron Device Letters 36 (12), 1321-1324, 2015
332015
The demonstration of increased selectivity during experimental measurement in filament-type vanadium oxide-based selector
CK Chen, CY Lin, PH Chen, TC Chang, CC Shih, YT Tseng, HX Zheng, ...
IEEE Transactions on Electron Devices 65 (10), 4622-4627, 2018
242018
Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory
YT Tseng, IC Chen, TC Chang, JC Huang, CC Shih, HX Zheng, WC Chen, ...
Applied Physics Letters 113 (5), 053501, 2018
242018
Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory
TJ Chu, TM Tsai, TC Chang, KC Chang, CH Pan, KH Chen, JH Chen, ...
Applied Physics Letters 105 (22), 223514, 2014
242014
Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor
H Chen, TC Chang, TF Young, TM Tsai, KC Chang, R Zhang, SY Huang, ...
Applied Physics Letters 104 (24), 243508, 2014
242014
Role of H2O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors
YC Chien, TC Chang, HC Chiang, HM Chen, YC Tsao, CC Shih, ...
IEEE Electron Device Letters 38 (4), 469-472, 2017
222017
Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications
PH Chen, TC Chang, KC Chang, TM Tsai, CH Pan, CC Shih, CH Wu, ...
Applied Surface Science 414, 224-229, 2017
212017
Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High‐k Spacer Structure
YT Tseng, PH Chen, TC Chang, KC Chang, TM Tsai, CC Shih, HC Huang, ...
Advanced Electronic Materials 3 (9), 1700171, 2017
192017
High performance of graphene oxide-doped silicon oxide-based resistance random access memory
R Zhang, KC Chang, TC Chang, TM Tsai, KH Chen, JC Lou, JH Chen, ...
Nanoscale Research Letters 8 (1), 1-6, 2013
192013
Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
KH Chen, R Zhang, TC Chang, TM Tsai, KC Chang, JC Lou, TF Young, ...
Applied Physics Letters 102 (13), 133503, 2013
192013
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