Следене
Chih-Cheng Shih
Chih-Cheng Shih
國立中山大學材料與光電科學研究所 博士
Потвърден имейл адрес: student.nsysu.edu.tw
Заглавие
Позовавания
Позовавания
Година
Physical and chemical mechanisms in oxide-based resistance random access memory
KC Chang, TC Chang, TM Tsai, R Zhang, YC Hung, YE Syu, YF Chang, ...
Nanoscale research letters 10, 1-27, 2015
1552015
Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment
FY Yuan, N Deng, CC Shih, YT Tseng, TC Chang, KC Chang, MH Wang, ...
Nanoscale research letters 12, 1-6, 2017
642017
Origin of hopping conduction in graphene-oxide-doped silicon oxide resistance random access memory devices
KC Chang, R Zhang, TC Chang, TM Tsai, JC Lou, JH Chen, TF Young, ...
IEEE electron device letters 34 (5), 677-679, 2013
602013
Endurance Improvement Technology With Nitrogen Implanted in the Interface of Resistance Switching Device
YE Syu, R Zhang, TC Chang, TM Tsai, KC Chang, JC Lou, TF Young, ...
IEEE electron device letters 34 (7), 864-866, 2013
532013
Characteristics of hafnium oxide resistance random access memory with different setting compliance current
YT Su, KC Chang, TC Chang, TM Tsai, R Zhang, JC Lou, JH Chen, ...
Applied Physics Letters 103 (16), 2013
522013
Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory
YT Tseng, TM Tsai, TC Chang, CC Shih, KC Chang, R Zhang, KH Chen, ...
Applied Physics Letters 106 (21), 2015
482015
Resistive switching modification by ultraviolet illumination in transparent electrode resistive random access memory
CC Shih, KC Chang, TC Chang, TM Tsai, R Zhang, JH Chen, KH Chen, ...
IEEE electron device letters 35 (6), 633-635, 2014
482014
Performance and characteristics of double layer porous silicon oxide resistance random access memory
TM Tsai, KC Chang, R Zhang, TC Chang, JC Lou, JH Chen, TF Young, ...
Applied Physics Letters 102 (25), 2013
462013
Electrical conduction mechanism of Zn: SiOx resistance random access memory with supercritical CO2 fluid process
KC Chang, TM Tsai, R Zhang, TC Chang, KH Chen, JH Chen, TF Young, ...
Applied Physics Letters 103 (8), 2013
442013
Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment
KC Chang, CH Pan, TC Chang, TM Tsai, R Zhang, JC Lou, TF Young, ...
IEEE electron device letters 34 (5), 617-619, 2013
442013
Galvanic effect of Au–Ag electrodes for conductive bridging resistive switching memory
CC Kuo, IC Chen, CC Shih, KC Chang, CH Huang, PH Chen, TC Chang, ...
IEEE Electron Device Letters 36 (12), 1321-1324, 2015
372015
The demonstration of increased selectivity during experimental measurement in filament-type vanadium oxide-based selector
CK Chen, CY Lin, PH Chen, TC Chang, CC Shih, YT Tseng, HX Zheng, ...
IEEE Transactions on Electron Devices 65 (10), 4622-4627, 2018
302018
Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory
YT Tseng, I Chen, TC Chang, JC Huang, CC Shih, HX Zheng, WC Chen, ...
Applied Physics Letters 113 (5), 2018
302018
Hydrogen diffusion and threshold voltage shifts in top-gate amorphous InGaZnO thin-film transistors
HC Chen, JJ Chen, KJ Zhou, GF Chen, CW Kuo, YS Shih, WC Su, ...
IEEE Transactions on Electron Devices 67 (8), 3123-3128, 2020
282020
Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory
TJ Chu, TM Tsai, TC Chang, KC Chang, CH Pan, KH Chen, JH Chen, ...
Applied Physics Letters 105 (22), 2014
262014
Role of H2O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors
YC Chien, TC Chang, HC Chiang, HM Chen, YC Tsao, CC Shih, ...
IEEE Electron Device Letters 38 (4), 469-472, 2017
242017
Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor
H Chen, TC Chang, TF Young, TM Tsai, KC Chang, R Zhang, SY Huang, ...
Applied Physics Letters 104 (24), 2014
242014
Reducing forming voltage by applying bipolar incremental step pulse programming in a 1T1R structure resistance random access memory
HX Zheng, TC Chang, KH Xue, YT Su, CH Wu, CC Shih, YT Tseng, ...
IEEE Electron Device Letters 39 (6), 815-818, 2018
222018
Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High‐k Spacer Structure
YT Tseng, PH Chen, TC Chang, KC Chang, TM Tsai, CC Shih, HC Huang, ...
Advanced Electronic Materials 3 (9), 1700171, 2017
222017
Hopping conduction distance dependent activation energy characteristics of Zn: SiO2 resistance random access memory devices
KH Chen, R Zhang, TC Chang, TM Tsai, KC Chang, JC Lou, TF Young, ...
Applied Physics Letters 102 (13), 2013
222013
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