Physical and chemical mechanisms in oxide-based resistance random access memory KC Chang, TC Chang, TM Tsai, R Zhang, YC Hung, YE Syu, YF Chang, ...
Nanoscale research letters 10, 1-27, 2015
155 2015 Conduction Mechanism and Improved Endurance in HfO2 -Based RRAM with Nitridation Treatment FY Yuan, N Deng, CC Shih, YT Tseng, TC Chang, KC Chang, MH Wang, ...
Nanoscale research letters 12, 1-6, 2017
64 2017 Origin of hopping conduction in graphene-oxide-doped silicon oxide resistance random access memory devices KC Chang, R Zhang, TC Chang, TM Tsai, JC Lou, JH Chen, TF Young, ...
IEEE electron device letters 34 (5), 677-679, 2013
60 2013 Endurance Improvement Technology With Nitrogen Implanted in the Interface of Resistance Switching Device YE Syu, R Zhang, TC Chang, TM Tsai, KC Chang, JC Lou, TF Young, ...
IEEE electron device letters 34 (7), 864-866, 2013
53 2013 Characteristics of hafnium oxide resistance random access memory with different setting compliance current YT Su, KC Chang, TC Chang, TM Tsai, R Zhang, JC Lou, JH Chen, ...
Applied Physics Letters 103 (16), 2013
52 2013 Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory YT Tseng, TM Tsai, TC Chang, CC Shih, KC Chang, R Zhang, KH Chen, ...
Applied Physics Letters 106 (21), 2015
48 2015 Resistive switching modification by ultraviolet illumination in transparent electrode resistive random access memory CC Shih, KC Chang, TC Chang, TM Tsai, R Zhang, JH Chen, KH Chen, ...
IEEE electron device letters 35 (6), 633-635, 2014
48 2014 Performance and characteristics of double layer porous silicon oxide resistance random access memory TM Tsai, KC Chang, R Zhang, TC Chang, JC Lou, JH Chen, TF Young, ...
Applied Physics Letters 102 (25), 2013
46 2013 Electrical conduction mechanism of Zn: SiOx resistance random access memory with supercritical CO2 fluid process KC Chang, TM Tsai, R Zhang, TC Chang, KH Chen, JH Chen, TF Young, ...
Applied Physics Letters 103 (8), 2013
44 2013 Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment KC Chang, CH Pan, TC Chang, TM Tsai, R Zhang, JC Lou, TF Young, ...
IEEE electron device letters 34 (5), 617-619, 2013
44 2013 Galvanic effect of Au–Ag electrodes for conductive bridging resistive switching memory CC Kuo, IC Chen, CC Shih, KC Chang, CH Huang, PH Chen, TC Chang, ...
IEEE Electron Device Letters 36 (12), 1321-1324, 2015
37 2015 The demonstration of increased selectivity during experimental measurement in filament-type vanadium oxide-based selector CK Chen, CY Lin, PH Chen, TC Chang, CC Shih, YT Tseng, HX Zheng, ...
IEEE Transactions on Electron Devices 65 (10), 4622-4627, 2018
30 2018 Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory YT Tseng, I Chen, TC Chang, JC Huang, CC Shih, HX Zheng, WC Chen, ...
Applied Physics Letters 113 (5), 2018
30 2018 Hydrogen diffusion and threshold voltage shifts in top-gate amorphous InGaZnO thin-film transistors HC Chen, JJ Chen, KJ Zhou, GF Chen, CW Kuo, YS Shih, WC Su, ...
IEEE Transactions on Electron Devices 67 (8), 3123-3128, 2020
28 2020 Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory TJ Chu, TM Tsai, TC Chang, KC Chang, CH Pan, KH Chen, JH Chen, ...
Applied Physics Letters 105 (22), 2014
26 2014 Role of H2 O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors YC Chien, TC Chang, HC Chiang, HM Chen, YC Tsao, CC Shih, ...
IEEE Electron Device Letters 38 (4), 469-472, 2017
24 2017 Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor H Chen, TC Chang, TF Young, TM Tsai, KC Chang, R Zhang, SY Huang, ...
Applied Physics Letters 104 (24), 2014
24 2014 Reducing forming voltage by applying bipolar incremental step pulse programming in a 1T1R structure resistance random access memory HX Zheng, TC Chang, KH Xue, YT Su, CH Wu, CC Shih, YT Tseng, ...
IEEE Electron Device Letters 39 (6), 815-818, 2018
22 2018 Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High‐k Spacer Structure YT Tseng, PH Chen, TC Chang, KC Chang, TM Tsai, CC Shih, HC Huang, ...
Advanced Electronic Materials 3 (9), 1700171, 2017
22 2017 Hopping conduction distance dependent activation energy characteristics of Zn: SiO2 resistance random access memory devices KH Chen, R Zhang, TC Chang, TM Tsai, KC Chang, JC Lou, TF Young, ...
Applied Physics Letters 102 (13), 2013
22 2013