Следене
Nicholas LiCausi
Nicholas LiCausi
PsiQuantum, GLOBALFOUNDRIES, Rensselaer Polytechnic Institute
Потвърден имейл адрес: psiquantum.com
Заглавие
Позовавания
Позовавания
Година
Forming a diffusion break during a RMG process
D Pham, Z Hu, A Wei, NV LiCausi
US Patent 8,846,491, 2014
832014
Methods of forming FinFET devices with alternative channel materials
WP Maszara, AP Jacob, NV LiCausi, JA Fronheiser, K Akarvardar
US Patent 8,673,718, 2014
682014
Self-powered micro-structured solid state neutron detector with very low leakage current and high efficiency
R Dahal, KC Huang, J Clinton, N LiCausi, JQ Lu, Y Danon, I Bhat
Applied Physics Letters 100 (24), 2012
602012
Methods of forming SRAM devices using sidewall image transfer techniques
NV LiCausi
US Patent 8,669,186, 2014
562014
Methods for fabricating integrated circuits having confined epitaxial growth regions
N LiCausi, J Fronheiser, ET Ryan
US Patent 8,815,685, 2014
492014
FINFET fin height control
NV LiCausi
US Patent 9,530,654, 2016
472016
Fully aligned via integration for extendibility of interconnects to beyond the 7 nm node
BD Briggs, CB Peethala, DL Rath, J Lee, S Nguyen, NV LiCausi, ...
2017 IEEE International Electron Devices Meeting (IEDM), 14.2. 1-14.2. 4, 2017
382017
Methods of forming substantially self-aligned isolation regions on FinFET semiconductor devices and the resulting devices
R Xie, VK Kamineni, AF Bello, NV LiCausi, W Wang, M Wedlake, ...
US Patent 9,093,302, 2015
382015
Self aligned buried power rail
NV LiCausi, G Bouche, LW Liebmann
US Patent 10,475,692, 2019
362019
Methods of patterning features in a structure using multiple sidewall image transfer technique
NV LiCausi
US Patent 8,557,675, 2013
332013
Methods of epitaxial FinFET
N LiCausi, W Jeremy
US Patent 8,481,410, 2013
332013
A novel solid state self-powered neutron detector
N LiCausi, J Dingley, Y Danon, JQ Lu, IB Bhat
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics X 7079, 65-76, 2008
312008
Method for manufacturing fully aligned via structures having relaxed gapfills
NV LiCausi, ET Ryan
US Patent 10,177,028, 2019
302019
Biaxial CdTe/CaF2 films growth on amorphous surface
W Yuan, F Tang, HF Li, T Parker, N LiCausi, TM Lu, I Bhat, GC Wang, ...
Thin Solid Films 517 (24), 6623-6628, 2009
262009
Boron filling of high aspect ratio holes by chemical vapor deposition for solid-state neutron detector applications
KC Huang, R Dahal, N LiCausi, JJQ Lu, Y Danon, IB Bhat
Journal of Vacuum Science & Technology B 30 (5), 2012
232012
Methods of forming an air gap adjacent a gate of a transistor and a gate contact above the active region of the transistor
R Xie, L Liebmann, N Cave, A Labonte, N LiCausi, G Bouche, C Park
US Patent 10,211,100, 2019
222019
Methods of FinFET height control
N LiCausi, W Jeremy
US Patent 8,476,137, 2013
222013
An evaluation of Fuchs-Sondheimer and Mayadas-Shatzkes models below 14nm node wide lines
RS Smith, ET Ryan, CK Hu, K Motoyama, N Lanzillo, D Metzler, L Jiang, ...
AIP Advances 9 (2), 2019
212019
Towards high efficiency solid-state thermal and fast neutron detectors
Y Danon, J Clinton, KC Huang, N LiCausi, R Dahal, JJQ Lu, I Bhat
Journal of Instrumentation 7 (03), C03014, 2012
212012
Methods of forming FinFET devices with alternative channel materials
WP Maszara, AP Jacob, NV LiCausi, JA Fronheiser, K Akarvardar
US Patent 8,580,642, 2013
192013
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