Следене
Golnaz Karbasian
Заглавие
Позовавания
Позовавания
Година
Enhanced ferroelectricity in ultrathin films grown directly on silicon
SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu, J Xiao, H Zhang, ...
Nature 580 (7804), 478-482, 2020
5992020
Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery
K Chatterjee, S Kim, G Karbasian, AJ Tan, AK Yadav, AI Khan, C Hu, ...
IEEE Electron Device Letters 38 (10), 1379-1382, 2017
932017
Quaternary Barrier InAlGaN HEMTs With of 230/300 GHz
R Wang, G Li, G Karbasian, J Guo, B Song, Y Yue, Z Hu, O Laboutin, ...
IEEE electron device letters 34 (3), 378-380, 2013
792013
Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2
G Karbasian, R dos Reis, AK Yadav, AJ Tan, C Hu, S Salahuddin
applied physics letters 111 (2), 022907, 2017
682017
InGaN channel high-electron-mobility transistors with InAlGaN barrier and fT/fmax of 260/220 GHz
R Wang, G Li, G Karbasian, J Guo, F Faria, Z Hu, Y Yue, J Verma, ...
Applied Physics Express 6 (1), 016503, 2012
522012
Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation
K Chatterjee, S Kim, G Karbasian, D Kwon, AJ Tan, AK Yadav, CR Serrao, ...
IEEE Electron Device Letters 40 (9), 1423-1426, 2019
332019
Metal-insulator-metal single electron transistors with tunnel barriers prepared by atomic layer deposition
G Karbasian, MS McConnell, H George, LC Schneider, MJ Filmer, ...
Applied Sciences 7 (3), 246, 2017
232017
Ferroelectricity in HfO2 thin films as a function of Zr doping
G Karbasian, A Tan, A Yadav, EMH Sorensen, CR Serrao, AI Khan, ...
2017 International Symposium on VLSI Technology, Systems and Application …, 2017
172017
Partial switching of ferroelectrics for synaptic weight storage
EW Kinder, C Alessandri, P Pandey, G Karbasian, S Salahuddin, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
162017
High aspect ratio features in poly (methylglutarimide) using electron beam lithography and solvent developers
G Karbasian, PJ Fay, HG Xing, D Jena, AO Orlov, GL Snider
Journal of Vacuum Science & Technology B 30 (6), 2012
132012
A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3 Gb/mm2 Bit Density
A Khakifirooz, E Anaya, S Balasubrahmanyam, G Bennett, D Castro, ...
IEEE Solid-State Circuits Letters, 2023
112023
Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
G Karbasian, AO Orlov, AS Mukasyan, GL Snider
2016 Joint International EUROSOI Workshop and International Conference on …, 2016
112016
Atomic layer deposition of Al2O3 for single electron transistors utilizing Pt oxidation and reduction
MS McConnell, LC Schneider, G Karbasian, S Rouvimov, AO Orlov, ...
Journal of Vacuum Science & Technology A 34 (1), 2016
112016
Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
G Karbasian, AO Orlov, GL Snider
Journal of Vacuum Science & Technology B 33 (6), 2015
102015
Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions
G Karbasian, MS McConnell, AO Orlov, S Rouvimov, GL Snider
Journal of Vacuum Science & Technology A 34 (1), 2016
72016
Chemical mechanical planarization of gold
G Karbasian, PJ Fay, H Grace Xing, AO Orlov, GL Snider
Journal of Vacuum Science & Technology A 32 (2), 2014
62014
Single electron transistors with hydrogen treatment of ALD SiO2 in nanoscale metal–insulator–metal tunnel junctions
G Karbasian, MS McConnell, AO Orlov, AN Nazarov, GL Snider
Nanotechnology 28 (21), 215203, 2017
52017
Nanodamascene metal-insulator-metal single electron transistor prepared by atomic layer deposition of tunnel barrier and subsequent reduction of metal surface oxide
G Karbasian, AO Orlov, GL Snider
2015 Silicon Nanoelectronics Workshop (SNW), 1-2, 2015
32015
Tunability Of Dopant Concentration In Thin Hafnium Oxide Films
G Karbasian, KT Wong
US Patent App. 16/434,507, 2019
22019
Fabrication of metallic single electron transistors featuring plasma enhanced atomic layer deposition of tunnel barriers
G Karbasian
University of Notre Dame, 2015
22015
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