Enhanced ferroelectricity in ultrathin films grown directly on silicon SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu, J Xiao, H Zhang, ...
Nature 580 (7804), 478-482, 2020
500 2020 Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8 Zr0.2 O2 , High Endurance and Breakdown Recovery K Chatterjee, S Kim, G Karbasian, AJ Tan, AK Yadav, AI Khan, C Hu, ...
IEEE Electron Device Letters 38 (10), 1379-1382, 2017
87 2017 Quaternary Barrier InAlGaN HEMTs With R Wang, G Li, G Karbasian, J Guo, B Song, Y Yue, Z Hu, O Laboutin, ...
IEEE electron device letters 34 (3), 378-380, 2013
73 2013 Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2 G Karbasian, R dos Reis, AK Yadav, AJ Tan, C Hu, S Salahuddin
applied physics letters 111 (2), 022907, 2017
63 2017 InGaN channel high-electron-mobility transistors with InAlGaN barrier and fT/fmax of 260/220 GHz R Wang, G Li, G Karbasian, J Guo, F Faria, Z Hu, Y Yue, J Verma, ...
Applied Physics Express 6 (1), 016503, 2012
51 2012 Challenges to Partial Switching of Hf0.8 Zr0.2 O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation K Chatterjee, S Kim, G Karbasian, D Kwon, AJ Tan, AK Yadav, CR Serrao, ...
IEEE Electron Device Letters 40 (9), 1423-1426, 2019
32 2019 Metal-insulator-metal single electron transistors with tunnel barriers prepared by atomic layer deposition G Karbasian, MS McConnell, H George, LC Schneider, MJ Filmer, ...
Applied Sciences 7 (3), 246, 2017
22 2017 Ferroelectricity in HfO2 thin films as a function of Zr doping G Karbasian, A Tan, A Yadav, EMH Sorensen, CR Serrao, AI Khan, ...
2017 International Symposium on VLSI Technology, Systems and Application …, 2017
16 2017 Partial switching of ferroelectrics for synaptic weight storage EW Kinder, C Alessandri, P Pandey, G Karbasian, S Salahuddin, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
14 2017 High aspect ratio features in poly (methylglutarimide) using electron beam lithography and solvent developers G Karbasian, PJ Fay, HG Xing, D Jena, AO Orlov, GL Snider
Journal of Vacuum Science & Technology B 30 (6), 2012
13 2012 Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition G Karbasian, AO Orlov, AS Mukasyan, GL Snider
2016 Joint International EUROSOI Workshop and International Conference on …, 2016
11 2016 Atomic layer deposition of Al2O3 for single electron transistors utilizing Pt oxidation and reduction MS McConnell, LC Schneider, G Karbasian, S Rouvimov, AO Orlov, ...
Journal of Vacuum Science & Technology A 34 (1), 2016
11 2016 Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier G Karbasian, AO Orlov, GL Snider
Journal of Vacuum Science & Technology B 33 (6), 2015
9 2015 Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions G Karbasian, MS McConnell, AO Orlov, S Rouvimov, GL Snider
Journal of Vacuum Science & Technology A 34 (1), 2016
7 2016 A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3 Gb/mm2 Bit Density A Khakifirooz, E Anaya, S Balasubrahmanyam, G Bennett, D Castro, ...
IEEE Solid-State Circuits Letters, 2023
5 2023 Single electron transistors with hydrogen treatment of ALD SiO2 in nanoscale metal–insulator–metal tunnel junctions G Karbasian, MS McConnell, AO Orlov, AN Nazarov, GL Snider
Nanotechnology 28 (21), 215203, 2017
5 2017 Chemical mechanical planarization of gold G Karbasian, PJ Fay, H Grace Xing, AO Orlov, GL Snider
Journal of Vacuum Science & Technology A 32 (2), 2014
4 2014 Nanodamascene metal-insulator-metal single electron transistor prepared by atomic layer deposition of tunnel barrier and subsequent reduction of metal surface oxide G Karbasian, AO Orlov, GL Snider
2015 Silicon Nanoelectronics Workshop (SNW), 1-2, 2015
3 2015 Fabrication of metallic single electron transistors featuring plasma enhanced atomic layer deposition of tunnel barriers G Karbasian
University of Notre Dame, 2015
2 2015 Tunability Of Dopant Concentration In Thin Hafnium Oxide Films G Karbasian, KT Wong
US Patent App. 16/434,507, 2019
1 2019 
Gregory SniderProfessor of Electrical EngineeringПотвърден имейл адрес: nd.edu
