Sergio Fernández-Garrido

Получаване на мой собствен потребителски профил

Позовавания

	Всички	От 2019
Позовавания	3749	1463
h-индекс	33	21
i10-индекс	64	44

360

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200620072008200920102011201220132014201520162017201820192020202120222023202427 26 48 72 99 149 176 209 225 286 358 306 292 348 331 230 171 244 138

Публичен достъп

Преглед на всички

48 статии

2 статии

налични

неналични

Въз основа на изисквания при финансирането

Съавтори

Oliver BrandtSenior scientist, Paul-Drude-Institut für FestkörperelektronikПотвърден имейл адрес: pdi-berlin.de
Pierre CorfdirABB Corporate ResearchПотвърден имейл адрес: ch.abb.com
Javier GrandalISOM - UPM (ETSI de Telecomunicación)Потвърден имейл адрес: upm.es
Dr. Christian HauswaldDeutsche Bahn AG - Digitale Schiene DeutschlandПотвърден имейл адрес: deutschebahn.com
Johannes K ZettlerLayTec AGПотвърден имейл адрес: laytec.de
Vladimir KaganerPaul-Drude-Institut für FestkörperelektronikПотвърден имейл адрес: pdi-berlin.de
Holger T. GrahnPaul-Drude-Institut für FestkörperelektronikПотвърден имейл адрес: pdi-berlin.de
M.A. Sanchez-GarciaCatedrático de Universidad, Universidad Politécnica de MadridПотвърден имейл адрес: isom.upm.es
zarko gacevicAssociate professor, Universidad Politécnica de MadridПотвърден имейл адрес: upm.es
Esperanza LunaPaul-Drude-Institute, Berlin, GermanyПотвърден имейл адрес: pdi-berlin.de
Jonas LähnemannWissenschaftlicher Mitarbeiter, Paul-Drude-Institut für FestkörperelektronikПотвърден имейл адрес: pdi-berlin.de
Carsten PfüllerPost Doc, Paul-Drude-InstitutПотвърден имейл адрес: pdi-berlin.de
Henning RiechertDirector, Paul-Drude-Institut für FestkörperelektronikПотвърден имейл адрес: pdi-berlin.de
Thomas AuzellePaul-Drude-Institut für FestkörperelektronikПотвърден имейл адрес: pdi-berlin.de
Laurent CeruttiUniversity of MontpellierПотвърден имейл адрес: umontpellier.fr
Sonia EstradeUniversitat de BarcelonaПотвърден имейл адрес: ub.edu
Raffaella CalarcoCNR-IMMПотвърден имейл адрес: cnr.it
Francesca PeiróUniversitat de BarcelonaПотвърден имейл адрес: ub.edu
sabelfeldИнститут вычислительной математики и математической геофизики СОПотвърден имейл адрес: osmf.sscc.ru
Ana Bengoechea EncaboПотвърден имейл адрес: trsemiconductor.com

Следене

Sergio Fernández-Garrido

Associate Professor in Materials Science and ERC-CoG Grantee at Universidad Politécnica de Madrid

Потвърден имейл адрес: upm.es - Начална страница

Quantum Information Technologies Photovoltaics III-V Compound Semiconductors Nanotechnology


Заглавие Сортиране по цитати Сортиране по година Сортиране по заглавие	Позовавания Позовавания	Година
On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy J Ristić, E Calleja, S Fernández-Garrido, L Cerutti, A Trampert, U Jahn, ... Journal of crystal growth 310 (18), 4035-4045, 2008	229	2008
Growth, morphology, and structural properties of group‐III‐nitride nanocolumns and nanodisks E Calleja, J Ristić, S Fernández‐Garrido, L Cerutti, MA Sánchez‐García, ... physica status solidi (b) 244 (8), 2816-2837, 2007	211	2007
Wurtzite GaN nanocolumns grown on Si (001) by molecular beam epitaxy L Cerutti, J Ristić, S Fernández-Garrido, E Calleja, A Trampert, KH Ploog, ... Applied physics letters 88 (21), 2006	189	2006
Green luminescence in Mg-doped GaN MA Reshchikov, DO Demchenko, JD McNamara, S Fernández-Garrido, ... Physical Review B 90 (3), 035207, 2014	157	2014
A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si (111) S Fernández-Garrido, J Grandal, E Calleja, MA Sánchez-García, ... Journal of Applied Physics 106 (12), 126102, 2009	156	2009
Polarity in GaN and ZnO: Theory, measurement, growth, and devices J Zuniga-Perez, V Consonni, L Lymperakis, X Kong, A Trampert, ... Applied Physics Reviews 3 (4), 2016	145	2016
Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity S Fernández-Garrido, X Kong, T Gotschke, R Calarco, L Geelhaar, ... Nano Letters 12 (12), 6119-6125, 2012	138	2012
In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction S Fernández-Garrido, G Koblmüller, E Calleja, JS Speck Journal of applied physics 104 (3), 2008	133	2008
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy S Fernández-Garrido, VM Kaganer, KK Sabelfeld, T Gotschke, J Grandal, ... Nano Letters 13 (7), 3274-3280, 2013	127	2013
Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks A Bengoechea-Encabo, F Barbagini, S Fernandez-Garrido, J Grandal, ... Journal of Crystal Growth 325 (1), 89-92, 2011	127	2011
In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN G Koblmüller, S Fernández-Garrido, E Calleja, JS Speck Applied Physics Letters 91 (16), 2007	119	2007
Columnar AlGaN/GaN Nanocavities with AlN/GaN Bragg Reflectors Grown by Molecular Beam Epitaxy on Si (111) J Ristić, E Calleja, A Trampert, S Fernández-Garrido, C Rivera, U Jahn, ... Physical review letters 94 (14), 146102, 2005	101	2005
Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil G Calabrese, P Corfdir, G Gao, C Pfüller, A Trampert, O Brandt, ... Applied Physics Letters 108 (20), 2016	92	2016
High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy G Koblmüller, F Wu, T Mates, JS Speck, S Fernández-Garrido, E Calleja Applied Physics Letters 91 (22), 2007	91	2007
Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film M Wolz, C Hauswald, T Flissikowski, T Gotschke, S Fernández-Garrido, ... Nano Letters 15 (6), 3743-3747, 2015	89	2015
Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene S Fernández-Garrido, M Ramsteiner, G Gao, LA Galves, B Sharma, ... Nano Letters 17 (9), 5213-5221, 2017	84	2017
Carrier-confinement effects in nanocolumnar quantum disks grown by molecular-beam epitaxy J Ristić, C Rivera, E Calleja, S Fernández-Garrido, M Povoloskyi, ... Physical Review B—Condensed Matter and Materials Physics 72 (8), 085330, 2005	70	2005
A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy S Fernández-Garrido, Ž Gačević, E Calleja Applied Physics Letters 93 (19), 2008	64	2008
Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles S Fernández-Garrido, JK Zettler, L Geelhaar, O Brandt Nano Letters 15 (3), 1930-1937, 2015	63	2015
Nucleation, Growth, and Bundling of GaN Nanowires in Molecular Beam Epitaxy: Disentangling the Origin of Nanowire Coalescence VM Kaganer, S Fernández-Garrido, P Dogan, KK Sabelfeld, O Brandt Nano Letters 16 (6), 3717-3725, 2016	61	2016

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