Следене
Lukas Czornomaz
Lukas Czornomaz
Lumiphase Corporation
Потвърден имейл адрес: lumiphase.com
Заглавие
Позовавания
Позовавания
Година
Large Pockels effect in micro-and nanostructured barium titanate integrated on silicon
S Abel, F Eltes, JE Ortmann, A Messner, P Castera, T Wagner, D Urbonas, ...
Nature materials 18 (1), 42-47, 2019
3862019
Integrated gallium phosphide nonlinear photonics
DJ Wilson, K Schneider, S Hönl, M Anderson, Y Baumgartner, ...
Nature Photonics 14 (1), 57-62, 2020
2762020
Compound semiconductor structure
S Abel, L Czornomaz, J Fompeyrine, M El Kazzi
US Patent 9,337,265, 2016
1792016
A BaTiO3-Based Electro-Optic Pockels Modulator Monolithically Integrated on an Advanced Silicon Photonics Platform
F Eltes, C Mai, D Caimi, M Kroh, Y Popoff, G Winzer, D Petousi, S Lischke, ...
Journal of Lightwave Technology 37 (5), 1456-1462, 2019
1462019
High-speed III-V nanowire photodetector monolithically integrated on Si
S Mauthe, Y Baumgartner, M Sousa, Q Ding, MD Rossell, A Schenk, ...
Nature communications 11 (1), 4565, 2020
1442020
A hybrid barium titanate–silicon photonics platform for ultraefficient electro-optic tuning
S Abel, T Stöferle, C Marchiori, D Caimi, L Czornomaz, M Stuckelberger, ...
Journal of Lightwave Technology 34 (8), 1688-1693, 2016
1282016
Confined epitaxial lateral overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates
L Czornomaz, E Uccelli, M Sousa, V Deshpande, V Djara, D Caimi, ...
2015 Symposium on VLSI Technology (VLSI Technology), T172-T173, 2015
962015
Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
N Daix, E Uccelli, L Czornomaz, D Caimi, C Rossel, M Sousa, H Siegwart, ...
APL materials 2 (8), 2014
902014
A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon
C Convertino, CB Zota, H Schmid, D Caimi, L Czornomaz, AM Ionescu, ...
nature electronics 4 (2), 162-170, 2021
692021
Electrochemical performance of all-solid-state Li-ion batteries based on garnet electrolyte using silicon as a model electrode
G Ferraresi, M El Kazzi, L Czornomaz, CL Tsai, S Uhlenbruck, ...
ACS energy letters 3 (4), 1006-1012, 2018
672018
CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs
L Czornomaz, M El Kazzi, M Hopstaken, D Caimi, P Mächler, C Rossel, ...
Solid-State Electronics 74, 71-76, 2012
622012
Gallium phosphide-on-silicon dioxide photonic devices
K Schneider, P Welter, Y Baumgartner, H Hahn, L Czornomaz, P Seidler
Journal of Lightwave Technology 36 (14), 2994-3002, 2018
592018
An integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recycling
L Czornomaz, N Daix, D Caimi, M Sousa, R Erni, MD Rossell, M El-Kazzi, ...
2012 International Electron Devices Meeting, 23.4. 1-23.4. 4, 2012
542012
Optomechanics with one-dimensional gallium phosphide photonic crystal cavities
K Schneider, Y Baumgartner, S Hönl, P Welter, H Hahn, DJ Wilson, ...
Optica 6 (5), 577-584, 2019
522019
Elucidating the surface reactions of an amorphous Si thin film as a model electrode for Li-ion batteries
G Ferraresi, L Czornomaz, C Villevieille, P Novák, M El Kazzi
ACS applied materials & interfaces 8 (43), 29791-29798, 2016
512016
Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si (0 0 1)
KJ Kormondy, S Abel, F Fallegger, Y Popoff, P Ponath, AB Posadas, ...
Microelectronic Engineering 147, 215-218, 2015
512015
Co-integration of InGaAs n-and SiGe p-MOSFETs into digital CMOS circuits using hybrid dual-channel ETXOI substrates
L Czornomaz, N Daix, K Cheng, D Caimi, C Rossel, K Lister, M Sousa, ...
2013 IEEE International Electron Devices Meeting, 2.8. 1-2.8. 4, 2013
502013
Ultra-low-power tuning in hybrid barium titanate–silicon nitride electro-optic devices on silicon
JE Ortmann, F Eltes, D Caimi, N Meier, AA Demkov, L Czornomaz, ...
ACS Photonics 6 (11), 2677-2684, 2019
492019
Advanced 3D monolithic hybrid CMOS with sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI fin pFETs
V Deshpande, V Djara, E O'Connor, P Hashemi, K Balakrishnan, M Sousa, ...
2015 IEEE International Electron Devices Meeting (IEDM), 8.8. 1-8.8. 4, 2015
482015
CMOS-Compatible Replacement Metal Gate InGaAs-OI FinFET WithatV andnA/
V Djara, V Deshpande, M Sousa, D Caimi, L Czornomaz, J Fompeyrine
IEEE Electron Device Letters 37 (2), 169-172, 2016
462016
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