Rethinking phonons: The issue of disorder HR Seyf, L Yates, TL Bougher, S Graham, BA Cola, T Detchprohm, MH Ji, ...
npj Computational Materials 3 (1), 49, 2017
108 2017 Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers S Choi, MH Ji, J Kim, H Jin Kim, MM Satter, PD Yoder, JH Ryou, ...
Applied Physics Letters 101 (16), 2012
97 2012 Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions J Kim, Z Lochner, MH Ji, S Choi, HJ Kim, JS Kim, RD Dupuis, AM Fischer, ...
Journal of Crystal Growth 388, 143-149, 2014
65 2014 Demonstration of Large-Size Vertical Ga2 O3 Schottky Barrier Diodes M Ji, NR Taylor, I Kravchenko, P Joshi, T Aytug, LR Cao, ...
IEEE Transactions on Power Electronics 36 (1), 41-44, 2020
60 2020 Thermal characterization of gallium nitride pin diodes J Dallas, G Pavlidis, B Chatterjee, JS Lundh, M Ji, J Kim, T Kao, ...
Applied Physics Letters 112 (7), 2018
60 2018 Alx 1−x N Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than J Kim, MH Ji, T Detchprohm, JH Ryou, RD Dupuis, AK Sood, NK Dhar
IEEE Photonics Technology Letters 27 (6), 642-645, 2015
43 2015 Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays MH Ji, J Kim, T Detchprohm, RD Dupuis, AK Sood, NK Dhar, J Lewis
IEEE Photonics Technology Letters 28 (19), 2015-2018, 2016
35 2016 Comparison of AlGaN p–i–n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates J Kim, MH Ji, T Detchprohm, RD Dupuis, JH Ryou, AK Sood, ND Dhar, ...
Applied Physics Express 8 (12), 122202, 2015
31 2015 GaN/InGaN avalanche phototransistors SC Shen, TT Kao, HJ Kim, YC Lee, J Kim, MH Ji, JH Ryou, T Detchprohm, ...
Applied Physics Express 8 (3), 032101, 2015
26 2015 Temperature-dependent characteristics of GaN homojunction rectifiers TT Kao, J Kim, YC Lee, AFMS Haq, MH Ji, T Detchprohm, RD Dupuis, ...
IEEE Transactions on Electron Devices 62 (8), 2679-2683, 2015
23 2015 Temperature-dependent leakage current characteristics of homojunction GaN pin rectifiers using ion-implantation isolation CW Tsou, MH Ji, M Bakhtiary-Noodeh, T Detchprohm, RD Dupuis, ...
IEEE Transactions on Electron Devices 66 (10), 4273-4278, 2019
22 2019 Pipin separate absorption and multiplication ultraviolet avalanche photodiodes MH Ji, J Kim, T Detchprohm, Y Zhu, SC Shen, RD Dupuis
IEEE Photonics Technology Letters 30 (2), 181-184, 2017
22 2017 Development of high gain GaN/AlGaN avalanche photodiode arrays for UV detection and imaging applications AK Sood, JW Zeller, YR Puri, RD Dupuis, T Detchprohm, MH Ji, SC Shen, ...
Int. J. Engr. Res. Tech 10 (2), 129-150, 2017
17 2017 Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production D Key, E Letts, CW Tsou, MH Ji, M Bakhtiary-Noodeh, T Detchprohm, ...
Materials 12 (12), 1925, 2019
15 2019 III-N high-power bipolar transistors RD Dupuis, J Kim, YC Lee, Z Lochner, MH Ji, TT Kao, JH Ryou, ...
ECS Transactions 58 (4), 261, 2013
15 2013 Large area vertical Ga2O3 Schottky diodes for X-ray detection NR Taylor, M Ji, L Pan, P Kandlakunta, I Kravchenko, P Joshi, T Aytug, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2021
13 2021 Homojunction GaN pin rectifiers with ultra-low on-state resistance TT Kao, J Kim, YC Lee, MH Ji, T Detchprohm, RD Dupuis, SC Shen
Proc. CS MANTECH Int. Conf. Compound Semicond. Manuf. Technol, 157-160, 2014
13 2014 Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation J Kim, MH Ji, D Yuan, R Guo, J Liu, M Asadirad, T Detchprohm, MK Kwon, ...
Applied Physics Letters 104 (14), 2014
13 2014 Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts NR Taylor, Y Yu, M Ji, T Aytug, S Mahurin, R Mayes, S Cetiner, ...
Applied Physics Letters 116 (25), 2020
12 2020 Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor deposition J Kim, MH Ji, T Detchprohm, RD Dupuis, AM Fischer, FA Ponce, JH Ryou
Journal of Applied Physics 118 (12), 2015
11 2015 