Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess Y Shi, S Huang, Q Bao, X Wang, K Wei, H Jiang, J Li, C Zhao, S Li, ...
IEEE Transactions on Electron Devices 63 (2), 614-619, 2016
95 2016 High uniformity normally-OFF GaN MIS-HEMTs fabricated on ultra-thin-barrier AlGaN/GaN heterostructure S Huang, X Liu, X Wang, X Kang, J Zhang, Q Bao, K Wei, Y Zheng, ...
IEEE Electron Device Letters 37 (12), 1617-1620, 2016
81 2016 Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing J Zhang, S Huang, Q Bao, X Wang, K Wei, Y Zheng, Y Li, C Zhao, X Liu, ...
Applied Physics Letters 107 (26), 2015
61 2015 Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs Z Liu, S Huang, Q Bao, X Wang, K Wei, H Jiang, H Cui, J Li, C Zhao, X Liu, ...
Journal of Vacuum Science & Technology B 34 (4), 2016
44 2016 Dependence of Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET M Hua, J Wei, Q Bao, Z Zhang, Z Zheng, KJ Chen
IEEE Electron Device Letters 39 (3), 413-416, 2018
40 2018 Effect of hydrogen carrier gas on AlN and AlGaN growth in AMEC Prismo D-Blue® MOCVD platform Q Bao, T Zhu, N Zhou, S Guo, J Luo, C Zhao
Journal of Crystal Growth 419, 52-56, 2015
33 2015 Mechanism of TMAl pre-seeding in AlN epitaxy on Si (111) substrate Q Bao, J Luo, C Zhao
Vacuum 101, 184-188, 2014
29 2014 Reverse-bias stability and reliability of hole-barrier-free E-mode LPCVD-SiNx /GaN MIS-FETs M Hua, J Wei, Q Bao, J He, Z Zhang, Z Zheng, J Lei, KJ Chen
2017 IEEE International Electron Devices Meeting (IEDM), 33.2. 1-33.2. 4, 2017
28 2017 Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure Q Bao, S Huang, X Wang, K Wei, Y Zheng, Y Li, C Yang, H Jiang, J Li, ...
Semiconductor Science and Technology 31 (6), 065014, 2016
25 2016 Hole-induced threshold voltage shift under reverse-bias stress in E-mode GaN MIS-FET M Hua, J Wei, Q Bao, Z Zheng, Z Zhang, J He, KJ Chen
IEEE Transactions on Electron Devices 65 (9), 3831-3838, 2018
21 2018 High-performance fully-recessed enhancement-mode GaN MIS-FETs with crystalline oxide interlayer M Hua, Z Zhang, Q Qian, J Wei, Q Bao, G Tang, KJ Chen
2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017
9 2017 Effect of alloying temperature on the capacitance–voltage and current–voltage characteristics of low‐pressure chemical vapor deposition SiNx /n‐GaN MIS structures X Ma, Y Liu, X Wang, S Huang, Z Gao, Q Bao, X Liu
physica status solidi (a) 212 (12), 2928-2935, 2015
8 2015 GaN-based power electronic device and method for manufacturing the same S Huang, X Liu, XH Wang, K Wei, BAO Qilong, W Wang, C Zhao
US Patent 10,062,775, 2018
4 2018 Evolution of traps in TiN/O3-sourced Al2O3/GaN gate structures with thermal annealing temperature X Liu, S Huang, Q Bao, X Wang, K Wei, Y Li, J Xiang, C Zhao, X Yang, ...
Journal of Vacuum Science & Technology B 36 (2), 2018
3 2018 Device physics towards high performance GaN-based power electronics K Wei, S Yang, J Chen, Z Tang, X Liu, S Huang, X Wang, Q Bao, M Hua
Scientia Sinica Physica, Mechanica & Astronomica 46 (10), 107307, 2016
3 2016 Integrated device, semiconductor device, and integrated device manufacturing method T Gaofei, BAO Qilong, W Hanxing, Q Jiang, D Ouyang
US Patent App. 18/533,315, 2024
2024 Field effect transistor, preparation method thereof, and switch circuit BAO Qilong, Q Jiang, T Gaofei, W Hanxing, G Curatola
US Patent App. 18/463,417, 2023
2023 Gallium Nitride Power Transistor G Curatola, BAO Qilong, Q Jiang, T Gaofei, W Hanxing
US Patent App. 18/460,216, 2023
2023 Gallium Nitride Device, Switching Power Transistor, Drive Circuit, and Gallium Nitride Device Production Method BAO Qilong, Q Jiang, T Gaofei, W Hanxing, B Huang, Z Hou
US Patent App. 17/727,221, 2022
2022 Effective Cross-Plane Thermal Conductivity of GaN-on-Si (111) Epi-layers Evaluated by 3-Omega Technique Q Bao, Z Zhang, Q Qian, J Lei, G Tang, B Huang, KJ Chen
2017