Mie resonances, infrared emission, and the band gap of InN TV Shubina, SV Ivanov, VN Jmerik, DD Solnyshkov, VA Vekshin, ...
Physical Review Letters 92 (11), 117407, 2004
288 2004 High‐output‐power ultraviolet light source from quasi‐2D GaN quantum structure X Rong, X Wang, SV Ivanov, X Jiang, G Chen, P Wang, W Wang, C He, ...
Advanced Materials 28 (36), 7978-7983, 2016
83 2016 Plasma-assisted MBE growth and characterization of InN on sapphire SV Ivanov, TV Shubina, VN Jmerik, VA Vekshin, PS Kop’ev, B Monemar
Journal of crystal growth 269 (1), 1-9, 2004
81 2004 Metastable nature of InN and In-rich InGaN alloys SV Ivanov, TV Shubina, TA Komissarova, VN Jmerik
Journal of crystal growth 403, 83-89, 2014
76 2014 Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire VN Jmerik, AM Mizerov, AA Sitnikova, PS Kop’ev, SV Ivanov, EV Lutsenko, ...
Applied Physics Letters 96 (14), 2010
75 2010 Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE DV Nechaev, PA Aseev, VN Jmerik, PN Brunkov, YV Kuznetsova, ...
Journal of crystal growth 378, 319-322, 2013
73 2013 Plasma‐assisted molecular beam epitaxy of AlGaN heterostructures for deep‐ultraviolet optically pumped lasers VN Jmerik, EV Lutsenko, SV Ivanov
physica status solidi (a) 210 (3), 439-450, 2013
71 2013 Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes Y Robin, SY Bae, TV Shubina, M Pristovsek, EA Evropeitsev, DA Kirilenko, ...
Scientific reports 8 (1), 7311, 2018
66 2018 Deep ultraviolet light source from ultrathin GaN/AlN MQW structures with output power over 2 watt Y Wang, X Rong, S Ivanov, V Jmerik, Z Chen, H Wang, T Wang, P Wang, ...
Advanced Optical Materials 7 (10), 1801763, 2019
65 2019 Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring VN Jmerik, AM Mizerov, DV Nechaev, PA Aseev, AA Sitnikova, ...
Journal of crystal growth 354 (1), 188-192, 2012
62 2012 Plasma-assisted molecular beam epitaxy of Al (Ga) N layers and quantum well structures for optically pumped mid-UV lasers on c-Al2O3 SV Ivanov, DV Nechaev, AA Sitnikova, VV Ratnikov, MA Yagovkina, ...
Semiconductor Science and Technology 29 (8), 084008, 2014
55 2014 Optically Enhanced Emission of Localized Excitons in AA Toropov, TV Shubina, VN Jmerik, SV Ivanov, Y Ogawa, F Minami
Physical review letters 103 (3), 037403, 2009
48 2009 AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique VN Jmerik, TV Shubina, AM Mizerov, KG Belyaev, AV Sakharov, ...
Journal of crystal growth 311 (7), 2080-2083, 2009
47 2009 High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on c-Al2O3 VN Jmerik, DV Nechaev, AA Toropov, EA Evropeitsev, VI Kozlovsky, ...
Applied Physics Express 11 (9), 091003, 2018
38 2018 E‐beam pumped mid‐UV sources based on MBE‐grown AlGaN MQW SV Ivanov, VN Jmerik, DV Nechaev, VI Kozlovsky, MD Tiberi
physica status solidi (a) 212 (5), 1011-1016, 2015
37 2015 Solar-blind UV photocathodes based on AlGaN heterostructures with a 300-to 330-nm spectral sensitivity threshold MR Ainbund, AN Alekseev, OV Alymov, VN Jmerik, LV Lapushkina, ...
Technical Physics Letters 38, 439-442, 2012
36 2012 Optical properties of InN with stoichoimetry violation and indium clustering TV Shubina, SV Ivanov, VN Jmerik, MM Glazov, AP Kalvarskii, ...
physica status solidi (a) 202 (3), 377-382, 2005
36 2005 High resolution transmission electron microscopy of InN TP Bartel, C Kisielowski, P Specht, TV Shubina, VN Jmerik, SV Ivanov
Applied Physics Letters 91 (10), 2007
31 2007 InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500–650 nm range SV Ivanov, VN Jmerik, TV Shubina, SB Listoshin, AM Mizerov, ...
Journal of crystal growth 301, 465-468, 2007
31 2007 Strongly confined excitons in GaN/AlN nanostructures with atomically thin GaN layers for efficient light emission in deep-ultraviolet AA Toropov, EA Evropeitsev, MO Nestoklon, DS Smirnov, TV Shubina, ...
Nano Letters 20 (1), 158-165, 2019
30 2019 
Sergey IvanovDirector, Ioffe InstituteПотвърден имейл адрес: beam.ioffe.ru
