| Mie resonances, infrared emission, and the band gap of InN TV Shubina, SV Ivanov, VN Jmerik, DD Solnyshkov, VA Vekshin, ... Physical review letters 92 (11), 117407, 2004 | 286 | 2004 |
| Plasma-assisted MBE growth and characterization of InN on sapphire SV Ivanov, TV Shubina, VN Jmerik, VA Vekshin, PS Kop’ev, B Monemar Journal of crystal growth 269 (1), 1-9, 2004 | 79 | 2004 |
| Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire VN Jmerik, AM Mizerov, AA Sitnikova, PS Kop’ev, SV Ivanov, EV Lutsenko, ... Applied Physics Letters 96 (14), 2010 | 74 | 2010 |
| High‐output‐power ultraviolet light source from quasi‐2D GaN quantum structure X Rong, X Wang, SV Ivanov, X Jiang, G Chen, P Wang, W Wang, C He, ... Advanced Materials 28 (36), 7978-7983, 2016 | 71 | 2016 |
| Plasma‐assisted molecular beam epitaxy of AlGaN heterostructures for deep‐ultraviolet optically pumped lasers VN Jmerik, EV Lutsenko, SV Ivanov physica status solidi (a) 210 (3), 439-450, 2013 | 70 | 2013 |
| Metastable nature of InN and In-rich InGaN alloys SV Ivanov, TV Shubina, TA Komissarova, VN Jmerik Journal of crystal growth 403, 83-89, 2014 | 68 | 2014 |
| Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE DV Nechaev, PA Aseev, VN Jmerik, PN Brunkov, YV Kuznetsova, ... Journal of crystal growth 378, 319-322, 2013 | 67 | 2013 |
| Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring VN Jmerik, AM Mizerov, DV Nechaev, PA Aseev, AA Sitnikova, ... Journal of crystal growth 354 (1), 188-192, 2012 | 60 | 2012 |
| Deep ultraviolet light source from ultrathin GaN/AlN MQW structures with output power over 2 watt Y Wang, X Rong, S Ivanov, V Jmerik, Z Chen, H Wang, T Wang, P Wang, ... Advanced Optical Materials 7 (10), 1801763, 2019 | 55 | 2019 |
| Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes Y Robin, SY Bae, TV Shubina, M Pristovsek, EA Evropeitsev, DA Kirilenko, ... Scientific reports 8 (1), 7311, 2018 | 55 | 2018 |
| Plasma-assisted molecular beam epitaxy of Al (Ga) N layers and quantum well structures for optically pumped mid-UV lasers on c-Al2O3 SV Ivanov, DV Nechaev, AA Sitnikova, VV Ratnikov, MA Yagovkina, ... Semiconductor Science and Technology 29 (8), 084008, 2014 | 53 | 2014 |
| Optically enhanced emission of localized excitons in In x Ga 1− x N films by coupling to plasmons in a gold nanoparticle AA Toropov, TV Shubina, VN Jmerik, SV Ivanov, Y Ogawa, F Minami Physical review letters 103 (3), 037403, 2009 | 48 | 2009 |
| AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique VN Jmerik, TV Shubina, AM Mizerov, KG Belyaev, AV Sakharov, ... Journal of crystal growth 311 (7), 2080-2083, 2009 | 43 | 2009 |
| Optical properties of InN with stoichoimetry violation and indium clustering TV Shubina, SV Ivanov, VN Jmerik, MM Glazov, AP Kalvarskii, ... physica status solidi (a) 202 (3), 377-382, 2005 | 36 | 2005 |
| E‐beam pumped mid‐UV sources based on MBE‐grown AlGaN MQW SV Ivanov, VN Jmerik, DV Nechaev, VI Kozlovsky, MD Tiberi physica status solidi (a) 212 (5), 1011-1016, 2015 | 35 | 2015 |
| High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on c-Al2O3 VN Jmerik, DV Nechaev, AA Toropov, EA Evropeitsev, VI Kozlovsky, ... Applied Physics Express 11 (9), 091003, 2018 | 34 | 2018 |
| Solar-blind UV photocathodes based on AlGaN heterostructures with a 300-to 330-nm spectral sensitivity threshold MR Ainbund, AN Alekseev, OV Alymov, VN Jmerik, LV Lapushkina, ... Technical Physics Letters 38, 439-442, 2012 | 33 | 2012 |
| High resolution transmission electron microscopy of InN TP Bartel, C Kisielowski, P Specht, TV Shubina, VN Jmerik, SV Ivanov Applied Physics Letters 91 (10), 2007 | 31 | 2007 |
| InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500–650 nm range SV Ivanov, VN Jmerik, TV Shubina, SB Listoshin, AM Mizerov, ... Journal of crystal growth 301, 465-468, 2007 | 30 | 2007 |
| Plasmon-induced Purcell effect in InN/In metal-semiconductor nanocomposites TV Shubina, AA Toropov, VN Jmerik, DI Kuritsyn, LV Gavrilenko, ... Physical Review B 82 (7), 073304, 2010 | 27 | 2010 |
Sergey IvanovDirector, Ioffe InstituteПотвърден имейл адрес: beam.ioffe.ru
